Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
HIGH RELIABILITY |
100 MHz |
2400 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
375 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1.1 |
86 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
18 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
3000 MHz |
4200 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
HIGH RELIABILITY |
200 MHz |
1500 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
93 mA |
5 |
DIP8,.3 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
100 MHz |
1900 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
75 ohm |
85 Cel |
21.5 dB |
-30 Cel |
50 MHz |
860 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
60 mA |
COMPONENT |
5 |
SSOP8,.2 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-45 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
100 MHz |
2000 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
100 MHz |
2400 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
HIGH RELIABILITY |
1500 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
125 Cel |
14 dB |
-65 Cel |
.1 MHz |
2500 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
31 mA |
COMPONENT |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
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Renesas Electronics |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
85 Cel |
25 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
40 MHz |
870 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
15 mA |
COMPONENT |
3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-25 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
800 MHz |
1500 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
7.1 mA |
COMPONENT |
3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
100 MHz |
1900 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
85 Cel |
18 dB |
-30 Cel |
TIN BISMUTH |
LOW NOISE |
e6 |
40 MHz |
870 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
375 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
0 dBm |
8 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
200 MHz |
1500 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
22 dBm |
2 |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
16 dB |
-40 Cel |
Tin (Sn) |
e3 |
1500 MHz |
2300 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-5 dBm |
22 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-40 Cel |
1000 MHz |
2200 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
200 MHz |
1500 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
GAAS |
143 mA |
8,-5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
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Renesas Electronics |
WIDE BAND LOW POWER |
-5 dBm |
COMPONENT |
85 Cel |
8.5 dB |
-40 Cel |
HIGH RELIABILITY |
1800 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
COMPONENT |
75 ohm |
100 Cel |
18 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
40 MHz |
1000 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
17 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
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Renesas Electronics |
WIDE BAND LOW POWER |
COMPONENT |
75 ohm |
85 Cel |
21.5 dB |
-30 Cel |
50 MHz |
770 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
COMPONENT |
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Renesas Electronics |
WIDE BAND LOW POWER |
COMPONENT |
75 ohm |
85 Cel |
21.5 dB |
-30 Cel |
50 MHz |
770 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
85 Cel |
18 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
40 MHz |
870 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
800 MHz |
1900 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
MATTE TIN/TIN BISMUTH |
HIGH RELIABILITY |
e3/e6 |
2600 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
85 Cel |
22 dB |
-40 Cel |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
2600 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
85 Cel |
22 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
40 MHz |
870 MHz |
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|
Renesas Electronics |
WIDE BAND LOW POWER |
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Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
100 MHz |
1900 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
HIGH RELIABILITY |
100 MHz |
2400 MHz |
|||||||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
6 mA |
COMPONENT |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
30 dB |
-40 Cel |
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Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
HIGH RELIABILITY |
100 MHz |
1900 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
100 MHz |
1900 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
85 Cel |
18 dB |
-30 Cel |
TIN BISMUTH |
e6 |
40 MHz |
870 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
23 |
PLASTIC/EPOXY |
2 |
0 dBm |
2 |
COMPONENT |
0.95 |
BGA23,5X5,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
TIN |
e3 |
17700 MHz |
21200 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
85 Cel |
22 dB |
-30 Cel |
TIN BISMUTH |
e6 |
40 MHz |
870 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
3.8 mA |
COMPONENT |
3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
100 MHz |
1900 MHz |
|||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
385 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
22.5 dB |
-30 Cel |
Tin/Bismuth (Sn/Bi) |
LOW NOISE |
e6 |
40 MHz |
1000 MHz |
||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
15 dBm |
60 mA |
COMPONENT |
+-5 |
QFL8,.15SQ |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
14 dB |
-50 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
50 MHz |
3000 MHz |
|||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
24 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
1000 MHz |
2200 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.