WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2650EUS	Maxim Integrated	WIDE BAND LOW POWER						13 dBm	1.3		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel	TIN LEAD		e0	800 MHz	1000 MHz
MAX2641EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD		e0	1400 MHz	2500 MHz
MAX2473EUT+T	Maxim Integrated	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel	MATTE TIN		e3	500 MHz	2500 MHz
MAX2695EWS+	Maxim Integrated	WIDE BAND LOW POWER																	TIN SILVER COPPER NICKEL		e2
MAX2631EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz
TA4012FU	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				8.5 mA	COMPONENT	2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4012F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				8.5 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4011F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4019F	Toshiba	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	7.5 dB	-40 Cel
TA4023F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			36 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel
TA4004F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel				700 MHz
TA4002F	Toshiba	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel
TA4003F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4017FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	2			25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel				700 MHz
TA4020FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		7 mA	COMPONENT	3	SOT-143R		RF/Microwave Amplifiers	85 Cel	8.5 dB	-40 Cel				1500 MHz	2600 MHz
TA4001F	Toshiba	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel
TA4022F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			42 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
TA4011AFE	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.5 mA	COMPONENT	2	TSSOP6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel
TA4011FU	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4000F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				15 mA	COMPONENT	5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel		LOW NOISE
TA4016AFE	Toshiba	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	2800 MHz
TA4012AFE	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			8.5 mA	COMPONENT	2	TSSOP6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel
UPC1688G-T1	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
F6923AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY		2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm		85 Cel	19.5 dB	-40 Cel	TIN		e3	14000 MHz	17000 MHz
MC-7882	Renesas Electronics	WIDE BAND LOW POWER									MODULE			75 ohm		85 Cel	20 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	40 MHz	870 MHz
UPG110P-L	Renesas Electronics	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		125 Cel	10 dB	-65 Cel		HIGH RELIABILITY		2000 MHz	8000 MHz
UPC2726T-A	Renesas Electronics	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6		1400 MHz
MC-7883-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			360 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC2709TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Bismuth (Sn/Bi)		e6
UPG101B	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	GAAS		15 dBm		143 mA	COMPONENT	8,-5	QFL8,.15SQ	50 ohm	RF/Microwave Amplifiers	80 Cel	12 dB	-50 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	3000 MHz
MC-7832-AZ	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	870 MHz
UPC1678GV-E1	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		10 dBm		60 mA	COMPONENT	5	SSOP8,.2	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2000 MHz
MC-7712	Renesas Electronics	WIDE BAND LOW POWER									COMPONENT			75 ohm		85 Cel	18 dB	-30 Cel				50 MHz	770 MHz
F1129MBNELI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12			1	20 dBm	1	76 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm		115 Cel	17 dB	-40 Cel	TIN	LOW NOISE	e3	3000 MHz	4200 MHz
UPC8182TB	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		38 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel		HIGH RELIABILITY		900 MHz	2900 MHz
UPC2712T-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		15 mA	COMPONENT	5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0		2600 MHz
UPC2726T-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		0 dBm		15 mA	COMPONENT	5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	400 MHz	1600 MHz
UPC3232TB	Renesas Electronics	WIDE BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	27 dB	-40 Cel		HIGH RELIABILITY		0 MHz	50000 MHz
UPC8151TA-E3	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	100 MHz	1900 MHz
UPC2709TB	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0		2300 MHz
UPC2711TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	1000 MHz	2900 MHz
UPC3215TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		17.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel				100 MHz	2900 MHz
UPC8152TB	Renesas Electronics	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel		HIGH RELIABILITY		100 MHz	1900 MHz
UPC8231TK-E2-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		5.1 mA	COMPONENT	3	FL6,.047,20		RF/Microwave Amplifiers	85 Cel	17.5 dB	-40 Cel				1500 MHz	2400 MHz
F1429LBNELI8	Renesas Electronics	WIDE BAND LOW POWER
F0110NBTI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	22 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1500 MHz	2300 MHz
MC-7881	Renesas Electronics	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1			360 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	40 MHz	870 MHz
UPC2745TB-E3	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		0 dBm		10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel		HIGH RELIABILITY		500 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.