Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
7500 MHz |
26500 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
28 dBm |
50 mA |
COMPONENT |
4 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
22.3 dB |
Matte Tin (Sn) |
e3 |
800 MHz |
3000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
20 dBm |
2 |
COMPONENT |
50 ohm |
20 dB |
0 MHz |
3500 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
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Broadcom |
WIDE BAND LOW POWER |
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|
Broadcom |
WIDE BAND LOW POWER |
HYBRID |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
6000 MHz |
20000 MHz |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
-16.5 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.7 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
0 MHz |
2200 MHz |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.22 |
6.6 mA |
COMPONENT |
0.8/1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
728 MHz |
960 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
MATTE TIN |
e3 |
|||||||||||||||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
1 |
21 dBm |
100 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
16.5 dB |
-40 Cel |
LOW NOISE |
200 MHz |
3800 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
13 dBm |
30 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
11000 MHz |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
88 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1000 MHz |
12000 MHz |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
15 dBm |
2 |
COMPONENT |
50 ohm |
17.5 dB |
0 MHz |
2500 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
28 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
90 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3400 MHz |
||||||
Teledyne Technologies |
WIDE BAND LOW POWER |
6 dBm |
1.9 |
COMPONENT |
50 ohm |
85 Cel |
29 dB |
-55 Cel |
I/P POWER-MAX (PEAK)=27DBM |
5 MHz |
500 MHz |
||||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
17 dBm |
COMPONENT |
50 ohm |
14 dB |
.03 MHz |
40000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
1 |
15 dBm |
80 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
18.5 dB |
26000 MHz |
43000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
250 mA |
COMPONENT |
4.5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Frequency Multipliers |
14 dB |
Nickel/Gold (Ni/Au) |
e4 |
30000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.7 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
||||||
Motorola |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
HYBRID |
435 mA |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
-20 Cel |
40 MHz |
450 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.9 |
40 mA |
COMPONENT |
7.8 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
20.5 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
1000 MHz |
|||||||
Motorola |
WIDE BAND LOW POWER |
3 |
METAL |
HYBRID |
-20 dBm |
3 |
55 mA |
MODULE |
CAN3/4,.2 |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
7 dB |
-25 Cel |
Tin/Lead (Sn/Pb) |
e0 |
.1 MHz |
1000 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
COMPONENT |
3.5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
7000 MHz |
||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-45 Cel |
6000 MHz |
|||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
COMPONENT |
15 dB |
2400 MHz |
2500 MHz |
|||||||||||||||||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
15 dBm |
2.1 |
COAXIAL |
50 ohm |
50 Cel |
16 dB |
0 Cel |
SMA, HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM |
10 MHz |
500 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-55 Cel |
Gold (Au) |
e4 |
24000 MHz |
40000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-55 Cel |
Gold (Au) |
LOW NOISE |
e4 |
18000 MHz |
40000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
35000 MHz |
70000 MHz |
||||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
TIN LEAD |
e0 |
5000 MHz |
18000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
2000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
42 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
0 MHz |
6000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
8 dBm |
95 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.2 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
18000 MHz |
31000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
MATTE TIN |
e3 |
1200 MHz |
2200 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
120 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
MATTE TIN |
e3 |
200 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
0 Cel |
TUNGSTEN NICKEL GOLD |
0 MHz |
18000 MHz |
||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
LOW NOISE |
e4 |
10000 MHz |
20000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.