WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA2817	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			23.7 dB		Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
935305477118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm					NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGU8063	NXP Semiconductors	WIDE BAND LOW POWER
BGA2748	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm		8 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGA2771,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2801	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	21.5 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
MMG3015NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	12 dBm		120 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
BGA2776	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm			COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGU8052,118	NXP Semiconductors	WIDE BAND LOW POWER
BGA2002	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			16 dB		Pure Tin (Sn)	LOW NOISE		0 MHz	2200 MHz
BGA2717	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGU8L1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
BGU8063J	NXP Semiconductors	WIDE BAND LOW POWER
BGA2003	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR						COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
BGA2715	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		5.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
BGA2709,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2850	NXP Semiconductors	WIDE BAND LOW POWER							-26 dBm			COMPONENT			50 ohm		85 Cel	21.4 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
BGA2031/1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			23 dBm	3.5		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz
935309326115	NXP Semiconductors	WIDE BAND LOW POWER
BGA2711,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3		3600 MHz
BGU8052	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel		-40 Cel				1500 MHz	2500 MHz
BGU8053	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
BGU7041	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	Tin (Sn)		e3	40 MHz	1000 MHz
BGA2714	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
MMG3010NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		63 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2716	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2802,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-16.5 dBm		15.2 mA	COMPONENT	3.3	TSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	29.6 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGA2867	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			24.9 dB		TIN		e3	250 MHz	2150 MHz
BGA2712	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2869	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			30.7 dB		PURE TIN			0 MHz	2200 MHz
BGU7031	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	Tin (Sn)		e3	40 MHz	1000 MHz
BGU8051X	NXP Semiconductors	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
BGU8051	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
BGA2715,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		5.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2866	NXP Semiconductors	WIDE BAND LOW POWER							-15 dBm			COMPONENT			50 ohm		85 Cel	22.8 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGA2031/1,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz
MMG3009NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.3 dB		MATTE TIN		e3	0 MHz	6000 MHz
935313426147	NXP Semiconductors	WIDE BAND LOW POWER																		Tin (Sn)		e3
BGA2818	NXP Semiconductors	WIDE BAND LOW POWER
BGA2776T/R	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
MMG3011NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		48 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.5 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGU7003	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	Tin (Sn)		e3	40 MHz	6000 MHz
MMG3008NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		48 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2874	NXP Semiconductors	WIDE BAND LOW POWER																		Tin (Sn)		e3
BGA2816	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	24.8 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
BGA2748T/R	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGA2776,115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGU8062J	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm					NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.