WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CGY41H	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY50E6327	Infineon Technologies	WIDE BAND LOW POWER						16 dBm			COMPONENT			50 ohm			7.5 dB					100 MHz	3000 MHz
BGA614E6327	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	17.5 dB	-65 Cel				0 MHz	2400 MHz
BGA425	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		-10 dBm		9.5 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	18.5 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	1800 MHz
BGA612E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	16.3 dB	-65 Cel	Matte Tin (Sn)		e3	0 MHz	2800 MHz
BGA416	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	8 dBm			COMPONENT	3	SOT-143R	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-65 Cel				900 MHz	1800 MHz
BGB719N7ESD	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			3.2 mA	COMPONENT	3	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers		13 dB					10 MHz	1000 MHz
CGY62E6327	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			18 dB					200 MHz	2500 MHz
CGY62	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				175 mA	COMPONENT	3/4.5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		18 dB		Tin/Lead (Sn/Pb)		e0	200 MHz	2500 MHz
CGY41P	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
BGA758L7E6327XTMA1	Infineon Technologies	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	12.5 dB	-30 Cel				5000 MHz	6000 MHz
Q-62702-G66	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			15.5 dB					800 MHz	2500 MHz
CGY41ESZZZA1	Infineon Technologies	WIDE BAND LOW POWER
BGA758L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm		9 mA	COMPONENT	3.3	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-30 Cel				5000 MHz	6000 MHz
CGY59W	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			13 dB			LOW NOISE		200 MHz	2500 MHz
T485B_LNA	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			14.5 dB			LOW NOISE		35000 MHz	40000 MHz
BGA612	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	10 dBm		80 mA	COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	16.3 dB	-65 Cel				0 MHz	2800 MHz
T485B_MPA_1	Infineon Technologies	WIDE BAND LOW POWER				GAAS				72 mA	COMPONENT	5	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers		13 dB					35000 MHz	38000 MHz
BGA318	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		5 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	12 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	1200 MHz
CGY40	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS			2	80 mA	COMPONENT	4.5	SL,4LEAD,.07SQ		RF/Microwave Amplifiers	80 Cel		-40 Cel				100 MHz	1800 MHz
BGA622	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY		1	6 dBm			COMPONENT	2.75	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	13.6 dB	-65 Cel				500 MHz	6000 MHz
SP000753504	Infineon Technologies	WIDE BAND LOW POWER
CGY121A	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					COMPONENT	-4	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16.5 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
SP000753512	Infineon Technologies	WIDE BAND LOW POWER
CGY121AE6327	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			15.5 dB					800 MHz	2500 MHz
SP000753514	Infineon Technologies	WIDE BAND LOW POWER
CGY121B	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					COMPONENT	-4	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19.5 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY121BE6327	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			19.5 dB					800 MHz	2500 MHz
T626_MPA2_W	Infineon Technologies	WIDE BAND LOW POWER				GAAS					COMPONENT	3.4,3.6	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers	95 Cel	8 dB	-40 Cel				76000 MHz	77000 MHz
BGA8U1BN6	Infineon Technologies	WIDE BAND LOW POWER
UZAMP002H6TC	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	21 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP003H6TA	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	800 MHz	2500 MHz
UZAMP002H6TA	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	21 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
UZAMP003H6TA	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	MATTE TIN		e3	800 MHz	2500 MHz
ZAMP001H6TC	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP002H6TC	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	21 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP001H6TA	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP002H6TA	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	21 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP003H6TC	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	800 MHz	2500 MHz
UZAMP001H6TA	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
UZAMP001H6TC	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
UZAMP003H6TC	Diodes Incorporated	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	MATTE TIN		e3	800 MHz	2500 MHz
MAX3524EUB	Maxim Integrated	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	7.6 dB	-40 Cel	TIN LEAD		e0	44 MHz	880 MHz
MAX3538UTC	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	9.7 dB	0 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	50 MHz	878 MHz
MAX3538UTC-T	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	9.7 dB	0 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	50 MHz	878 MHz
MAX3558CTI+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR	4			396 mA	COMPONENT	5	LCC28,.2SQ,20	75 ohm	RF/Microwave Amplifiers	70 Cel	4 dB	0 Cel	Matte Tin (Sn)		e3	50 MHz	878 MHz
MAX3538UTC+	Maxim Integrated	WIDE BAND LOW POWER						14 dBm			COMPONENT			75 ohm		85 Cel	9.7 dB	0 Cel	MATTE TIN	LOW NOISE	e3	50 MHz	878 MHz
MAX3558CTI+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR	4			396 mA	COMPONENT	5	LCC28,.2SQ,20	75 ohm	RF/Microwave Amplifiers	70 Cel	4 dB	0 Cel	MATTE TIN		e3	50 MHz	878 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.