Infineon Technologies RF & Microwave Amplifiers 248

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

BGA427E6327

Infineon Technologies

NARROW BAND MEDIUM POWER

PLASTIC/EPOXY

BIPOLAR

1

-10 dBm

9.4 mA

COMPONENT

3

SOT-343R

50 ohm

RF/Microwave Amplifiers

150 Cel

28.5 dB

-65 Cel

Matte Tin (Sn)

e3

100 MHz

1800 MHz

BGA428H6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

8 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

PTMA210452FLV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER

25 dBm

10

MODULE

50 ohm

26.5 dB

1900 MHz

2200 MHz

T485B_MPA_2

Infineon Technologies

WIDE BAND MEDIUM POWER

COMPONENT

50 ohm

12 dB

35000 MHz

38000 MHz

PTMA180152M

Infineon Technologies

NARROW BAND HIGH POWER

42 dBm

3

COMPONENT

50 ohm

30 dB

1800 MHz

2000 MHz

PTMA080152MV1

Infineon Technologies

WIDE BAND HIGH POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

28

SOP20,.56

RF/Microwave Amplifiers

PTMA180402ELV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER

CGY94

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

GAAS

2

COMPONENT

3/5

SOP14(UNSPEC)

50 ohm

RF/Microwave Amplifiers

27 dB

Tin/Lead (Sn/Pb)

e0

PTMC210124MDV1R5XUMA1

Infineon Technologies

NARROW BAND HIGH POWER

CGY50E6327

Infineon Technologies

WIDE BAND LOW POWER

16 dBm

COMPONENT

50 ohm

7.5 dB

100 MHz

3000 MHz

CGY96E6327

Infineon Technologies

NARROW BAND HIGH POWER

1.7

COMPONENT

50 ohm

BGA428-E6433

Infineon Technologies

SURFACE MOUNT

6

PLASTIC/EPOXY

1

2.7

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

BGC405

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

50 ohm

150 Cel

16.5 dB

-65 Cel

900 MHz

1800 MHz

BGA614E6327

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

17.5 dB

-65 Cel

0 MHz

2400 MHz

BGA425

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

-10 dBm

9.5 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

150 Cel

18.5 dB

-65 Cel

Tin/Lead (Sn/Pb)

e0

100 MHz

1800 MHz

CGY63

Infineon Technologies

WIDE BAND MEDIUM POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

15 dBm

2

COMPONENT

3/5

SCT-595

50 ohm

RF/Microwave Amplifiers

20 dB

Tin/Lead (Sn/Pb)

e0

800 MHz

2500 MHz

BGA612E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

16.3 dB

-65 Cel

Matte Tin (Sn)

e3

0 MHz

2800 MHz

BGA416

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

8 dBm

COMPONENT

3

SOT-143R

50 ohm

RF/Microwave Amplifiers

150 Cel

14 dB

-65 Cel

900 MHz

1800 MHz

BGB719N7ESD

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

3.2 mA

COMPONENT

3

SOLCC6,.05,20

50 ohm

RF/Microwave Amplifiers

13 dB

10 MHz

1000 MHz

PTMA180402FLV1R50

Infineon Technologies

NARROW BAND HIGH POWER

CGY62E6327

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

18 dB

200 MHz

2500 MHz

PTH31002

Infineon Technologies

NARROW BAND HIGH POWER

1.5

MODULE

50 ohm

12 dB

1930 MHz

1990 MHz

CGB240

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

GAAS

1

10 dBm

6

150 mA

COMPONENT

2/6

TSSOP10,.19,20

50 ohm

RF/Microwave Amplifiers

23 dB

2400 MHz

2500 MHz

BGA427E6327HTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER

-10 dBm

COMPONENT

50 ohm

150 Cel

28.5 dB

-65 Cel

MATTE TIN

e3

100 MHz

1800 MHz

BGA736L16E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

3 dB

-30 Cel

LOW NOISE

869 MHz

894 MHz

BGA751L7-E6327

Infineon Technologies

SURFACE MOUNT

6

PLASTIC/EPOXY

1

2.8

SOLCC6,.08,20

RF/Microwave Amplifiers

85 Cel

-30 Cel

Gold (Au)

