WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
AG302-86G	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	13.3 dB	-40 Cel		HIGH RELIABILITY		0 MHz	6000 MHz
BGM1013	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
HMC311LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	6000 MHz
HMC8411TCPZ-EP-PT	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		125 Cel	11 dB	-55 Cel				10 MHz	10000 MHz
HMC907ALP5ETR	Analog Devices	WIDE BAND LOW POWER
MSA-3111	Broadcom	WIDE BAND LOW POWER						13 dBm	1.2		COMPONENT			50 ohm			23.5 dB		Tin (Sn)	HIGH RELIABILITY	e3	0 MHz	500 MHz
SGA3463Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.9	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
SGA-3463Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.9	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	5000 MHz
CMD317C4	Qorvo	WIDE BAND LOW POWER
GALI-39	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	2.3		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	17.7 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	7000 MHz
GALI-39+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	13 dBm	2.3		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	17.7 dB	-45 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	7000 MHz
HMC441LM1	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC8,.2SQ,40	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	GOLD OVER NICKEL		e4	7000 MHz	15500 MHz
MGA-30889-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	20 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.6 dB		Tin (Sn)		e3	40 MHz	2600 MHz
HMC392ALC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24		GAAS	1	20 dBm		75 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	14.5 dB	-40 Cel	GOLD NICKEL	HIGH RELIABILITY	e4	3500 MHz	8000 MHz
LEE-39	Mini-circuits	WIDE BAND LOW POWER						13 dBm	1.6		COMPONENT			50 ohm		85 Cel	18.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	USABLE TO 10 GHZ	e0	0 MHz	8000 MHz
LEE-39+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY		1	13 dBm	1.6		COMPONENT	3.5	LCC4(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	TIN SILVER OVER NICKEL	USABLE TO 10 GHZ	e2	0 MHz	8000 MHz
MGA-72543-TR1G	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1	20 dBm	2.1		COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers		9.2 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
SGA-3363	Rf Micro Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		39 mA	COMPONENT	2.6	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel				0 MHz	5500 MHz
TSS-53LNB+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	E-PHEMT	1	8 dBm		105 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm		85 Cel	19.5 dB	-40 Cel				500 MHz	5000 MHz
ADL8142ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm	1.38		COMPONENT	2	SOLCC8,.08,20	50 ohm		85 Cel	24.5 dB	-40 Cel				23000 MHz	31000 MHz
HMC462-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3		PHEMT	1	18 dBm	1.25	84 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				2000 MHz	20000 MHz
HMC636ST89	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	16 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	200 MHz	4000 MHz
RF2374SR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1					3	LCC8,.08SQ,25		RF/Microwave Amplifiers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
HMC565LC5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	10 dBm		75 mA	COMPONENT	3	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	GOLD NICKEL		e4	6000 MHz	20000 MHz
MGA-72543BLK	Agilent Technologies	WIDE BAND LOW POWER						20 dBm	2.1		COMPONENT			50 ohm			9.2 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	6000 MHz
MGA-72543-BLK	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1	20 dBm	2.1		COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	85 Cel	9.2 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	6000 MHz
AMMP-6220-TR2	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	15 dBm		70 mA	COMPONENT	3	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		22 dB		Nickel/Gold (Ni/Au)		e4	6000 MHz	20000 MHz
HMC-ALH140	Analog Devices	WIDE BAND LOW POWER				GAAS	1	6 dBm		100 mA	COMPONENT	4	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	Gold (Au)	LOW NOISE	e4	24000 MHz	40000 MHz
HMC3653LP3BETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1			55 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3	7000 MHz	15000 MHz
HMC902LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm		110 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5000 MHz	10000 MHz
HMC963LC4TR-R5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	PHEMT	1	0 dBm	1.92	65 mA	COMPONENT	3.5	LCC24,.16SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	6000 MHz	26500 MHz
AMMP-6220	Broadcom	WIDE BAND LOW POWER									COMPONENT			50 ohm			18 dB		Nickel/Palladium/Gold (Ni/Pd/Au)		e4	6000 MHz	20000 MHz
AMMP-6220-BLK	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	15 dBm		70 mA	COMPONENT	3	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		22 dB		Nickel/Gold (Ni/Au)		e4	6000 MHz	20000 MHz
GVA-63+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	13 dBm		78 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	10 MHz	6000 MHz
HMC311SC70E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	0 MHz	8000 MHz
HMC561LP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Frequency Multipliers	85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	21000 MHz
HMC717ALP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm		85 Cel	11 dB	-40 Cel	MATTE TIN		e3	4800 MHz	6000 MHz
HMC717ALP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC12,.12SQ,20	50 ohm		85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4800 MHz	6000 MHz
HMC8325	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT	1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm		85 Cel	19.5 dB	-55 Cel				71000 MHz	86000 MHz
MGA-81563-TR1	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	2	51 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE, HIGH RELIABILITY	e0	100 MHz	6000 MHz
MMG3012NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17.5 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
NBB-400-T1	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	BIPOLAR	1	20 dBm	1.9		COMPONENT	3.9	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-45 Cel				0 MHz	8000 MHz
RF2374TR7	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	3	LCC8,.08SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	800 MHz	3800 MHz
AD8354ACPZ-REEL7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		34 mA	COMPONENT	3/5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	MATTE TIN		e3	1 MHz	2700 MHz
HMC460LC5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	18 dBm			COMPONENT	8	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-55 Cel	GOLD OVER NICKEL		e4	0 MHz	20000 MHz
HMC564LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	20 dBm		75 mA	COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD OVER NICKEL		e4	7000 MHz	14000 MHz
HMC606LC5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	CERAMIC	GAAS	1	15 dBm		95 mA	COMPONENT	5	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	GOLD OVER NICKEL		e4	2000 MHz	18000 MHz
HMC816LP4ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	2			126 mA		5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.