WIDE BAND LOW POWER RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGU7044	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.67	38 mA	COMPONENT	3.3	TSSOP6,.08	75 ohm		85 Cel	14 dB	-40 Cel	Tin (Sn)		e3	40 MHz	1000 MHz
MMG3007NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		55 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
BGU7051	NXP Semiconductors	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-40 Cel				500 MHz	1500 MHz
BGU7052	NXP Semiconductors	WIDE BAND LOW POWER
BGA2711T/R	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			13.9 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
MMG3013NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	12 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2771T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGU8L1UK	NXP Semiconductors	WIDE BAND LOW POWER
BGA2803	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	21.6 dB	-45 Cel	Pure Tin (Sn)	LOW NOISE		0 MHz	2200 MHz
BGU7032	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	Tin (Sn)		e3	40 MHz	1000 MHz
BGU8051,118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
BGA2712,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGU8053X	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
BGA420	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR			0 dBm		8 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	11 dB	-65 Cel	TIN		e3	100 MHz	1800 MHz
CGY59	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS						COMPONENT	3/5	TSOP5/6,.11,37		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	2500 MHz
T485B_VCO	Infineon Technologies	WIDE BAND LOW POWER										COMPONENT											34000 MHz	42000 MHz
BGA612-E6327	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1			80 mA		5	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA616E6327	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel	Matte Tin (Sn)		e3	0 MHz	2700 MHz
CGY41PZZZA1	Infineon Technologies	WIDE BAND LOW POWER
BGA628L7E6327XTMA1	Infineon Technologies	WIDE BAND LOW POWER							6 dBm			COMPONENT			50 ohm		150 Cel	10 dB	-65 Cel				400 MHz	6000 MHz
BGA420E6327XT	Infineon Technologies	WIDE BAND LOW POWER							0 dBm			COMPONENT			50 ohm		150 Cel	11 dB	-65 Cel	Matte Tin (Sn)		e3	100 MHz	1800 MHz
BGA420H6433	Infineon Technologies	WIDE BAND LOW POWER
BGA616	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	10 dBm		80 mA	COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17.5 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2700 MHz
BGA614	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17.5 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2400 MHz
CGY60	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					9 mA	COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		17 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	200 MHz	2500 MHz
BGA318E6327	Infineon Technologies	WIDE BAND LOW POWER							5 dBm			COMPONENT			50 ohm		150 Cel	12 dB	-65 Cel				0 MHz	1200 MHz
BGA310E6327	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		150 Cel	8 dB	-65 Cel				0 MHz	2400 MHz
BGA622E6820	Infineon Technologies	WIDE BAND LOW POWER							6 dBm			COMPONENT			50 ohm		150 Cel	13.6 dB	-65 Cel				500 MHz	6000 MHz
BGA461	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-30 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		e1
BGA416E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER							8 dBm			COMPONENT			50 ohm		150 Cel	14 dB	-65 Cel	Tin (Sn)		e3	900 MHz	1800 MHz
BGA628L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	6 dBm			COMPONENT	2.75	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	65 Cel				400 MHz	6000 MHz
CGY60E6327	Infineon Technologies	WIDE BAND LOW POWER										COMPONENT			50 ohm			13.5 dB			LOW NOISE		200 MHz	2500 MHz
BGA614E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		150 Cel	17.5 dB	-65 Cel				0 MHz	2400 MHz
BGB741L7ESD	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	BIPOLAR		1			7.2 mA	COMPONENT	3	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-55 Cel	GOLD		e4	50 MHz	5500 MHz
BGA430	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm			COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB	-65 Cel				900 MHz	2150 MHz
CGY41S	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS		1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY50	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS			16 dBm		80 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	7.5 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	100 MHz	3000 MHz
CGY41	Infineon Technologies	WIDE BAND LOW POWER							16 dBm	2		COMPONENT			50 ohm			8.5 dB					100 MHz	3000 MHz
BGA616E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel				0 MHz	2700 MHz
CGY41ES	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS		1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
BGA461E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-30 Cel
BGA312	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2000 MHz
BGA312E6327	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		150 Cel	10 dB	-65 Cel				0 MHz	2000 MHz
CGY52	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	GAAS						COMPONENT	3/4.5	SO7,.28		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	1800 MHz
BGA612E6327XT	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		150 Cel	16.3 dB	-65 Cel				0 MHz	2800 MHz
BGA622L7E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER							6 dBm			COMPONENT			50 ohm		150 Cel	16.2 dB	-65 Cel	Gold (Au)		e4	500 MHz	6000 MHz
BGA310	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	8 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2400 MHz
BGA622L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY			1	6 dBm			COMPONENT	2.75	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	16.2 dB	-65 Cel				500 MHz	6000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.