Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
5000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
22 |
PHEMT |
1 |
50 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
85 Cel |
19.5 dB |
-55 Cel |
71000 MHz |
86000 MHz |
|||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
2 |
48 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
6.9 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
|||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
10 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
50 MHz |
1300 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
52 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
MATTE TIN |
e3 |
1 MHz |
2700 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
42 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
0 MHz |
700 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
26500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.6 |
COMPONENT |
3.5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
15.5 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
2500 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8.8 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
6000 MHz |
||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5500 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
0 MHz |
5500 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.4 |
43 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
MATTE TIN |
e3 |
6000 MHz |
18000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
1 |
25 dBm |
1.375 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
400 MHz |
11000 MHz |
|||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
18 |
1 |
33 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
2000 MHz |
20000 MHz |
|||||||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
6000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
15 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
18000 MHz |
40000 MHz |
|||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2.5 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
12000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
PHEMT |
1 |
12 dBm |
1.22 |
90 mA |
COMPONENT |
6 |
50 ohm |
85 Cel |
20.3 dB |
-40 Cel |
50 MHz |
10000 MHz |
|||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
TIN |
HIGH RELIABILITY |
e3 |
50 MHz |
4000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.4 |
43 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
20 mA |
COMPONENT |
3.5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
800 MHz |
|||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.3 |
65 mA |
COMPONENT |
4.2 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.3 |
65 mA |
COMPONENT |
4.2 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
e2 |
0 MHz |
4000 MHz |
||||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.2 |
39 mA |
COMPONENT |
3.2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
|||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.8 |
83 mA |
COMPONENT |
5.1 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
3500 MHz |
|||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
3.2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
0 MHz |
5000 MHz |
|||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
83 mA |
COMPONENT |
5.1 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
3500 MHz |
||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
24 dB |
-40 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
3000 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
-5 dBm |
COMPONENT |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
24000 MHz |
28000 MHz |
|||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
18000 MHz |
31500 MHz |
|||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
22.5 dBm |
1.67 |
75 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
30 MHz |
8000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
BIPOLAR |
1 |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
7000 MHz |
15000 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
2 dBm |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
17000 MHz |
26000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
105 Cel |
20.2 dB |
-40 Cel |
LOW NOISE |
1 MHz |
1000 MHz |
||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
98 mA |
COMPONENT |
4.9 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.2 dB |
-40 Cel |
0 MHz |
500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
5 dBm |
88 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
9000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
2000 MHz |
28000 MHz |
||||||||||||||||
Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-25 Cel |
0 MHz |
1800 MHz |
||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BICMOS |
1 |
10 dBm |
5.6 mA |
COMPONENT |
2.7 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
MATTE TIN |
e3 |
100 MHz |
2500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
80 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
10 dBm |
75 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
20000 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
E-PHEMT |
1 |
16 dBm |
1.19 |
94 mA |
COMPONENT |
6 |
50 ohm |
125 Cel |
18.5 dB |
-40 Cel |
HIGH RELIABILITY |
500 MHz |
8000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
1.8/3.3 |
BGA4,2X2,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.1 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
e2 |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
15 dBm |
2 |
COMPONENT |
20 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
3500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.