Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
82 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
|||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
13 dBm |
2.5 |
COMPONENT |
50 ohm |
20 dB |
Matte Tin (Sn) |
e3 |
1500 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.9 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.6 dB |
-40 Cel |
10 MHz |
8000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2000 MHz |
6000 MHz |
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Cml Microcircuits |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
20000 MHz |
44000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
60 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
MATTE TIN |
e3 |
4000 MHz |
10000 MHz |
|||||||
Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
LOW NOISE |
0 MHz |
1800 MHz |
|||||||||
Mini-circuits |
WIDE BAND LOW POWER |
15 dBm |
1.6 |
COMPONENT |
50 ohm |
85 Cel |
13.3 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
USABLE TO 10 GHZ |
e0 |
0 MHz |
8000 MHz |
||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.6 |
COMPONENT |
3.6 |
MODULE,4LEAD(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.3 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
8000 MHz |
|||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
2 MHz |
1600 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
1 |
13 dBm |
2 |
70 mA |
COMPONENT |
5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
6000 MHz |
|||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
28 dBm |
120 mA |
COMPONENT |
3.3 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.4 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
LOW NOISE, HIGH RELIABILITY |
e2 |
50 MHz |
6000 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
21 dBm |
1.8 |
COAXIAL |
50 ohm |
85 Cel |
4.5 dB |
-40 Cel |
SMA |
50 MHz |
3000 MHz |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
22.7 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
|||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
Cml Microcircuits |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2 |
85 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
0 MHz |
4000 MHz |
|||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2 |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
4000 MHz |
|||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2.2 |
COMPONENT |
4.8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
4000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
2.2 |
COMPONENT |
4.8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
0 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
LOW NOISE |
24000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
88 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
GOLD |
e4 |
7000 MHz |
17000 MHz |
|||||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
1.8 |
COMPONENT |
3.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
0 MHz |
1000 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
1.8 |
COMPONENT |
3.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier |
LOW NOISE |
e2 |
0 MHz |
1000 MHz |
|||||
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
0 MHz |
1100 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
0 MHz |
1100 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
1400 MHz |
3800 MHz |
|||||||||
|
Microchip Technology |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
78 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
18000 MHz |
||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
Sirenza Microdevices |
WIDE BAND LOW POWER |
18 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
5 MHz |
2000 MHz |
|||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
18 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
5 MHz |
2000 MHz |
||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
10 |
7 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
5 MHz |
2000 MHz |
|||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
21 dBm |
COMPONENT |
50 ohm |
105 Cel |
14.5 dB |
-40 Cel |
700 MHz |
3800 MHz |
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Api Technologies |
WIDE BAND LOW POWER |
10 dBm |
2 |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
I/P POWER-MAX (PEAK)=27DBM |
1000 MHz |
2000 MHz |
||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
GAAS |
1 |
22 dBm |
COMPONENT |
5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
17.5 dB |
2000 MHz |
20000 MHz |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
29 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
30 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
1000 MHz |
||||||||
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
50 ohm |
105 Cel |
16 dB |
-40 Cel |
10 MHz |
11000 MHz |
||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
13 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
|||||||||
|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Wolfspeed |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.6 |
40 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.9 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
6000 MHz |
|||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.7 |
40 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
6000 MHz |
|||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
2.6 |
COMPONENT |
3.5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
0 MHz |
8000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.