WIDE BAND HIGH POWER RF & Microwave Amplifiers 475

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ADPA1107ACPZN-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN	1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm		85 Cel	27 dB	-40 Cel				4800 MHz	6000 MHz
ADCA5191ACPZ-R7	Analog Devices	WIDE BAND HIGH POWER
ADCA5191ACPZ	Analog Devices	WIDE BAND HIGH POWER
ADCA5190ACPZ	Analog Devices	WIDE BAND HIGH POWER
ADCA5190ACPZ-R7	Analog Devices	WIDE BAND HIGH POWER
HMC7885	Analog Devices	WIDE BAND HIGH POWER						36 dBm	2		MODULE			50 ohm		60 Cel	21 dB	-30 Cel				2000 MHz	6000 MHz
HMC8500LP5DETR	Analog Devices	WIDE BAND HIGH POWER
HMC626ALP5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	10.5 dBm		225 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm		85 Cel	30 dB	-40 Cel	MATTE TIN		e3	0 MHz	10000 MHz
ADL5523ACPZ-WP	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1				COMPONENT	5	SOLCC8,.11,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	400 MHz	4000 MHz
HMC8415LP6GE	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm		85 Cel	25.5 dB	-40 Cel	MATTE TIN		e3	9000 MHz	10500 MHz
HMC1086	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10		GAN	1	33 dBm	6		COMPONENT	28	DIE OR CHIP	50 ohm		85 Cel	23 dB	-40 Cel				2000 MHz	6000 MHz
HMC1099LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC995LP5GE	Analog Devices	WIDE BAND HIGH POWER						24 dBm			COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	MATTE TIN		e3	12000 MHz	16000 MHz
HMC1099LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC7149	Analog Devices	WIDE BAND HIGH POWER						30 dBm	6		COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel				6000 MHz	18000 MHz
HMC7327F10A	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	GAN	1	34 dBm			COMPONENT	3.2	FL10(UNSPEC)	50 ohm		85 Cel	26 dB	-40 Cel				2700 MHz	3200 MHz
HMC591	Analog Devices	WIDE BAND HIGH POWER						15 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-55 Cel				6000 MHz	10000 MHz
HMC8415LP6GETR	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm		85 Cel	25.5 dB	-40 Cel	MATTE TIN		e3	9000 MHz	10500 MHz
HMC950	Analog Devices	WIDE BAND HIGH POWER						27 dBm			COMPONENT			50 ohm		85 Cel	26 dB	-55 Cel	Gold (Au)		e4	12000 MHz	16000 MHz
HMC7748	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	8 dBm	6	4000 mA	COMPONENT	12,28	MODULE,6LEAD,2.9	50 ohm		70 Cel	58 dB	-40 Cel				2000 MHz	6000 MHz
HMC1086F10	Analog Devices	WIDE BAND HIGH POWER						33 dBm	6		COMPONENT			50 ohm		85 Cel	21 dB	-40 Cel				2000 MHz	6000 MHz
HMC591LP5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					7	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
HMC999	Analog Devices	WIDE BAND HIGH POWER				GAN	1	36 dBm	7	1100 mA	COMPONENT	48	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	8.5 dB	-55 Cel	Gold (Au)		e4	10 MHz	10000 MHz
HMC8205BCHIPS	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm		85 Cel	24.5 dB	-55 Cel				400 MHz	6000 MHz
HMC8114	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm		64 Cel	53 dB	-20 Cel		TTL COMPATIBLE		5800 MHz	18000 MHz
HMC1114LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC1114LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC7885FH18	Analog Devices	WIDE BAND HIGH POWER						36 dBm	2		MODULE			50 ohm		60 Cel	21 dB	-30 Cel				2000 MHz	6000 MHz
HMC591LP5	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	TIN LEAD		e0	6000 MHz	9500 MHz
HMC1121LP6GETR	Analog Devices	WIDE BAND HIGH POWER						24 dBm			COMPONENT			50 ohm		85 Cel	25 dB	-40 Cel	MATTE TIN		e3	5500 MHz	8500 MHz
HMC995LP5GETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					7	LCC24,.2SQ,25		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC8500LP5DE	Analog Devices	WIDE BAND HIGH POWER
HMC8113	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm		50 Cel	85 dB	10 Cel		TTL COMPATIBLE		2000 MHz	6000 MHz
HMC591LP5TR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					7	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC591LP5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6000 MHz	9500 MHz
DB-85025-520	STMicroelectronics	WIDE BAND HIGH POWER							20		COAXIAL					85 Cel	18 dB	-20 Cel				340 MHz	520 MHz
AB-54003L-512	STMicroelectronics	WIDE BAND HIGH POWER									COAXIAL					85 Cel		-20 Cel				380 MHz	512 MHz
BGD902	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		435 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
933793560112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
934055915112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20.8 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
934015680112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGD814,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD906,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY785A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
OM2081/87	NXP Semiconductors	WIDE BAND HIGH POWER							1.3		MODULE			75 ohm								40 MHz	860 MHz
BGY588	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
934055918112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGD714,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.8 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	750 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.