WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SMA661ASTR	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1				COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	LOW NOISE	e4
SMA427ATR	STMicroelectronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	-10 dBm			COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17 dB	-65 Cel	Matte Tin (Sn)		e3	1000 MHz	2000 MHz
STB7102TR	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.3 mA	COMPONENT	2.7	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	16.7 dB	-30 Cel	TIN LEAD	IT CAN ALSO OPERATE AT 2040 TO 2135 MHZ	e0	100 MHz	2500 MHz
TSH690ID	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
934064659115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
SE5205FE	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		125 Cel	16.5 dB	-55 Cel				0 MHz	400 MHz
SA5219D,623	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BGM1011,115	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			28 dB		Tin (Sn)		e3
SE5205AN	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		125 Cel		-55 Cel				0 MHz	600 MHz
SE5212AN	NXP Semiconductors	WIDE BAND LOW POWER															125 Cel		-55 Cel		LOW NOISE		100 MHz
MRFIC0930DMR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		12 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers	70 Cel	17.5 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
NE5204AN-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	350 MHz
934056630125	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		TIN		e3	1000 MHz	2000 MHz
SA2410BE-T	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
934068532115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
SA5219D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BGD704N	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MRFIC0915T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm		2.5 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
934056629115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			20.8 dB		Pure Tin (Sn)			1000 MHz	2000 MHz
934056949115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGE887	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	22.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		470 MHz	860 MHz
BGY581	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGA6289	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		96 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)		e3	850 MHz	2500 MHz
SA5204D	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel				0 MHz	350 MHz
935056440602	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel
BGY85	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
934065665147	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT					85 Cel	4 dB	-40 Cel	Tin (Sn)		e3	40 MHz	4000 MHz
A2I09VD015GNR1	NXP Semiconductors	WIDE BAND LOW POWER																		TIN		e3
BGY685	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	17.8 dB	-20 Cel		LOW NOISE		40 MHz	600 MHz
SA5205D	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel				0 MHz	550 MHz
OM2046	NXP Semiconductors	WIDE BAND LOW POWER								1.5		MODULE			75 ohm								40 MHz	860 MHz
OM2045	NXP Semiconductors	WIDE BAND LOW POWER								1.4		MODULE						12 dB			LOW NOISE		40 MHz	860 MHz
NE5209N	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	850 MHz
NE5205D	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel	16.5 dB	0 Cel				0 MHz	550 MHz
MRFIC1501R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		7.5 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1000 MHz	2000 MHz
BGE884	NXP Semiconductors	WIDE BAND LOW POWER							16.25 dBm			MODULE			75 ohm		100 Cel		-20 Cel		LOWNOISE		40 MHz	860 MHz
934064658115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
NE5205EC	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	600 MHz
OM2052	NXP Semiconductors	WIDE BAND LOW POWER								2.1		MODULE						27 dB			LOW NOISE		40 MHz	860 MHz
935030700602	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel
NE5205N	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel	16.5 dB	0 Cel				0 MHz	550 MHz
NE5219D	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	700 MHz
BGY584	NXP Semiconductors	WIDE BAND LOW POWER							16.25 dBm			MODULE			75 ohm		100 Cel		-20 Cel		LOWNOISE		40 MHz	550 MHz
SA5219D-T	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	700 MHz
OM2050	NXP Semiconductors	WIDE BAND LOW POWER								1.9		MODULE						18 dB			LOW NOISE		40 MHz	860 MHz
BGY584A	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
SA5205N	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel				0 MHz	550 MHz
934057502135	NXP Semiconductors	WIDE BAND LOW POWER							15 dBm			COMPONENT			50 ohm			15 dB		TIN		e3	850 MHz	2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.