Infineon Technologies RF & Microwave Amplifiers 248

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

BGA615L7E6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER

10 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-30 Cel

LOW NOISE

CGY59W

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

13 dB

LOW NOISE

200 MHz

2500 MHz

CGM20G

Infineon Technologies

NARROW BAND MEDIUM POWER

15 dBm

2.4

COMPONENT

50 ohm

80 Cel

31.3 dB

IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ

880 MHz

915 MHz

PTMA080302M-30W

Infineon Technologies

WIDE BAND MEDIUM POWER

BGA427

Infineon Technologies

NARROW BAND MEDIUM POWER

PLASTIC/EPOXY

BIPOLAR

-10 dBm

9.4 mA

COMPONENT

3

SOT-343R

50 ohm

RF/Microwave Amplifiers

150 Cel

18.5 dB

-65 Cel

TIN

e3

100 MHz

1800 MHz

BGA715L7

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10 dBm

COMPONENT

1.8

SOLCC6,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

MATTE TIN

LOW NOISE

e3

PTMA180402EL

Infineon Technologies

NARROW BAND HIGH POWER

10

MODULE

50 ohm

28.5 dB

Gold (Au)

e4

1800 MHz

2000 MHz

T485B_LNA

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

14.5 dB

LOW NOISE

35000 MHz

40000 MHz

BGA612

Infineon Technologies

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

80 mA

COMPONENT

5

SOT-343R

50 ohm

RF/Microwave Amplifiers

150 Cel

16.3 dB

-65 Cel

0 MHz

2800 MHz

BGA622-E6433

Infineon Technologies

PLASTIC/EPOXY

1

2.75

SOT-343R

RF/Microwave Amplifiers

150 Cel

-65 Cel

BGA734L16

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

3

2.8

LCC16,.10SQ,20

RF/Microwave Amplifiers

85 Cel

-30 Cel

CGY0819

Infineon Technologies

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

COMPONENT

3.5

SOP16,.35,32

50 ohm

RF/Microwave Amplifiers

85 Cel

24 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

824 MHz

1910 MHz

PTMA210452FL-45W

Infineon Technologies

NARROW BAND HIGH POWER

BGA748N16

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

4

2.8

LCC16,.10SQ,20

RF/Microwave Amplifiers

85 Cel

-30 Cel

T485B_MPA_1

Infineon Technologies

WIDE BAND LOW POWER

GAAS

72 mA

COMPONENT

5

DIE OR CHIP

50 ohm

RF/Microwave Amplifiers

13 dB

35000 MHz

38000 MHz

BGA318

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

5 dBm

COMPONENT

4.7

TO-253

50 ohm

RF/Microwave Amplifiers

150 Cel

12 dB

-65 Cel

Tin/Lead (Sn/Pb)

e0

0 MHz

1200 MHz

CGY40

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

4

CERAMIC

GAAS

2

80 mA

COMPONENT

4.5

SL,4LEAD,.07SQ

RF/Microwave Amplifiers

80 Cel

-40 Cel

100 MHz

1800 MHz

BGA622

Infineon Technologies

WIDE BAND LOW POWER

PLASTIC/EPOXY

1

6 dBm

COMPONENT

2.75

SOT-343R

50 ohm

RF/Microwave Amplifiers

150 Cel

13.6 dB

-65 Cel

500 MHz

6000 MHz

PTMA210152M-20W

Infineon Technologies

NARROW BAND HIGH POWER

PTMA080302M

Infineon Technologies

WIDE BAND HIGH POWER

16 dBm

10

COMPONENT

50 ohm

31 dB

Matte Tin (Sn)

e3

700 MHz

1000 MHz

BGA9H1BN6

Infineon Technologies

NARROW BAND LOW POWER

SP000753504

Infineon Technologies

WIDE BAND LOW POWER

CGY196

Infineon Technologies

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

20 dBm

20

COMPONENT

3.3/5

TSOP8,.1,30/24

50 ohm

RF/Microwave Amplifiers

27 dB

Tin/Lead (Sn/Pb)

