WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SPF5043Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	25 dBm		54 mA	COMPONENT	5	SOT-143R	50 ohm	RF/Microwave Amplifiers	85 Cel	11.4 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	4000 MHz
SPF-5043Z	Sirenza Microdevices	WIDE BAND LOW POWER						25 dBm			COMPONENT			50 ohm		85 Cel	6.7 dB	-40 Cel				100 MHz	4000 MHz
SBB5089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
SBB5089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
SBB-5089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
HMC903LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	20 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm		85 Cel	18.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	6000 MHz	17000 MHz
SPF5043ZSQ	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	25 dBm		54 mA	COMPONENT	5	SOT-143R	50 ohm	RF/Microwave Amplifiers	85 Cel	11.4 dB	-40 Cel				50 MHz	4000 MHz
SPF5043ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	25 dBm		54 mA	COMPONENT	5	SOT-143R	50 ohm	RF/Microwave Amplifiers	85 Cel	11.4 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	4000 MHz
HMC903LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	6000 MHz	17000 MHz
MGA-62563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.4 dB		Tin (Sn)		e3	100 MHz	3000 MHz
TRF37C73IDSGT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		65 mA	COMPONENT	3.3		50 ohm		85 Cel	18 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	1 MHz	6000 MHz
HMC451LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	18000 MHz
HMC441LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6500 MHz	13500 MHz
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
ADL9005ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
ADL5536ARKZ-R7	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	18.1 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	20 MHz	1000 MHz
MGA-62563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.4 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
HMC441LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6500 MHz	13500 MHz
HMC8410LP2FE	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	13 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
A2I09VD015NR1	NXP Semiconductors	WIDE BAND LOW POWER																	TIN		e3
HMC8410LP2FETR	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	13 dB	-40 Cel	MATTE TIN		e3	10 MHz	10000 MHz
PMA3-83LNW+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	PHEMT	1	16 dBm	1.13	94 mA	COMPONENT	5/6		50 ohm		105 Cel	16.9 dB	-40 Cel				400 MHz	8000 MHz
HMC963LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	0 dBm		65 mA	COMPONENT	3.5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	TUNGSTEN NICKEL GOLD			6000 MHz	26500 MHz
MGA-62563-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.4 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
MGA-62563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	3000 MHz
MGA-62563-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2	77 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	3000 MHz
BGA616H6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel	TIN		e3	0 MHz	2700 MHz
MGA-82563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.2	101 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	8.8 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	100 MHz	6000 MHz
TCBT-14+	Mini-circuits	WIDE BAND LOW POWER						30 dBm	1.5		COMPONENT			50 ohm		85 Cel		-40 Cel	GOLD OVER NICKEL		e4	10 MHz	10000 MHz
BGU8052X	NXP Semiconductors	WIDE BAND LOW POWER
HMC8411LP2FETR	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
MAAL-010704-TR3000	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	24 dBm		75 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	95 Cel	10 dB	-40 Cel	MATTE TIN		e3	100 MHz	3500 MHz
MGA-61563-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	18 dBm	2	48 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		6.9 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
HMC564LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	20 dBm		75 mA	COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD NICKEL		e4	7000 MHz	14000 MHz
HMC788ALP2ETR	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
MAX2640EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	300 MHz	1500 MHz
MAX2640EUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	300 MHz	1500 MHz
SMA3107-TL-E	Onsemi	WIDE BAND LOW POWER																	TIN BISMUTH		e6
ADL8107ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	22 dBm	1.54		COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	18 dB	-40 Cel				6000 MHz	18000 MHz
HMC441LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN LEAD		e0	6500 MHz	13500 MHz
HMC451LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		150 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	18000 MHz
HMC635LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	70 Cel		-55 Cel
HMC311SC70ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	8000 MHz
HMC451LC3TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel				5000 MHz	20000 MHz
MGA-81563-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE, HIGH RELIABILITY	e3	100 MHz	6000 MHz
HMC8412LP2FETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
935363184528	NXP Semiconductors	WIDE BAND LOW POWER																	Tin (Sn)		e3
HMC1040LP3CETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	5 dBm		85 mA	COMPONENT	2.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				24000 MHz	43500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.