WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
935294012115	NXP Semiconductors	WIDE BAND LOW POWER
935294007115	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	21.6 dB	-45 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
935294006115	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
935290053115	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	24.8 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MBC13720NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm			COMPONENT	2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	12 dB	-30 Cel	TIN		e3	400 MHz	2400 MHz
MC13144D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					12 mA	COMPONENT	3	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0		2000 MHz
MC13853	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT					85 Cel	14 dB	-30 Cel				800 MHz	2400 MHz
MC13851EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
935290054115	NXP Semiconductors	WIDE BAND LOW POWER							-26 dBm			COMPONENT			50 ohm		85 Cel	21.4 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
935290049115	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	18.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
935293343118	NXP Semiconductors	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-40 Cel				500 MHz	1500 MHz
MC13820	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT					85 Cel	13 dB	-30 Cel				1000 MHz	2400 MHz
935290055115	NXP Semiconductors	WIDE BAND LOW POWER							-21 dBm			COMPONENT			50 ohm		85 Cel	28.1 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
935290056115	NXP Semiconductors	WIDE BAND LOW POWER							-15 dBm			COMPONENT			50 ohm		85 Cel	22.8 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MBC13917EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel				100 MHz	2500 MHz
MC13852EPR2	NXP Semiconductors	WIDE BAND LOW POWER
MC13821	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT					85 Cel	13 dB	-30 Cel				1000 MHz	2400 MHz
935294011115	NXP Semiconductors	WIDE BAND LOW POWER							-26 dBm			COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MC13850EPR2	NXP Semiconductors	WIDE BAND LOW POWER
MBC13916T1	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOT-343R	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
MC13850EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		12.5 mA	COMPONENT	2.7	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				400 MHz	2500 MHz
CGY888C	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID		1			300 mA	MODULE	24	SOT-115J		RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel		LOW NOISE		40 MHz	870 MHz
MC13851EPR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
935298609115	NXP Semiconductors	WIDE BAND LOW POWER
935296064115	NXP Semiconductors	WIDE BAND LOW POWER
BGA2815	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGA2717,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2802	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
BGA2031/1T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB					800 MHz	2500 MHz
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2748,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm		8 mA	COMPONENT	3	TSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGU7032,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1				COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	TIN		e3		1000 MHz
BGA2851	NXP Semiconductors	WIDE BAND LOW POWER							-26 dBm			COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	Pure Tin (Sn)	LOW NOISE		0 MHz	2200 MHz
BGA2870	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	PURE TIN	LOW NOISE		0 MHz	2200 MHz
BGU7045	NXP Semiconductors	WIDE BAND LOW POWER							20 dBm			COMPONENT			75 ohm		85 Cel	14 dB	-40 Cel	PURE TIN			40 MHz	1000 MHz
BGA2709	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
MMG38151BT1	NXP Semiconductors	WIDE BAND LOW POWER																		MATTE TIN		e3
BGU8062	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm								1500 MHz	2700 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2711	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2851,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			7.8 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGA2803,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			6.6 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		21.2 dB		TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGU7003W	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	PURE TIN			40 MHz	6000 MHz
BGU7033	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	5 dB	-10 Cel	Tin (Sn)		e3	40 MHz	1000 MHz
935363183528	NXP Semiconductors	WIDE BAND LOW POWER																		Tin (Sn)		e3
BGA2865	NXP Semiconductors	WIDE BAND LOW POWER							-21 dBm			COMPONENT			50 ohm		85 Cel	28.1 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
BGA2771	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGU7042	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	Tin (Sn)		e3	40 MHz	1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.