e4

BGA425E6327

Infineon Technologies

NARROW BAND LOW POWER

-10 dBm

COMPONENT

50 ohm

150 Cel

18.5 dB

-65 Cel

100 MHz

1800 MHz

CGY62

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

175 mA

COMPONENT

3/4.5

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

18 dB

Tin/Lead (Sn/Pb)

e0

200 MHz

2500 MHz

BGA622L7-E6327

Infineon Technologies

SURFACE MOUNT

7

PLASTIC/EPOXY

1

2.75

LCC7(UNSPEC)

RF/Microwave Amplifiers

150 Cel

-65 Cel

CGY41P

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

4

CERAMIC

GAAS

1

16 dBm

2

80 mA

COMPONENT

3.3/5

SL,4LEAD,.07SQ

50 ohm

RF/Microwave Amplifiers

8.5 dB

100 MHz

3000 MHz

BGA758L7E6327XTMA1

Infineon Technologies

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

12.5 dB

-30 Cel

5000 MHz

6000 MHz

CGM1900C

Infineon Technologies

NARROW BAND MEDIUM POWER

7

CERAMIC

GAAS

5

COMPONENT

3.7

MODULE,7LEAD,.23

50 ohm

RF/Microwave Amplifiers

110 Cel

20 dB

-30 Cel

1850 MHz

1910 MHz

BGA715N7E6330XTSA1

Infineon Technologies

NARROW BAND LOW POWER

PTMA210152MV1R500

Infineon Technologies

NARROW BAND HIGH POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

15 dBm

10

COMPONENT

28

SOP20,.56

50 ohm

27.5 dB

1800 MHz

2200 MHz

PTMA080152MV1R500

Infineon Technologies

WIDE BAND HIGH POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

1

15 dBm

10

COMPONENT

28

SOP20,.56

50 ohm

29 dB

700 MHz

1000 MHz

BGA711L7E6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER

4 dBm

COMPONENT

50 ohm

85 Cel

16.7 dB

-30 Cel

LOW NOISE

2110 MHz

2155 MHz

Q-62702-G66

Infineon Technologies

WIDE BAND LOW POWER

COMPONENT

50 ohm

15.5 dB

800 MHz

2500 MHz

BGA9C1MN9

Infineon Technologies

NARROW BAND LOW POWER

PTMA180402FL

Infineon Technologies

NARROW BAND HIGH POWER

10

MODULE

50 ohm

28.5 dB

Gold (Au)

e4

1800 MHz

2000 MHz

CGY94E6327

Infineon Technologies

NARROW BAND LOW POWER

2

COMPONENT

50 ohm

27 dB

BGB717L7ESD

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

3.6 mA

COMPONENT

3

SOLCC6,.08,20

50 ohm

RF/Microwave Amplifiers

10 dB

76 MHz

108 MHz

BGA751L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

15.8 dB

-30 Cel

LOW NOISE

875 MHz

885 MHz

BGA622GPS

Infineon Technologies

PLASTIC/EPOXY

1

3

SOT-343R

RF/Microwave Amplifiers

CGM800C

Infineon Technologies

NARROW BAND MEDIUM POWER

7

CERAMIC

GAAS

5

COMPONENT

3.7

MODULE,7LEAD,.23

50 ohm

RF/Microwave Amplifiers

110 Cel

20 dB

-30 Cel

824 MHz

849 MHz

CGY41ESZZZA1

Infineon Technologies

WIDE BAND LOW POWER

BGA758L7

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

9 mA

COMPONENT

3.3

SOLCC6,.05,20

50 ohm

RF/Microwave Amplifiers

85 Cel

12.5 dB

-30 Cel

5000 MHz

6000 MHz

PTMA080304MV1AUMA1

Infineon Technologies

WIDE BAND HIGH POWER

BGA915N7E6327XTMA1

Infineon Technologies

NARROW BAND LOW POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.