Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
150 Cel |
11 dB |
-65 Cel |
TIN |
e3 |
100 MHz |
1800 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.7 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
50 MHz |
4000 MHz |
||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
65 mA |
COMPONENT |
3/5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
400 MHz |
4000 MHz |
|||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
0 dBm |
COMPONENT |
5 |
TSOP8,.3,38 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
2 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
40 MHz |
960 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
18000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
7100 MHz |
7900 MHz |
|||||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
2 |
48 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
6.9 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
|||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
17.5 dB |
-65 Cel |
TIN |
e3 |
0 MHz |
2400 MHz |
|||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
105 Cel |
19.9 dB |
-40 Cel |
500 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
84 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
||||||||||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
6000 MHz |
||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
4000 MHz |
20000 MHz |
|||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
22 dBm |
1.54 |
100 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
17.5 dB |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
100 MHz |
6000 MHz |
|||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
GAAS |
1 |
12 dBm |
50 mA |
COMPONENT |
5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-55 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
20000 MHz |
40000 MHz |
|||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20.4 dB |
-40 Cel |
MATTE TIN |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
114 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
GOLD OVER NICKEL |
SMA |
e4 |
5000 MHz |
20000 MHz |
|||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Motorola |
WIDE BAND LOW POWER |
3 |
METAL |
HYBRID |
20 dBm |
3 |
100 mA |
MODULE |
CAN3/4,.2 |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
-25 Cel |
Tin/Lead (Sn/Pb) |
e0 |
.1 MHz |
1000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
5000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
10000 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE, HIGH RELIABILITY |
e3 |
100 MHz |
6000 MHz |
||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
12 dBm |
COMPONENT |
50 ohm |
19.3 dB |
MATTE TIN |
e3 |
40 MHz |
3600 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
10000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
22 dBm |
1.54 |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
6000 MHz |
18000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
18 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
40000 MHz |
|||||||||||||||
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
65 mA |
COMPONENT |
3.3 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
1 MHz |
6000 MHz |
|||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
150 Cel |
13.6 dB |
-65 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
4.5 dB |
-40 Cel |
MATTE TIN |
e3 |
540 MHz |
|||||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2000 MHz |
18000 MHz |
|||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
24 dBm |
COMPONENT |
50 ohm |
105 Cel |
18.8 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
|||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
LOW NOISE |
e4 |
10 MHz |
40000 MHz |
||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
19 dBm |
98 mA |
COMPONENT |
4.9 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.2 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
500 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.8 |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
4000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
20 dBm |
124 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
105 Cel |
14.3 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
30 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
40000 MHz |
|||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
105 mA |
COMPONENT |
3.5 |
LCC16,.16SQ,20 |
50 ohm |
85 Cel |
26 dB |
-40 Cel |
13750 MHz |
18000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
7000 MHz |
14000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
2000 MHz |
28000 MHz |
||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
|||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
33 dBm |
85 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
21 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
600 MHz |
4200 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
5000 MHz |
10000 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.7 |
70 mA |
COMPONENT |
5.5 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-25 Cel |
Tin (Sn) |
e3 |
50 MHz |
1300 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
88 mA |
3 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.