Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
10 MHz |
1100 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
30 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
50 MHz |
1500 MHz |
||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
25 dBm |
COMPONENT |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
5600 MHz |
7100 MHz |
||||||||||||||||
|
Infineon Technologies |
WIDE BAND HIGH POWER |
42 dBm |
10 |
COMPONENT |
50 ohm |
29 dB |
Tin (Sn) |
e3 |
700 MHz |
1000 MHz |
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|
Wolfspeed |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAN |
1 |
21 dBm |
4 |
COMPONENT |
LCC24,.2SQ,25 |
50 ohm |
34.2 dB |
8000 MHz |
12000 MHz |
||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAN |
1 |
21 dBm |
4 |
COMPONENT |
LCC24,.2SQ,25 |
50 ohm |
34.2 dB |
8000 MHz |
12000 MHz |
||||||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
6 |
LCC16,.24SQ,40/32 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HYBRID |
IEC-61249-2-21 |
1 |
20 dBm |
5 |
2300 mA |
COMPONENT |
7 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
LOW NOISE |
150 MHz |
960 MHz |
||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
2800 MHz |
||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
2800 MHz |
||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAN |
1 |
20 dBm |
3 |
70 mA |
COMPONENT |
-2.7,20 |
50 ohm |
25 dB |
13000 MHz |
18000 MHz |
|||||||||||
|
Broadcom |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
930 mA |
MODULE |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
13.5 dB |
1700 MHz |
2700 MHz |
||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
2 |
28 |
FLNG,.67"H.SPACE |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
30 dBm |
COMPONENT |
50 ohm |
85 Cel |
28 dB |
-40 Cel |
HIGH RELIABILITY |
7900 MHz |
11000 MHz |
||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
GAN |
1 |
37 dBm |
3 |
COMPONENT |
22 |
DIE OR CHIP |
50 ohm |
85 Cel |
18.4 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
1.22 |
COMPONENT |
5 |
LCC16,.2SQ,32 |
50 ohm |
30 dB |
850 MHz |
960 MHz |
||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
31 dBm |
COMPONENT |
11 dB |
0 MHz |
12000 MHz |
||||||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
25 dBm |
COMPONENT |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
5600 MHz |
7100 MHz |
||||||||||||||||
Mini-circuits |
WIDE BAND HIGH POWER |
10 dBm |
2 |
COAXIAL |
50 ohm |
65 Cel |
29 dB |
-20 Cel |
Tin/Lead (Sn/Pb) |
BNC |
e0 |
5 MHz |
500 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND HIGH POWER |
28 dBm |
COMPONENT |
50 ohm |
13.5 dB |
1700 MHz |
2700 MHz |
|||||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HEMT |
1 |
15 |
COMPONENT |
28 |
SOLCC8,.23 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
20 MHz |
1000 MHz |
||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HEMT |
1 |
15 |
COMPONENT |
28 |
SOLCC8,.23 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
20 MHz |
1000 MHz |
||||||||||
|
Rf Micro Devices |
WIDE BAND HIGH POWER |
CERAMIC |
1 |
37 dBm |
10 |
MODULE |
28/48 |
FLNG,.59"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
0 MHz |
3000 MHz |
|||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
25 dBm |
COMPONENT |
85 Cel |
15 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
7000 MHz |
9000 MHz |
||||||||||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
6 |
CERAMIC |
PHEMT |
1 |
3 |
1000 mA |
COMPONENT |
28 |
50 ohm |
105 Cel |
31 dB |
-40 Cel |
5200 MHz |
5900 MHz |
||||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
2 |
28 |
FLNG,.67"H.SPACE |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
GAN |
1 |
25 dBm |
10 |
400 mA |
COMPONENT |
-2.8,28 |
DIE OR CHIP |
50 ohm |
275 Cel |
27 dB |
2000 MHz |
6000 MHz |
||||||||||
|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
25 dBm |
COMPONENT |
85 Cel |
15 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
7000 MHz |
9000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
24 dBm |
COMPONENT |
50 ohm |
85 Cel |
25 dB |
-40 Cel |
MATTE TIN |
e3 |
5500 MHz |
8500 MHz |
|||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
28 dBm |
960 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
MATTE TIN |
e3 |
400 MHz |
2400 MHz |
||||||||
|
Skyworks Solutions |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
METAL |
HYBRID |
1 |
6 dBm |
1.5 |
800 mA |
COMPONENT |
28 |
MOT CASE 301AP-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29.5 dB |
-20 Cel |
800 MHz |
925 MHz |
||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PANEL MOUNT |
7 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
6.25 dBm |
340 mA |
MODULE |
24 |
75 ohm |
100 Cel |
34.5 dB |
-20 Cel |
40 MHz |
550 MHz |
||||||||||
|
Skyworks Solutions |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
1300 mA |
COMPONENT |
3.6 |
LCC12,.32SQ,75/64 |
50 ohm |
85 Cel |
35 dB |
-40 Cel |
Gold (Au) |
HIGH RELIABILITY |
e4 |
390 MHz |
500 MHz |
|||||||
Texas Instruments |
WIDE BAND HIGH POWER |
30 dBm |
1.9 |
COMPONENT |
16 dB |
8000 MHz |
10500 MHz |
||||||||||||||||||||
Texas Instruments |
WIDE BAND HIGH POWER |
13 dBm |
6 |
COMPONENT |
85 Cel |
30 dB |
-40 Cel |
800 MHz |
1000 MHz |
||||||||||||||||||
Texas Instruments |
WIDE BAND HIGH POWER |
13 dBm |
85 Cel |
30 dB |
-40 Cel |
800 MHz |
1000 MHz |
||||||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
40 |
GAN |
1 |
31 dBm |
1.54 |
COMPONENT |
LCC40,.24SQ,20 |
50 ohm |
85 Cel |
27 dB |
-40 Cel |
4800 MHz |
6000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
PANEL MOUNT |
7 |
PHEMT |
1 |
75 dBm |
490 mA |
MODULE |
24 |
75 ohm |
85 Cel |
25 dB |
-30 Cel |
45 MHz |
1218 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
PANEL MOUNT |
8 |
PHEMT |
1 |
75 dBm |
490 mA |
MODULE |
24 |
75 ohm |
85 Cel |
25 dB |
-30 Cel |
45 MHz |
1218 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
PANEL MOUNT |
8 |
HYBRID |
1 |
550 mA |
MODULE |
34 |
SOT-115J |
75 ohm |
85 Cel |
26.7 dB |
-30 Cel |
45 MHz |
1218 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
9 |
PHEMT |
1 |
500 mA |
COMPONENT |
24 |
75 ohm |
110 Cel |
23 dB |
-30 Cel |
45 MHz |
1218 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
9 |
PHEMT |
1 |
500 mA |
COMPONENT |
24 |
75 ohm |
110 Cel |
23 dB |
-30 Cel |
45 MHz |
1218 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.