Toshiba RF & Microwave Amplifiers 182

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

S-AU80

Toshiba

NARROW BAND HIGH POWER

5

PLASTIC/EPOXY

HYBRID

3.6

MODULE,5LEAD,.53

RF/Microwave Amplifiers

S-AV36A

Toshiba

PLASTIC/EPOXY

1

12.5

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

S-AU30A

Toshiba

NARROW BAND LOW POWER

824 MHz

851 MHz

S-AU82AL

Toshiba

NARROW BAND HIGH POWER

20 dBm

3

MODULE

50 ohm

100 Cel

30.7 dB

-30 Cel

400 MHz

470 MHz

S-AU83H

Toshiba

NARROW BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

28 dB

-30 Cel

450 MHz

520 MHz

S-AU6L

Toshiba

WIDE BAND HIGH POWER

24 dBm

2

50 ohm

100 Cel

-30 Cel

400 MHz

440 MHz

S-AU57AVL

Toshiba

PLASTIC/EPOXY

HYBRID

5,7.5

FLNG,1.0"H.SPACE

RF/Microwave Amplifiers

TA4012F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

8.5 mA

COMPONENT

2

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

S-AU6M

Toshiba

WIDE BAND HIGH POWER

24 dBm

2

50 ohm

100 Cel

-30 Cel

440 MHz

480 MHz

S-AV8

Toshiba

NARROW BAND HIGH POWER

24.77 dBm

2

50 ohm

100 Cel

19.2 dB

-30 Cel

430 MHz

450 MHz

TA4011F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

S9751B

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1500 mA

9

FL6,.4,100

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

TA4011FU(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4019F

Toshiba

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

7.5 dB

-40 Cel

TA4009F

Toshiba

NARROW BAND LOW POWER

2.5

COMPONENT

50 ohm

85 Cel

-40 Cel

1895 MHz

1918 MHz

TA4003F(TE85L)

Toshiba

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4023F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

36 mA

COMPONENT

5

TSSOP8,.16

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

S-AV32

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

30.7 dB

-30 Cel

134 MHz

174 MHz

TA4013FU

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

14 mA

COMPONENT

2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

S-AV28

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

17 dBm

20

MODULE

9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

144 MHz

148 MHz

S9747

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

350 mA

6

FL6,.4,100

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

S-AU35ASH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

490 MHz

512 MHz

S-AU76

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

5

CERAMIC

HYBRID

12.3 dBm

20

MODULE

6

LCC5(UNSPEC)

50 ohm

RF/Microwave Amplifiers

100 Cel

-35 Cel

Tin/Lead (Sn/Pb)

e0

824 MHz

849 MHz

S-AU55

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

12 dBm

3

390 mA

COMPONENT

5.5,5.8

SMSIP5/6H,.5

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

Tin/Lead (Sn/Pb)

e0

824 MHz

849 MHz

TA4004F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

13 dB

-40 Cel

700 MHz

S-AU5M

Toshiba

PLASTIC/EPOXY

HYBRID

12.5

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

TA4401CT

Toshiba

NARROW BAND MEDIUM POWER

-3 dBm

2.5

COMPONENT

50 ohm

85 Cel

27.5 dB

-40 Cel

1880 MHz

1920 MHz

S-AU54

Toshiba

NARROW BAND LOW POWER

925 MHz

940 MHz

TMD1414-02B

Toshiba

NARROW BAND LOW POWER

METAL

GAAS

1

300 mA

7,-5

FLNG,.53"H.SPACE

RF/Microwave Amplifiers

90 Cel

-40 Cel

TMD1414-1L

Toshiba

NARROW BAND MEDIUM POWER

METAL

1

20 dBm

1200 mA

COMPONENT

7

FLNG,.53"H.SPACE

RF/Microwave Amplifiers

100 Cel

26 dB

-60 Cel

14000 MHz

14500 MHz

JS9770-AS

Toshiba

WIDE BAND MEDIUM POWER

16 dBm

1.9

COMPONENT

50 ohm

80 Cel

-30 Cel

27500 MHz

29500 MHz

S-AU3

Toshiba

NARROW BAND HIGH POWER

24.7 dBm

2

50 ohm

100 Cel

18.7 dB

-30 Cel

430 MHz

450 MHz

TGM9398-25

Toshiba

NARROW BAND HIGH POWER

PANEL MOUNT

6

GAN

1

27 dBm

MODULE

50 ohm

20 dB

S-AU66

Toshiba

NARROW BAND HIGH POWER

7.7 dBm

3

50 ohm

100 Cel

34.7 dB

-30 Cel

824 MHz

849 MHz

S-AU4

Toshiba

NARROW BAND HIGH POWER

24.7 dBm

2

50 ohm

100 Cel

19.2 dB

-30 Cel

430 MHz

450 MHz

S-AU39

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

20

MODULE

13.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

889 MHz

915 MHz

TA4002F

Toshiba

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

S-AV17

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

2

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

21.7 dB

-30 Cel

144 MHz

148 MHz

TMD2121-3A

Toshiba

NARROW BAND HIGH POWER

CERAMIC

GAAS

1200 mA

10

FLNG,.53"H.SPACE

RF/Microwave Amplifiers

S-AU21

Toshiba

NARROW BAND HIGH POWER

4.7 dBm

2.5

50 ohm

100 Cel

37.7 dB

-30 Cel

825 MHz

845 MHz

S9782

Toshiba

NARROW BAND HIGH POWER

16 dBm

COMPONENT

80 Cel

30 dB

-30 Cel

S-AV34

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

10.8

FLNG,1.6"H.SPACE

50 ohm

RF/Microwave Amplifiers

150 MHz

165 MHz

S-AV22A

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

14.77 dBm

20

MODULE

5,12.5

FLNG,1.45"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

144 MHz

148 MHz

S-AV10H

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

24.77 dBm

2

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-30 Cel

150 MHz

175 MHz

S-AU17A

Toshiba

NARROW BAND HIGH POWER

4.77 dBm

2.5

50 ohm

100 Cel

39 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

903 MHz

903 MHz

S-AU62

Toshiba

NARROW BAND HIGH POWER

7.7 dBm

3

50 ohm

100 Cel

34.7 dB

-30 Cel

824 MHz

849 MHz

S-AU86

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

25.05 dBm

20

1700 mA

MODULE

12

FLNG,1.45"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

889 MHz

915 MHz

S-AU35AVH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

470 MHz

490 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.