e0

800 MHz

3500 MHz

CGY191

Infineon Technologies

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

3.5

SOP16,.35,32

RF/Microwave Amplifiers

85 Cel

-30 Cel

Tin/Lead (Sn/Pb)

e0

SP000753506

Infineon Technologies

NARROW BAND MEDIUM POWER

CGY180E6327

Infineon Technologies

NARROW BAND LOW POWER

10 dBm

2.5

COMPONENT

50 ohm

28 dB

CGY184E6327

Infineon Technologies

NARROW BAND HIGH POWER

1.8

COMPONENT

50 ohm

40 dB

CGY121A

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

COMPONENT

-4

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16.5 dB

Tin/Lead (Sn/Pb)

e0

800 MHz

2500 MHz

SP000753512

Infineon Technologies

WIDE BAND LOW POWER

CGY121AE6327

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

15.5 dB

800 MHz

2500 MHz

CGY120

Infineon Technologies

WIDE BAND MEDIUM POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

COMPONENT

3/5

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

800 MHz

2500 MHz

SP000753514

Infineon Technologies

WIDE BAND LOW POWER

T602B_MPA_2

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

50 ohm

9.5 dB

CGY81

Infineon Technologies

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

3.5

SOP16,.35,32

RF/Microwave Amplifiers

85 Cel

-30 Cel

Tin/Lead (Sn/Pb)

e0

CGY184

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1.8

COMPONENT

3.5

SOP16,.35,32

50 ohm

RF/Microwave Amplifiers

85 Cel

40 dB

Tin/Lead (Sn/Pb)

e0

CGY191E6327

Infineon Technologies

NARROW BAND MEDIUM POWER

COMPONENT

50 ohm

85 Cel

24 dB

-30 Cel

1850 MHz

1910 MHz

CGY121B

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

COMPONENT

-4

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

19.5 dB

Tin/Lead (Sn/Pb)

e0

800 MHz

2500 MHz

CGY195E6327

Infineon Technologies

NARROW BAND MEDIUM POWER

COMPONENT

50 ohm

26 dB

CGY121BE6327

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

19.5 dB

800 MHz

2500 MHz

CGY181E6327

Infineon Technologies

NARROW BAND LOW POWER

25 dBm

1.9

COMPONENT

50 ohm

17.5 dB

T626_MPA2_W

Infineon Technologies

WIDE BAND LOW POWER

GAAS

COMPONENT

3.4,3.6

DIE OR CHIP

50 ohm

RF/Microwave Amplifiers

95 Cel

8 dB

-40 Cel

76000 MHz

77000 MHz

CGY195

Infineon Technologies

WIDE BAND MEDIUM POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

20 dBm

2

COMPONENT

3.3/5

SCT-595

50 ohm

RF/Microwave Amplifiers

24 dB

800 MHz

3000 MHz

CGY180

Infineon Technologies

NARROW BAND MEDIUM POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

GAAS

10 dBm

2.5

COMPONENT

3

SOP14(UNSPEC)

50 ohm

RF/Microwave Amplifiers

28 dB

Tin/Lead (Sn/Pb)

e0

CGY197

Infineon Technologies

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

20 dBm

20

COMPONENT

2/6

SOP8(UNSPEC)

50 ohm

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

800 MHz

35000 MHz

CGY181

Infineon Technologies

NARROW BAND MEDIUM POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

GAAS

25 dBm

1.9

COMPONENT

3/5

SOP14(UNSPEC)

50 ohm

RF/Microwave Amplifiers

20.5 dB

Tin/Lead (Sn/Pb)

e0

1750 MHz

1750 MHz

SP001071580

Infineon Technologies

NARROW BAND LOW POWER

BGA231L7-E6327

Infineon Technologies

SURFACE MOUNT

6

PLASTIC/EPOXY

1

1.8/2.8

SOLCC6,.08,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Gold (Au)

e4

BGA231N7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.