Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Toshiba |
NARROW BAND HIGH POWER |
5 |
PLASTIC/EPOXY |
HYBRID |
3.6 |
MODULE,5LEAD,.53 |
RF/Microwave Amplifiers |
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Toshiba |
PLASTIC/EPOXY |
1 |
12.5 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
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Toshiba |
NARROW BAND LOW POWER |
824 MHz |
851 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
20 dBm |
3 |
MODULE |
50 ohm |
100 Cel |
30.7 dB |
-30 Cel |
400 MHz |
470 MHz |
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Toshiba |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
28 dB |
-30 Cel |
450 MHz |
520 MHz |
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Toshiba |
WIDE BAND HIGH POWER |
24 dBm |
2 |
50 ohm |
100 Cel |
-30 Cel |
400 MHz |
440 MHz |
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Toshiba |
PLASTIC/EPOXY |
HYBRID |
5,7.5 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
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Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
8.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Toshiba |
WIDE BAND HIGH POWER |
24 dBm |
2 |
50 ohm |
100 Cel |
-30 Cel |
440 MHz |
480 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
24.77 dBm |
2 |
50 ohm |
100 Cel |
19.2 dB |
-30 Cel |
430 MHz |
450 MHz |
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Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1500 mA |
9 |
FL6,.4,100 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
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Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Toshiba |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
7.5 dB |
-40 Cel |
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Toshiba |
NARROW BAND LOW POWER |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
1895 MHz |
1918 MHz |
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Toshiba |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
36 mA |
COMPONENT |
5 |
TSSOP8,.16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
134 MHz |
174 MHz |
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Toshiba |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
14 mA |
COMPONENT |
2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
17 dBm |
20 |
MODULE |
9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
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Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
350 mA |
6 |
FL6,.4,100 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
490 MHz |
512 MHz |
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Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
CERAMIC |
HYBRID |
12.3 dBm |
20 |
MODULE |
6 |
LCC5(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
Tin/Lead (Sn/Pb) |
e0 |
824 MHz |
849 MHz |
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Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
12 dBm |
3 |
390 mA |
COMPONENT |
5.5,5.8 |
SMSIP5/6H,.5 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
824 MHz |
849 MHz |
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Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
700 MHz |
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Toshiba |
PLASTIC/EPOXY |
HYBRID |
12.5 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
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|
Toshiba |
NARROW BAND MEDIUM POWER |
-3 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
27.5 dB |
-40 Cel |
1880 MHz |
1920 MHz |
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Toshiba |
NARROW BAND LOW POWER |
925 MHz |
940 MHz |
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Toshiba |
NARROW BAND LOW POWER |
METAL |
GAAS |
1 |
300 mA |
7,-5 |
FLNG,.53"H.SPACE |
RF/Microwave Amplifiers |
90 Cel |
-40 Cel |
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Toshiba |
NARROW BAND MEDIUM POWER |
METAL |
1 |
20 dBm |
1200 mA |
COMPONENT |
7 |
FLNG,.53"H.SPACE |
RF/Microwave Amplifiers |
100 Cel |
26 dB |
-60 Cel |
14000 MHz |
14500 MHz |
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Toshiba |
WIDE BAND MEDIUM POWER |
16 dBm |
1.9 |
COMPONENT |
50 ohm |
80 Cel |
-30 Cel |
27500 MHz |
29500 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
24.7 dBm |
2 |
50 ohm |
100 Cel |
18.7 dB |
-30 Cel |
430 MHz |
450 MHz |
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|
Toshiba |
NARROW BAND HIGH POWER |
PANEL MOUNT |
6 |
GAN |
1 |
27 dBm |
MODULE |
50 ohm |
20 dB |
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Toshiba |
NARROW BAND HIGH POWER |
7.7 dBm |
3 |
50 ohm |
100 Cel |
34.7 dB |
-30 Cel |
824 MHz |
849 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
24.7 dBm |
2 |
50 ohm |
100 Cel |
19.2 dB |
-30 Cel |
430 MHz |
450 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
13.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
889 MHz |
915 MHz |
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Toshiba |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
|||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
2 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.7 dB |
-30 Cel |
144 MHz |
148 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
CERAMIC |
GAAS |
1200 mA |
10 |
FLNG,.53"H.SPACE |
RF/Microwave Amplifiers |
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Toshiba |
NARROW BAND HIGH POWER |
4.7 dBm |
2.5 |
50 ohm |
100 Cel |
37.7 dB |
-30 Cel |
825 MHz |
845 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
16 dBm |
COMPONENT |
80 Cel |
30 dB |
-30 Cel |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
10.8 |
FLNG,1.6"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
150 MHz |
165 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
14.77 dBm |
20 |
MODULE |
5,12.5 |
FLNG,1.45"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
2 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-30 Cel |
150 MHz |
175 MHz |
||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
4.77 dBm |
2.5 |
50 ohm |
100 Cel |
39 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
903 MHz |
903 MHz |
||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
7.7 dBm |
3 |
50 ohm |
100 Cel |
34.7 dB |
-30 Cel |
824 MHz |
849 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
25.05 dBm |
20 |
1700 mA |
MODULE |
12 |
FLNG,1.45"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
889 MHz |
915 MHz |
||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
470 MHz |
490 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.