WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MAX2613ETA+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

1

20 dBm

1.43

COMPONENT

5

50 ohm

85 Cel

18.1 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

40 MHz

4000 MHz

MAX2641EUT+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

6.4 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.4 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1400 MHz

2500 MHz

MAX2613ETA+T

Analog Devices

WIDE BAND LOW POWER

Matte Tin (Sn) - annealed

e3

MAX2374EBT+

Analog Devices

WIDE BAND LOW POWER

10 dBm

10

COMPONENT

50 ohm

85 Cel

12.5 dB

-40 Cel

750 MHz

1000 MHz

MAX2615ETA+

Analog Devices

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

40 MHz

4000 MHz

MAX2630EUS+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

1.25

11 mA

COMPONENT

3

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

800 MHz

1000 MHz

MAX2641

Analog Devices

WIDE BAND LOW POWER

TIN LEAD

ULTRA LOW NOISE

e0

1400 MHz

2500 MHz

MAX2640EUT+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

6.4 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.8 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

400 MHz

1500 MHz

MAX2634AXT+T

Analog Devices

WIDE BAND LOW POWER

NICKEL GOLD PALLADIUM

MAX2612ETA+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

1

20 dBm

1.22

COMPONENT

5

50 ohm

85 Cel

17.5 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

40 MHz

4000 MHz

MAX2642EXT+

Analog Devices

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

e4

MAX2648EBT+

Analog Devices

WIDE BAND LOW POWER

15 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

5000 MHz

6000 MHz

MAX2643EXT+

Analog Devices

WIDE BAND LOW POWER

NICKEL GOLD PALLADIUM

MAX2472EUT+T

Analog Devices

WIDE BAND LOW POWER

10 dBm

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

500 MHz

2500 MHz

MAX2614ETA+T

Analog Devices

WIDE BAND LOW POWER

Matte Tin (Sn) - annealed

e3

MAX2612ETA+T

Analog Devices

WIDE BAND LOW POWER

Matte Tin (Sn) - annealed

e3

MAX2650EUS+

Analog Devices

WIDE BAND LOW POWER

13 dBm

1.3

COMPONENT

50 ohm

85 Cel

16.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

800 MHz

1000 MHz

MAX2634AXT/V+

Analog Devices

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

e4

ADL8106XCEZ

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

PHEMT

1

1.5

COMPONENT

3

LCC24,.2SQ,25

50 ohm

85 Cel

21 dB

-40 Cel

20000 MHz

54000 MHz

MAX2633EUT+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

1.25

11 mA

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2640AUT/V+

Analog Devices

WIDE BAND LOW POWER

MAX2615ETA/V+CKS

Analog Devices

WIDE BAND LOW POWER

MAX2615ETA/V+TCKS

Analog Devices

WIDE BAND LOW POWER

ADL8112ACCZ-R7

Analog Devices

WIDE BAND LOW POWER

ADL8112ACCZ

Analog Devices

WIDE BAND LOW POWER

NSVG1001MXTAG

Onsemi

WIDE BAND LOW POWER

SMA3117-TL-H

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

28 mA

COMPONENT

5

FL6,.06,25

50 ohm

RF/Microwave Amplifiers

85 Cel

30.5 dB

-40 Cel

TIN BISMUTH

e6

100 MHz

3000 MHz

SMA3107TL

Onsemi

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

21 dB

-40 Cel

SMA3101-TL-E

Onsemi

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

21.5 dB

-40 Cel

Tin/Bismuth (Sn/Bi)

e6

100 MHz

3000 MHz

SMA3001

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

15 mA

COMPONENT

3

TSSOP6,.08

50 ohm

20 dB

10 MHz

2000 MHz

SMA3107

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

7.7 mA

COMPONENT

3

FL6,.06,25

50 ohm

RF/Microwave Amplifiers

85 Cel

21 dB

-40 Cel

SMA3102

Onsemi

WIDE BAND LOW POWER

COMPONENT

85 Cel

21.5 dB

-40 Cel

SMA3101

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

12.6 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

21.5 dB

-40 Cel

SMA3005

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

8 mA

COMPONENT

3

TSSOP6,.08

50 ohm

85 Cel

12 dB

-40 Cel

3000 MHz

SMA3102-TL-H

Onsemi

WIDE BAND LOW POWER

Tin/Bismuth (Sn/Bi)

e6

NSVG3117SG6T1G

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

AEC-Q100

1

28 mA

COMPONENT

5

FL6,06,25

50 ohm

125 Cel

33.5 dB

-40 Cel

100 MHz

3000 MHz

SMA3102TL

Onsemi

WIDE BAND LOW POWER

COMPONENT

85 Cel

21.5 dB

-40 Cel

NSVG3109SG6T1G

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

AEC-Q100

1

20.5 mA

COMPONENT

3

FL6,06,25

50 ohm

85 Cel

24 dB

-40 Cel

100 MHz

3600 MHz

SMA3109TL

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

20.5 mA

COMPONENT

3

FL6,.06,25

50 ohm

RF/Microwave Amplifiers

85 Cel

21 dB

-40 Cel

SMA3006

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

5 mA

COMPONENT

3

TSSOP6,.08

50 ohm

85 Cel

14 dB

-40 Cel

2000 MHz

SMA3109

Onsemi

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

20.5 mA

COMPONENT

3

FL6,.06,25

50 ohm

RF/Microwave Amplifiers

85 Cel

21 dB

-40 Cel

NSG1001MXTAG

Onsemi

WIDE BAND LOW POWER

STB7003

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

2

2

COMPONENT

2.8

TSSOP10,.19,20

RF/Microwave Amplifiers

16 dB

IT CAN ALSO OPERATE AT 1800 TO 2000 MHZ

900 MHz

1000 MHz

STB7102

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

COMPONENT

2.7

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

16.7 dB

-30 Cel

IT CAN ALSO OPERATE AT 2040 TO 2135 MHZ

100 MHz

2500 MHz

STB7104

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

3.4 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

-30 Cel

100 MHz

2500 MHz

TSH690IDT

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

COMPONENT

2.7

SOP8,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

19 dB

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

40 MHz

1000 MHz

STB7101

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

COMPONENT

2.75

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

20.5 dB

-40 Cel

900 MHz

1900 MHz

STB7103

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

4.9 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

-30 Cel

100 MHz

2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.