Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Analog Devices |
WIDE BAND LOW POWER |
TUNGSTEN NICKEL GOLD |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
8000 MHz |
21000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
GOLD OVER NICKEL |
e4 |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
e3 |
700 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
2 dBm |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
17000 MHz |
26000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
11 dBm |
75 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
LOW NOISE, HIGH RELIABILITY |
e4 |
3500 MHz |
7000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
8000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
11 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
5000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
7100 MHz |
7900 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
100 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
4800 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
42 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
TTL COMPATIBLE |
e0 |
50 MHz |
800 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 dBm |
102 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
102 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
MATTE TIN |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
2 |
175 mA |
5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
33 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-55 Cel |
2000 MHz |
50000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
23 dBm |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-55 Cel |
2000 MHz |
35000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
14 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
5000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
8 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
1.5,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
9.5 dB |
-40 Cel |
0 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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|
Analog Devices |
WIDE BAND LOW POWER |
TUNGSTEN NICKEL GOLD |
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|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
LCC8,.2SQ,40 |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
17500 MHz |
24000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-55 Cel |
5000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
GAAS |
1 |
20 dBm |
75 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
14.5 dB |
-55 Cel |
3500 MHz |
7000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
2000 MHz |
30000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
135 mA |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-40 Cel |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
70 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
24000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Frequency Multipliers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
8000 MHz |
21000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
18 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
300 MHz |
20000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
55 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
8000 MHz |
21000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
18 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
300 MHz |
20000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
Gold (Au) |
e4 |
0 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
5000 MHz |
11000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.