Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
30 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
38535V;38534K;883S |
100k Rad(Si |
1 |
39 mA |
COMPONENT |
3/5,2.4,2.8 |
200 ohm |
110 Cel |
-3.8 dB |
-55 Cel |
10 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
2000 MHz |
30000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
42 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
7 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-55 Cel |
18000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
400 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
GAAS |
1 |
10 dBm |
135 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
12000 MHz |
30000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
140 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
5000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
100 mA |
COMPONENT |
8 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
23 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-55 Cel |
LOW NOISE |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
COMPONENT |
1.8,3.3 |
SOLCC8,.08,20 |
100 ohm |
85 Cel |
24.6 dB |
-40 Cel |
5900 MHz |
8500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
1 |
10 dBm |
COMPONENT |
2 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
5000 MHz |
||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
5 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TIN LEAD |
e0 |
5000 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
5000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
10 dBm |
110 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
1000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
3 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
260 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
700 MHz |
2200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
65 mA |
COMPONENT |
3/5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
400 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
10 dBm |
110 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
1000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
5000 MHz |
6000 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
6000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
82 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
17 dBm |
COMPONENT |
8 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
5000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
0 MHz |
8000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
17 dBm |
7 |
COMPONENT |
10 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
5000 MHz |
6000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
-5 dBm |
58 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-55 Cel |
GOLD |
e4 |
24000 MHz |
36000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
3 dBm |
COMPONENT |
3/5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
GOLD |
e4 |
24000 MHz |
30000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-55 Cel |
GOLD |
e4 |
6000 MHz |
18000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
8 dBm |
65 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
GOLD |
LOW NOISE |
e4 |
18000 MHz |
32000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
7.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.67 |
COMPONENT |
3 |
LCC16,.12SQ,20 |
85 Cel |
16 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4900 MHz |
5900 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
17 dBm |
7 |
COMPONENT |
10 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
40000 MHz |
|||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
100 mA |
COMPONENT |
8 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
5000 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
0 dBm |
10 mA |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
5000 MHz |
6000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
6000 MHz |
17000 MHz |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
85 mA |
8 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.