Infineon Technologies RF & Microwave Amplifiers 248

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CGY98	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS			2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
PTMA180402MV1AUMA1	Infineon Technologies	NARROW BAND HIGH POWER							10		COMPONENT			50 ohm			29.5 dB		Tin (Sn)		e3	1800 MHz	2100 MHz
BGB717L7ESDE6433XT	Infineon Technologies	NARROW BAND LOW POWER									COMPONENT			50 ohm			10 dB					76 MHz	108 MHz
BGA427E6327XT	Infineon Technologies	NARROW BAND MEDIUM POWER
PMB4819	Infineon Technologies		SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR				480 mA		3/4.5	TSSOP10,.19,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
PTMA210152MV1AUMA1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			27.5 dB					1800 MHz	2200 MHz
PTMA210152M	Infineon Technologies	NARROW BAND HIGH POWER						15 dBm	10		COMPONENT			50 ohm			27.5 dB		MATTE TIN		e3	1800 MHz	2200 MHz
BGA125N6	Infineon Technologies	NARROW BAND LOW POWER
CGY50	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS		16 dBm		80 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	7.5 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	100 MHz	3000 MHz
CGY41	Infineon Technologies	WIDE BAND LOW POWER						16 dBm	2		COMPONENT			50 ohm			8.5 dB					100 MHz	3000 MHz
BGA616E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel				0 MHz	2700 MHz
CGY41ES	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
BGA427-E6433	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR	1			9.4 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
PTMA080152MV1R500AUMA1	Infineon Technologies	WIDE BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			29 dB					700 MHz	1000 MHz
BGA461-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.8	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-30 Cel
BGA461E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-30 Cel
BGA615L7	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm		.003 mA	COMPONENT	2.8	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-30 Cel		LOW NOISE
BGA312	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2000 MHz
CGY93P	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		20 dBm	2.2		COMPONENT	3.5	SOP16,.35,32		RF/Microwave Amplifiers		29 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
BGA711L7	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	7	PLASTIC/EPOXY		1	4 dBm			COMPONENT	2.8	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	85 Cel	16.7 dB	-30 Cel		LOW NOISE		2110 MHz	2155 MHz
BGA312E6327	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	10 dB	-65 Cel				0 MHz	2000 MHz
PTMA210452FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
CGY52	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	GAAS					COMPONENT	3/4.5	SO7,.28		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	200 MHz	1800 MHz
BGA751L7	Infineon Technologies	NARROW BAND LOW POWER						4 dBm			COMPONENT			50 ohm		85 Cel	15.8 dB	-30 Cel		LOW NOISE		875 MHz	885 MHz
BGA612-E6433	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR	1					5	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
BGA748N16E6327	Infineon Technologies	NARROW BAND LOW POWER						4 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-30 Cel		LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ		2110 MHz	2170 MHz
BGA612E6327XT	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	16.3 dB	-65 Cel				0 MHz	2800 MHz
PTMA210452FL	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1	25 dBm	10		MODULE	28	MODULE,8LEAD,.6	50 ohm	RF/Microwave Amplifiers		26.5 dB		Gold (Au)		e4	1900 MHz	2200 MHz
BGA420E6327	Infineon Technologies	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	0 dBm		8 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	11 dB	-65 Cel	Matte Tin (Sn)		e3	100 MHz	1800 MHz
BGA622L7E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						6 dBm			COMPONENT			50 ohm		150 Cel	16.2 dB	-65 Cel	Gold (Au)		e4	500 MHz	6000 MHz
BGA310	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		10 dBm			COMPONENT	4.7	TO-253	50 ohm	RF/Microwave Amplifiers	150 Cel	8 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	2400 MHz
BGA736L16	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		3	4 dBm			COMPONENT	2.8	LCC16,.10SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	3 dB	-30 Cel		LOW NOISE		869 MHz	894 MHz
CGB191	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			5		COMPONENT	3.7	LCC24,.17X.14,20	50 ohm	RF/Microwave Amplifiers	110 Cel	24 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1850 MHz	1910 MHz
PTMA210452ELV1	Infineon Technologies	NARROW BAND HIGH POWER			CERAMIC		1					28	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
PTMA080304M-2X15W	Infineon Technologies	WIDE BAND HIGH POWER
PTMA180402FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
PTMA210452ELV1R250	Infineon Technologies	NARROW BAND HIGH POWER
BGA925L6E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	15.8 dB	-40 Cel	Gold (Au)		e4	1550 MHz	1615 MHz
BGA915N7	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm		5.7 mA	COMPONENT	2.8	SOLCC6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.3 dB	-40 Cel				1550 MHz	1615 MHz
PTMA180402MV1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1		10		COMPONENT	28	SOP20,.56	50 ohm	RF/Microwave Amplifiers		29.5 dB					1800 MHz	2100 MHz
BGA524N6	Infineon Technologies	NARROW BAND LOW POWER																	TIN		e3
BGA715N7	Infineon Technologies	NARROW BAND LOW POWER																	TIN		e3
BGA700L16	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	10 dBm		24 mA	COMPONENT	3.2	LCC16,.1SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-30 Cel		LOW NOISE		2400 MHz	2500 MHz
BGA622L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY		1	6 dBm			COMPONENT	2.75	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	16.2 dB	-65 Cel				500 MHz	6000 MHz
PTMA210452EL	Infineon Technologies	NARROW BAND HIGH POWER			CERAMIC		1	25 dBm	10		MODULE	28	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers		26.5 dB		Gold (Au)		e4	1900 MHz	2200 MHz
PMB2362V1.1	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR			1.5		COMPONENT	3/3.3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
CGY21	Infineon Technologies			4	METAL	BIPOLAR				200 mA		4.5	CAN4,.2		RF/Microwave Amplifiers	150 Cel			Tin/Lead (Sn/Pb)		e0
CGY41H	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.