WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC478ST89ETR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

82 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

MATTE TIN

e3

0 MHz

4000 MHz

HMC694LP4ETR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

5

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

MATTE TIN

e3

MGA-86576-TR1G

Broadcom

WIDE BAND LOW POWER

13 dBm

2.5

COMPONENT

50 ohm

20 dB

Matte Tin (Sn)

e3

1500 MHz

8000 MHz

ADL5535ARKZ-R7

Analog Devices

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

14.9 dB

-40 Cel

MATTE TIN

e3

20 MHz

1000 MHz

ADL8111ACCZN

Analog Devices

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

10.6 dB

-40 Cel

10 MHz

8000 MHz

CMD283C3

Qorvo

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

2000 MHz

6000 MHz

CMX90B702QF-R705

Cml Microcircuits

WIDE BAND LOW POWER

HMC1040CHIPS

Analog Devices

WIDE BAND LOW POWER

5 dBm

COMPONENT

50 ohm

85 Cel

19 dB

-55 Cel

20000 MHz

44000 MHz

HMC3587LP3BETR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BIPOLAR

1

12 dBm

60 mA

COMPONENT

5

LCC12,.12SQ,20

50 ohm

85 Cel

15 dB

-40 Cel

MATTE TIN

e3

4000 MHz

10000 MHz

INA-10386-BLK

Agilent Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

13 dBm

1.5

55 mA

COMPONENT

6

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

23 dB

LOW NOISE

0 MHz

1800 MHz

LEE-29

Mini-circuits

WIDE BAND LOW POWER

15 dBm

1.6

COMPONENT

50 ohm

85 Cel

13.3 dB

-40 Cel

Tin/Lead (Sn/Pb)

USABLE TO 10 GHZ

e0

0 MHz

8000 MHz

LEE-29+

Mini-circuits

WIDE BAND LOW POWER

4

PLASTIC/EPOXY

1

15 dBm

1.6

COMPONENT

3.6

MODULE,4LEAD(UNSPEC)

50 ohm

RF/Microwave Amplifiers

85 Cel

13.3 dB

-40 Cel

TIN SILVER OVER NICKEL

USABLE TO 10 GHZ

e2

0 MHz

8000 MHz

MAX9931EUA+T

Maxim Integrated

WIDE BAND LOW POWER

16 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

e3

2 MHz

1600 MHz

MGA-53543-BLKG

Broadcom

WIDE BAND LOW POWER

PLASTIC/EPOXY

1

13 dBm

2

70 mA

COMPONENT

5

SOT-343R

50 ohm

RF/Microwave Amplifiers

14 dB

Matte Tin (Sn)

LOW NOISE

e3

50 MHz

6000 MHz

PGA-102+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

28 dBm

120 mA

COMPONENT

3.3

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

14.4 dB

-40 Cel

TIN SILVER OVER NICKEL

LOW NOISE, HIGH RELIABILITY

e2

50 MHz

6000 MHz

ZX60-P103LN+

Mini-circuits

WIDE BAND LOW POWER

21 dBm

1.8

COAXIAL

50 ohm

85 Cel

4.5 dB

-40 Cel

SMA

50 MHz

3000 MHz

BGA2818,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

22.7 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

CMD244K5

Qorvo

WIDE BAND LOW POWER

CMX90B702QF-R710

Cml Microcircuits

WIDE BAND LOW POWER

GALI-6+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

20 dBm

2

85 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

TIN SILVER OVER NICKEL

HIGH RELIABILITY

e2

0 MHz

4000 MHz

GALI-6

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

20 dBm

2

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-45 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

0 MHz

4000 MHz

GALI-6F

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

20 dBm

2.2

COMPONENT

4.8

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-45 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

