Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
TIN |
e3 |
1550 MHz |
1615 MHz |
|||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
18 dB |
-65 Cel |
TIN |
e3 |
0 MHz |
2700 MHz |
|||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
1550 MHz |
1615 MHz |
||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
150 Cel |
11 dB |
-65 Cel |
TIN |
e3 |
100 MHz |
1800 MHz |
|||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
17.5 dB |
-65 Cel |
TIN |
e3 |
0 MHz |
2400 MHz |
|||||||||||||||
|
Infineon Technologies |
NARROW BAND MEDIUM POWER |
-10 dBm |
COMPONENT |
50 ohm |
150 Cel |
18.5 dB |
-65 Cel |
TIN |
e3 |
100 MHz |
1800 MHz |
|||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
150 Cel |
13.6 dB |
-65 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
|||||||||||||||
|
Infineon Technologies |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
7.2 mA |
3 |
LCC7(UNSPEC) |
RF/Microwave Amplifiers |
Gold (Au) |
e4 |
|||||||||||||||
|
Infineon Technologies |
WIDE BAND HIGH POWER |
42 dBm |
10 |
COMPONENT |
50 ohm |
29 dB |
Tin (Sn) |
e3 |
700 MHz |
1000 MHz |
||||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
16.3 dB |
-65 Cel |
Tin (Sn) |
e3 |
0 MHz |
2800 MHz |
|||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
1550 MHz |
1615 MHz |
|||||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Tin (Sn) |
e3 |
1550 MHz |
1615 MHz |
|||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
13 dB |
10 MHz |
1000 MHz |
||||||||||||||||||||
|
Infineon Technologies |
NARROW BAND HIGH POWER |
25 dBm |
10 |
MODULE |
50 ohm |
26.5 dB |
1900 MHz |
2200 MHz |
||||||||||||||||||
Infineon Technologies |
WIDE BAND HIGH POWER |
||||||||||||||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
LOW NOISE |
1550 MHz |
1615 MHz |
||||||||||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
||||||||||||||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
0 dBm |
8 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
11 dB |
-65 Cel |
TIN |
e3 |
100 MHz |
1800 MHz |
|||||||||
Infineon Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
3/5 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
200 MHz |
2500 MHz |
||||||||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
||||||||||||||||||||||||||
Infineon Technologies |
WIDE BAND MEDIUM POWER |
COMPONENT |
22 dB |
17000 MHz |
24000 MHz |
||||||||||||||||||||||
|
Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
15 dBm |
10 |
COMPONENT |
28 |
SOP20,.56 |
50 ohm |
27.5 dB |
1800 MHz |
2200 MHz |
||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
|||||||||||||||||||||||||
Infineon Technologies |
WIDE BAND HIGH POWER |
20 dBm |
10 |
COMPONENT |
26 dB |
GOLD |
e4 |
1800 MHz |
2200 MHz |
||||||||||||||||||
Infineon Technologies |
WIDE BAND LOW POWER |
COMPONENT |
34000 MHz |
42000 MHz |
|||||||||||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
80 mA |
5 |
SOT-343R |
RF/Microwave Amplifiers |
150 Cel |
-65 Cel |
||||||||||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
||||||||||||||||||||||||||
Infineon Technologies |
4 |
METAL |
GAAS |
200 mA |
4.5 |
CAN4,.2 |
RF/Microwave Amplifiers |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
1.5 |
COMPONENT |
50 ohm |
23 dB |
1930 MHz |
1990 MHz |
||||||||||||||||||||
Infineon Technologies |
NARROW BAND LOW POWER |
||||||||||||||||||||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
||||||||||||||||||||||||||
Infineon Technologies |
NARROW BAND LOW POWER |
||||||||||||||||||||||||||
Infineon Technologies |
WIDE BAND HIGH POWER |
16 dBm |
COMPONENT |
50 ohm |
31 dB |
700 MHz |
1000 MHz |
||||||||||||||||||||
|
Infineon Technologies |
PLASTIC/EPOXY |
1 |
2.75 |
SOT-343R |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
|||||||||||||||||||
|
Infineon Technologies |
PLASTIC/EPOXY |
1 |
6 |
SOT-343R |
RF/Microwave Amplifiers |
150 Cel |
-65 Cel |
|||||||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
1 |
COMPONENT |
2.78 |
LCC7(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
2.2 dB |
-35 Cel |
Matte Tin (Sn) |
e3 |
|||||||||||
Infineon Technologies |
NARROW BAND LOW POWER |
COMPONENT |
85 Cel |
-30 Cel |
AMPLIFIER WITH MIXER |
1100 MHz |
|||||||||||||||||||||
|
Infineon Technologies |
NARROW BAND HIGH POWER |
CERAMIC |
1 |
28 |
FLNG,.59"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||
Infineon Technologies |
NARROW BAND LOW POWER |
14.5 dB |
900 MHz |
1800 MHz |
|||||||||||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
18 dB |
-65 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
2700 MHz |
|||||||||||||||
Infineon Technologies |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Infineon Technologies |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 mA |
3 |
SOT-343R |
RF/Microwave Amplifiers |
150 Cel |
-65 Cel |
|||||||||||||||||
Infineon Technologies |
NARROW BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
||||||||||||||||||||
Infineon Technologies |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
150 Cel |
10 dB |
-65 Cel |
400 MHz |
6000 MHz |
||||||||||||||||||
Infineon Technologies |
WIDE BAND HIGH POWER |
||||||||||||||||||||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
||||||||||||||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
150 Cel |
11 dB |
-65 Cel |
Matte Tin (Sn) |
e3 |
100 MHz |
1800 MHz |
|||||||||||||||
|
Infineon Technologies |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
8 dBm |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.