Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
800 MHz |
3800 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
75 ohm |
85 Cel |
12 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
960 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
0 MHz |
48000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-55 Cel |
GOLD |
LOW NOISE |
e4 |
29000 MHz |
36000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
14000 MHz |
27000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
6000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
6000 MHz |
17000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
800 MHz |
3800 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
3000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PHEMT |
1 |
20 dBm |
1.12 |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
2000 MHz |
28000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
PHEMT |
1 |
12 dBm |
55 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
1000 MHz |
11000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
52 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
220 mA |
COMPONENT |
6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
2000 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
MATTE TIN |
e3 |
200 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
PHEMT |
1 |
12 dBm |
55 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
1000 MHz |
11000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
26.5 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
4500 MHz |
7600 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
GAAS |
1 |
8 dBm |
95 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
10.2 dB |
-40 Cel |
18000 MHz |
31000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
GAAS |
1 |
5 dBm |
75 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
7000 MHz |
14000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
8600 MHz |
10200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
Matte Tin (Sn) |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
105 Cel |
9 dB |
-55 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
LCC8,.2SQ,40 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
17500 MHz |
24000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
80 mA |
5 |
LCC12,.25SQ |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
5000 MHz |
12000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
11 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
5000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
20 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
2000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
NICKEL PALLADIUM GOLD |
e4 |
|||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
Gold (Au) |
e4 |
0 MHz |
10000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
NICKEL PALLADIUM GOLD |
e4 |
|||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.6 dB |
-40 Cel |
10 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
125 Cel |
11 dB |
-55 Cel |
10 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
14 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
75 ohm |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
50 MHz |
960 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
18 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
300 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
5000 MHz |
18000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
100 mA |
8 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
17 dBm |
COMPONENT |
8 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
5/7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
|||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.67 |
COMPONENT |
3 |
LCC16,.12SQ,20 |
85 Cel |
16 dB |
-40 Cel |
4900 MHz |
5900 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
11.5 dBm |
100 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
85 Cel |
5 dB |
-40 Cel |
500 MHz |
6000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.