Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
250 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
600 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
380 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
900 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
1.4 |
MODULE |
75 ohm |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
29 dB |
-20 Cel |
LOW NOISE |
40 MHz |
750 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
90 Cel |
21.5 dB |
-20 Cel |
LOW NOISE |
5 MHz |
200 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
35 dB |
-20 Cel |
LOW NOISE |
40 MHz |
550 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
18.8 dB |
-20 Cel |
LOW NOISE |
40 MHz |
550 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
16.25 dBm |
MODULE |
75 ohm |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
22 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
35 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
5 MHz |
200 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
HYBRID |
1 |
375 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
22 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
870 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
1.4 |
MODULE |
75 ohm |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
LDMOS |
1 |
20 dBm |
10 |
COMPONENT |
48 |
50 ohm |
150 Cel |
35 dB |
-40 Cel |
TIN |
e3 |
575 MHz |
960 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
600 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
340 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
34 dB |
-20 Cel |
LOW NOISE |
40 MHz |
860 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
20 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
20 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
28 dB |
-20 Cel |
LOW NOISE |
40 MHz |
870 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
25.6 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
22 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
870 MHz |
|||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
|||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
20 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
20.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
||||||||||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
410 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.8 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
|||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
22 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
870 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
|||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
34 dB |
-20 Cel |
LOW NOISE |
40 MHz |
860 MHz |
||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
|||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
21.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
|||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
320 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
34 dB |
-20 Cel |
LOW NOISE |
40 MHz |
750 MHz |
|||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
600 MHz |
|||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
5 |
COMPONENT |
26 |
FLNG,.8''H SPACE |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-10 Cel |
Tin/Lead (Sn/Pb) |
IT CAN ALSO OPERATE AT 921 TO 960 MHZ |
e0 |
860 MHz |
960 MHz |
||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
380 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.5 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
900 MHz |
|||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.25 dBm |
435 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.5 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
900 MHz |
||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
20 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
10 |
COMPONENT |
50 ohm |
150 Cel |
26.5 dB |
132 MHz |
960 MHz |
||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
16.25 dBm |
135 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
24.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
5 MHz |
120 MHz |
||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
380 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
900 MHz |
|||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.25 dBm |
435 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.5 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
900 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
19 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
900 MHz |
|||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
19 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
600 MHz |
|||||||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
3 dBm |
1.25 |
MODULE |
50 ohm |
100 Cel |
24 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
870 MHz |
||||||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
410 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
|||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
33.2 dB |
-20 Cel |
LOW NOISE |
40 MHz |
750 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.