WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX3537UTC	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	7.7 dB	0 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	50 MHz	878 MHz
MAX3537UTC+	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	7.7 dB	0 Cel	MATTE TIN	LOW NOISE	e3	50 MHz	878 MHz
MAX3524EUB+	Maxim Integrated	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	7.6 dB	-40 Cel	MATTE TIN		e3	44 MHz	880 MHz
MAX3558CGI	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR	4			396 mA	COMPONENT	5	LCC28,.2SQ,20	75 ohm	RF/Microwave Amplifiers	70 Cel	4 dB	0 Cel	Tin/Lead (Sn85Pb15)		e0	50 MHz	878 MHz
MAX3558CGI+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR	4			396 mA	COMPONENT	5	LCC28,.2SQ,20	75 ohm	RF/Microwave Amplifiers	70 Cel	4 dB	0 Cel	Matte Tin (Sn)		e3	50 MHz	878 MHz
MAX3537UTC+T	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	7.7 dB	0 Cel	Matte Tin (Sn)	LOW NOISE	e3	50 MHz	878 MHz
MAX3524EUB+T	Maxim Integrated	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	7.6 dB	-40 Cel	Tin (Sn)		e3	44 MHz	880 MHz
MAX3537UTC-T	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	7.7 dB	0 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	50 MHz	878 MHz
MAX3558CGI-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR	4			396 mA	COMPONENT	5	LCC28,.2SQ,20	75 ohm	RF/Microwave Amplifiers	70 Cel	4 dB	0 Cel	Tin/Lead (Sn/Pb)		e0	50 MHz	878 MHz
MAX3538UTC+T	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	9.7 dB	0 Cel	Matte Tin (Sn)	LOW NOISE	e3	50 MHz	878 MHz
MAX3558CGI+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR	4			396 mA	COMPONENT	5	LCC28,.2SQ,20	75 ohm	RF/Microwave Amplifiers	70 Cel	4 dB	0 Cel	Matte Tin (Sn)		e3	50 MHz	878 MHz
MAX3524EUB-T	Maxim Integrated	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	7.6 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	44 MHz	880 MHz
MAX2648EBT-T10	Maxim Integrated	WIDE BAND LOW POWER
MAX2691LEWS+T10	Maxim Integrated	WIDE BAND LOW POWER
MAX2473EUT+	Maxim Integrated	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel	MATTE TIN		e3	500 MHz	2500 MHz
MAX2695EWS+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	10.9 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2613ETA/V+T	Maxim Integrated	WIDE BAND LOW POWER
MAX2611EUS	Maxim Integrated	WIDE BAND LOW POWER						13 dBm	1.6		COMPONENT			50 ohm		85 Cel	17.3 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	0 MHz	1100 MHz
MAX2633EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2640AUT/V+T	Maxim Integrated	WIDE BAND LOW POWER																	MATTE TIN		e3
MAX2631EUK-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2640EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD		e0	400 MHz	1500 MHz
MAX2648PCB	Maxim Integrated	WIDE BAND LOW POWER
MAX2616ETA/V+T	Maxim Integrated	WIDE BAND LOW POWER
MAX2614ETA/V+T	Maxim Integrated	WIDE BAND LOW POWER
MAX2632EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
MAX2691LEWS+T	Maxim Integrated	WIDE BAND LOW POWER
MAX2633EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2650EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.3	24 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2648EBT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6		BIPOLAR		15 dBm		18 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	5000 MHz	6000 MHz
MAX2374EBT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm	10	10.5 mA	COMPONENT	3/5	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	750 MHz	1000 MHz
MAX2633PCB	Maxim Integrated	WIDE BAND LOW POWER
MAX2650PCB	Maxim Integrated	WIDE BAND LOW POWER						13 dBm	1.3		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	800 MHz	1000 MHz
MAX2612ETA/V+T	Maxim Integrated	WIDE BAND LOW POWER
MAX2473EUT	Maxim Integrated	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel	TIN LEAD		e0	500 MHz	2500 MHz
MAX2472EUT	Maxim Integrated	WIDE BAND LOW POWER														85 Cel		-40 Cel	TIN LEAD		e0
MAX2630EUS	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2648EBT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6		BIPOLAR		15 dBm		18 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	5000 MHz	6000 MHz
MAX2374EBT-T	Maxim Integrated	WIDE BAND LOW POWER						10 dBm	10		COMPONENT			50 ohm		85 Cel	12.5 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	750 MHz	1000 MHz
MAX2691EWS+T10	Maxim Integrated	WIDE BAND LOW POWER
MAX2631EUK	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	1000 MHz
MAX2611PCB	Maxim Integrated	WIDE BAND LOW POWER						13 dBm	1.6		COMPONENT			50 ohm		85 Cel	17.3 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	1100 MHz
MAX2632EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	1000 MHz
MAX2641EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	1400 MHz	2500 MHz
MAX2631EUK+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.