Infineon Technologies RF & Microwave Amplifiers 248

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

BGA824N6E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

17 dB

-40 Cel

TIN

e3

1550 MHz

1615 MHz

BGA616H6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

18 dB

-65 Cel

TIN

e3

0 MHz

2700 MHz

BGA715N7E6327XTSA2

Infineon Technologies

NARROW BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

TIN

LOW NOISE

e3

1550 MHz

1615 MHz

BGA420H6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

150 Cel

11 dB

-65 Cel

TIN

e3

100 MHz

1800 MHz

BGA614H6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

17.5 dB

-65 Cel

TIN

e3

0 MHz

2400 MHz

BGA427H6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER

-10 dBm

COMPONENT

50 ohm

150 Cel

18.5 dB

-65 Cel

TIN

e3

100 MHz

1800 MHz

BGA622H6820XTSA1

Infineon Technologies

WIDE BAND LOW POWER

6 dBm

COMPONENT

50 ohm

150 Cel

13.6 dB

-65 Cel

Matte Tin (Sn)

e3

500 MHz

6000 MHz

BGB741L7ESD-E6327

Infineon Technologies

SURFACE MOUNT

7

PLASTIC/EPOXY

BIPOLAR

1

7.2 mA

3

LCC7(UNSPEC)

RF/Microwave Amplifiers

Gold (Au)

e4

PTMA080152MV1AUMA1

Infineon Technologies

WIDE BAND HIGH POWER

42 dBm

10

COMPONENT

50 ohm

29 dB

Tin (Sn)

e3

700 MHz

1000 MHz

BGA612H6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

16.3 dB

-65 Cel

Tin (Sn)

e3

0 MHz

2800 MHz

BGA231N7E6330XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

BGA231N7E6327XTSA2

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

Tin (Sn)

e3

1550 MHz

1615 MHz

BGB719N7ESDE6327XTMA1

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

13 dB

10 MHz

1000 MHz

PTMA210452ELV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER

25 dBm

10

MODULE

50 ohm

26.5 dB

1900 MHz

2200 MHz

PTMA080304MV1

Infineon Technologies

WIDE BAND HIGH POWER

BGA715N7E6327

Infineon Technologies

NARROW BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

LOW NOISE

1550 MHz

1615 MHz

PTMA180402M-40W

Infineon Technologies

NARROW BAND HIGH POWER

BGA420

Infineon Technologies

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

0 dBm

8 mA

COMPONENT

3

SOT-343R

50 ohm

RF/Microwave Amplifiers

150 Cel

11 dB

-65 Cel

TIN

e3

100 MHz

1800 MHz

CGY59

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

COMPONENT

3/5

TSOP5/6,.11,37

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

200 MHz

2500 MHz

PTMA180402FL-40W

Infineon Technologies

NARROW BAND HIGH POWER

T458B_PA

Infineon Technologies

WIDE BAND MEDIUM POWER

COMPONENT

22 dB

17000 MHz

24000 MHz

PTMA210152MV1R500AUMA1

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

15 dBm

10

COMPONENT

28

SOP20,.56

50 ohm

27.5 dB

1800 MHz

2200 MHz

BGA123N6

Infineon Technologies

NARROW BAND LOW POWER

PTMA210404FLV1R250

Infineon Technologies

WIDE BAND HIGH POWER

20 dBm

10

COMPONENT

26 dB

GOLD

e4

1800 MHz

2200 MHz

T485B_VCO

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

34000 MHz

42000 MHz

BGA612-E6327

Infineon Technologies

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

80 mA

5

SOT-343R

RF/Microwave Amplifiers

150 Cel

-65 Cel

PTMC210404MDV1R5XUMA1

Infineon Technologies

NARROW BAND HIGH POWER

CGY31

Infineon Technologies

4

METAL

GAAS

200 mA

4.5

CAN4,.2

RF/Microwave Amplifiers

150 Cel

Tin/Lead (Sn/Pb)

e0

PTH32003

Infineon Technologies

NARROW BAND HIGH POWER

1.5

COMPONENT

50 ohm

23 dB

1930 MHz

1990 MHz

BGA734L16E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

PTMA180402ELV1R50

Infineon Technologies

NARROW BAND HIGH POWER

BGA715N7E6330

Infineon Technologies

NARROW BAND LOW POWER

PTMA080302MV1AUMA1

Infineon Technologies

WIDE BAND HIGH POWER

16 dBm

COMPONENT

50 ohm

31 dB

700 MHz

1000 MHz

BGA622-E6327

Infineon Technologies

PLASTIC/EPOXY

1

2.75

SOT-343R

RF/Microwave Amplifiers

85 Cel

-30 Cel

BGA616-E6433

Infineon Technologies

PLASTIC/EPOXY

1

6

SOT-343R

RF/Microwave Amplifiers

150 Cel

-65 Cel

BGA619

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

7

PLASTIC/EPOXY

1

COMPONENT

2.78

LCC7(UNSPEC)

50 ohm

RF/Microwave Amplifiers

85 Cel

2.2 dB

-35 Cel

Matte Tin (Sn)

e3

PMB2332-R

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

85 Cel

-30 Cel

AMPLIFIER WITH MIXER

1100 MHz

PTMA180402ELV1

Infineon Technologies

NARROW BAND HIGH POWER

CERAMIC

1

28

FLNG,.59"H.SPACE

RF/Microwave Amplifiers

BGC420

Infineon Technologies

NARROW BAND LOW POWER

14.5 dB

900 MHz

1800 MHz

BGA616E6327

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

18 dB

-65 Cel

Matte Tin (Sn)

e3

0 MHz

2700 MHz

CGY41PZZZA1

Infineon Technologies

WIDE BAND LOW POWER

BGA420H6327

Infineon Technologies

PLASTIC/EPOXY

BIPOLAR

1

8 mA

3

SOT-343R

RF/Microwave Amplifiers

150 Cel

-65 Cel

BGA428E6327HTSA1

Infineon Technologies

NARROW BAND LOW POWER

8 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

BGA628L7E6327XTMA1

Infineon Technologies

WIDE BAND LOW POWER

6 dBm

COMPONENT

50 ohm

150 Cel

10 dB

-65 Cel

400 MHz

6000 MHz

PTMA080152M-20W

Infineon Technologies

WIDE BAND HIGH POWER

PTMA210452FLV1R250

Infineon Technologies

NARROW BAND HIGH POWER

BGA420E6327XT

Infineon Technologies

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

150 Cel

11 dB

-65 Cel

Matte Tin (Sn)

e3

100 MHz

1800 MHz

BGA428

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

8 dBm

COMPONENT

2.7

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.