0 MHz

4000 MHz

GALI-6F+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

20 dBm

2.2

COMPONENT

4.8

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-45 Cel

TIN SILVER OVER NICKEL

HIGH RELIABILITY

e2

0 MHz

4000 MHz

HMC-ALH244

Analog Devices

WIDE BAND LOW POWER

6 dBm

COMPONENT

50 ohm

85 Cel

10 dB

-55 Cel

LOW NOISE

24000 MHz

40000 MHz

HMC476MP86E

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

COMPONENT

5

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

9 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

6000 MHz

HMC516

Analog Devices

WIDE BAND LOW POWER

GAAS

1

5 dBm

88 mA

COMPONENT

3

DIE OR CHIP

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-55 Cel

GOLD

e4

7000 MHz

17000 MHz

MAR-8ASM

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

HYBRID

1

13 dBm

1.8

COMPONENT

3.7

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

0 MHz

1000 MHz

MAR-8ASM+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

HYBRID

1

13 dBm

1.8

COMPONENT

3.7

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier

LOW NOISE

e2

0 MHz

1000 MHz

MAX2611EUS-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

13 dBm

1.6

COMPONENT

3.8

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

17.3 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

0 MHz

1100 MHz

MAX2611EUS+T

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

13 dBm

1.6

COMPONENT

3.8

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

17.3 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

0 MHz

1100 MHz

MGA-632P8-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

20 dBm

COMPONENT

4

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

16 dB

Matte Tin (Sn)

e3

1400 MHz

3800 MHz

MMA044PP3

Microchip Technology

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

PHEMT

1

78 mA

COMPONENT

4

LCC16,.12SQ,20

50 ohm

85 Cel

16 dB

-40 Cel

6000 MHz

18000 MHz

QPA2735TR7

Qorvo

WIDE BAND LOW POWER

SGL-0363Z

Sirenza Microdevices

WIDE BAND LOW POWER

18 dBm

10

COMPONENT

50 ohm

85 Cel

17 dB

-40 Cel

5 MHz

2000 MHz

SGL0363Z

Qorvo

WIDE BAND LOW POWER

18 dBm

10

COMPONENT

50 ohm

85 Cel

15 dB

-40 Cel

5 MHz

2000 MHz

SGL0363ZSR

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

10

7 mA

COMPONENT

3.3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

15 dB

-40 Cel

5 MHz

2000 MHz

SKY67151-396LF

Skyworks Solutions

WIDE BAND LOW POWER

21 dBm

COMPONENT

50 ohm

105 Cel

14.5 dB

-40 Cel

700 MHz

3800 MHz

SP9711

Api Technologies

WIDE BAND LOW POWER

10 dBm

2

COMPONENT

50 ohm

85 Cel

10 dB

-55 Cel

I/P POWER-MAX (PEAK)=27DBM

1000 MHz

2000 MHz

TGA2526

Qorvo

WIDE BAND LOW POWER

GAAS

1

22 dBm

COMPONENT

5

DIE OR CHIP

RF/Microwave Amplifiers

17.5 dB

2000 MHz

20000 MHz

UPC2710TB-E3

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

29 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

30 dB

-40 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

1000 MHz

XTRF1208RPVR

Texas Instruments

WIDE BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BICMOS

1

COMPONENT

3.3

LCC12,.08SQ,20

50 ohm

105 Cel

16 dB

-40 Cel

10 MHz

11000 MHz

AMMP-5618-TR1

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

140 mA

COMPONENT

5

LCC8,.2SQ,28

50 ohm

RF/Microwave Amplifiers

13 dB

Nickel/Gold (Ni/Au)

e4

6000 MHz

20000 MHz

CMD274P4

Qorvo

WIDE BAND LOW POWER

CMD311P34

Qorvo

WIDE BAND LOW POWER

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER

ERA-2SM+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

15 dBm

1.6

40 mA

COMPONENT

3

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

11.9 dB

-45 Cel

TIN SILVER OVER NICKEL

USABLE TO 10 GHZ

e2

0 MHz

6000 MHz

ERA-2SM

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

15 dBm

1.7

40 mA

COMPONENT

3

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-45 Cel

Tin/Lead (Sn/Pb)

e0

0 MHz

6000 MHz

GALI-2+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

15 dBm

2.6

COMPONENT

3.5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-45 Cel

TIN SILVER OVER NICKEL

HIGH RELIABILITY

e2

0 MHz

8000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.