Infineon Technologies RF & Microwave Amplifiers 248

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA420H6433	Infineon Technologies	WIDE BAND LOW POWER
BGA616	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	10 dBm		80 mA	COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17.5 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2700 MHz
CGY96	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			3		COMPONENT	3.5	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		32.5 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
BGA715L7E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel		LOW NOISE
27-31GHZHPA	Infineon Technologies	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm								27000 MHz	31000 MHz
BGA614	Infineon Technologies	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	SOT-343R	50 ohm	RF/Microwave Amplifiers	150 Cel	17.5 dB	-65 Cel	Tin (Sn)		e3	0 MHz	2400 MHz
BGA420-E6433	Infineon Technologies				PLASTIC/EPOXY	BIPOLAR	1			8 mA		3	SOT-343R		RF/Microwave Amplifiers	150 Cel		-65 Cel
PTH31042	Infineon Technologies	NARROW BAND HIGH POWER							1.5		COMPONENT			50 ohm		90 Cel	11 dB					1930 MHz	1990 MHz
PTMA080302MV1R250AUMA1	Infineon Technologies	WIDE BAND MEDIUM POWER
PTMA080152MV1AUMA1/SAMPLE	Infineon Technologies	WIDE BAND HIGH POWER
BGA925L6	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm			COMPONENT	1.8	SOLCC6,.03,16	50 ohm	RF/Microwave Amplifiers	85 Cel	15.8 dB	-40 Cel				1550 MHz	1615 MHz
CGY60	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				9 mA	COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers		17 dB		Tin/Lead (Sn/Pb)	LOW NOISE	e0	200 MHz	2500 MHz
PTMA210152MV1R500AUMA1/SAMPLE	Infineon Technologies	NARROW BAND HIGH POWER
BGA318E6327	Infineon Technologies	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		150 Cel	12 dB	-65 Cel				0 MHz	1200 MHz
PTMA080152M	Infineon Technologies	WIDE BAND HIGH POWER						42 dBm	10		COMPONENT			50 ohm			29 dB		Matte Tin (Sn)		e3	700 MHz	1000 MHz
BGA725L6	Infineon Technologies	NARROW BAND LOW POWER																	GOLD		e4
CGY93	Infineon Technologies	NARROW BAND MEDIUM POWER						20 dBm	2.2		COMPONENT						20.5 dB					880 MHz	915 MHz
CGB91	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			5		COMPONENT	3.7	LCC24,.17X.14,20	50 ohm	RF/Microwave Amplifiers	110 Cel	25 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
PTMA180402EL-40W	Infineon Technologies	NARROW BAND HIGH POWER
BGA310E6327	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	8 dB	-65 Cel				0 MHz	2400 MHz
PTMA210452EL-45W	Infineon Technologies	NARROW BAND HIGH POWER
BGA622E6820	Infineon Technologies	WIDE BAND LOW POWER						6 dBm			COMPONENT			50 ohm		150 Cel	13.6 dB	-65 Cel				500 MHz	6000 MHz
PTMA080304M	Infineon Technologies	NARROW BAND HIGH POWER						11.5 dBm	10		COMPONENT			50 ohm			29.5 dB		MATTE TIN		e3	700 MHz	1000 MHz
PTMA080302MV1	Infineon Technologies	WIDE BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	16 dBm			COMPONENT	28	SOP20,.56	50 ohm	RF/Microwave Amplifiers		31 dB					700 MHz	1000 MHz
BGA461	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-30 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		e1
BGA748L16E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						4 dBm			COMPONENT			50 ohm		85 Cel	16.8 dB	-30 Cel	Gold (Au)	LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ	e4	869 MHz	894 MHz
BGA416E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						8 dBm			COMPONENT			50 ohm		150 Cel	14 dB	-65 Cel	Tin (Sn)		e3	900 MHz	1800 MHz
BGA628L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	6 dBm			COMPONENT	2.75	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	65 Cel				400 MHz	6000 MHz
CGY99	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	10		GAAS			2		COMPONENT	2.7/6	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers		30 dB		Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
CGY60E6327	Infineon Technologies	WIDE BAND LOW POWER									COMPONENT			50 ohm			13.5 dB			LOW NOISE		200 MHz	2500 MHz
BGA728L7	Infineon Technologies		SURFACE MOUNT	7	PLASTIC/EPOXY		1					2.8	LCC7(UNSPEC)		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGA614E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	17.5 dB	-65 Cel				0 MHz	2400 MHz
BGB741L7ESD	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1			7.2 mA	COMPONENT	3	LCC7(UNSPEC)	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB	-55 Cel	GOLD		e4	50 MHz	5500 MHz
BGA430	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB	-65 Cel				900 MHz	2150 MHz
BGA748L16	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		4	4 dBm		.002 mA	COMPONENT	2.8	LCC16,.10SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.8 dB	-30 Cel		LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ		869 MHz	894 MHz
CGY0918	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS					COMPONENT	3.5,-5	SOP16,.35,32		RF/Microwave Amplifiers		28 dB		Tin/Lead (Sn/Pb)		e0	880 MHz	1785 MHz
BGA428-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
CGY353	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		17 dBm			COMPONENT	7	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		21 dB		Tin/Lead (Sn/Pb)		e0	3425 MHz	3450 MHz
BGA420E6327HTSA1	Infineon Technologies	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		150 Cel	11 dB	-65 Cel	MATTE TIN		e3	100 MHz	1800 MHz
PTH32001	Infineon Technologies	NARROW BAND LOW POWER							5		MODULE			50 ohm		85 Cel	23 dB	-20 Cel				1930 MHz	1990 MHz
PTMA180402M	Infineon Technologies	NARROW BAND HIGH POWER							3		COMPONENT			50 ohm			29.5 dB		Matte Tin (Sn)		e3	1800 MHz	2000 MHz
PTH32002	Infineon Technologies	NARROW BAND HIGH POWER							1.5		MODULE			50 ohm		85 Cel	26 dB	-20 Cel				1805 MHz	1880 MHz
PTMA180402FLV1XWSA1	Infineon Technologies	NARROW BAND HIGH POWER
BGB717L7ESDE6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER									COMPONENT			50 ohm			10 dB					76 MHz	108 MHz
BGA713L7-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.8	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-30 Cel	Gold (Au)		e4
PTMA210404FLV1	Infineon Technologies	WIDE BAND HIGH POWER						20 dBm	10		COMPONENT						26 dB		GOLD		e4	1800 MHz	2200 MHz
PTMA210152MV1	Infineon Technologies	NARROW BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm	RF/Microwave Amplifiers		27.5 dB					1800 MHz	2200 MHz
CGY41S	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.