Toshiba RF & Microwave Amplifiers 182

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
JS9766-AS	Toshiba	WIDE BAND MEDIUM POWER						16 dBm	1.9		COMPONENT			50 ohm		80 Cel		-30 Cel				21200 MHz	23600 MHz
S-AV30H	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers	100 Cel		-30 Cel
S-AU30	Toshiba	NARROW BAND HIGH POWER						24.7 dBm	2					50 ohm		100 Cel	17.7 dB	-30 Cel				824 MHz	851 MHz
TMD1414-1B	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-1C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
S-AV35A	Toshiba	NARROW BAND HIGH POWER						13 dBm	3		MODULE			50 ohm		100 Cel	35 dB	-30 Cel				154 MHz	162 MHz
TG2014CS	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	18		HYBRID	1	6 dBm	3	1500 mA	COMPONENT	4.5	LCC18,.1X.14,20			85 Cel	24 dB	-30 Cel				1750 MHz	1910 MHz
S-AU50L	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						4,9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
S-AU27AL	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		27.78 dBm	20		MODULE	15	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	430 MHz
S-AU16L	Toshiba	WIDE BAND HIGH POWER						24.77 dBm	2.5							100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	400 MHz	430 MHz
S-AV21H	Toshiba	NARROW BAND LOW POWER																				150 MHz	175 MHz
S-AU50H	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						4,9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
S-AU57	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		17 dBm	3		COMPONENT	4,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	25.4 dB	-30 Cel				430 MHz	450 MHz
S-AU83AL	Toshiba	NARROW BAND HIGH POWER						20 dBm	3		MODULE			50 ohm		100 Cel	28 dB	-30 Cel				400 MHz	470 MHz
S-AV10L	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		24.77 dBm	2		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-30 Cel				135 MHz	155 MHz
TMD0608-4	Toshiba	WIDE BAND HIGH POWER						18 dBm			MODULE					80 Cel		-30 Cel				5650 MHz	8500 MHz
TMD1925-3	Toshiba	NARROW BAND HIGH POWER			CERAMIC		1	13 dBm		1900 mA	COMPONENT	10	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers							1900 MHz	2500 MHz
S-AU56	Toshiba	NARROW BAND LOW POWER																				872 MHz	905 MHz
S-AV33	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-30 Cel				134 MHz	174 MHz
S-AV9L	Toshiba				PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers	100 Cel		-30 Cel
S-AV15	Toshiba	NARROW BAND HIGH POWER						24.7 dBm	2							100 Cel	22 dB	-30 Cel				220 MHz	225 MHz
S-AU82AVL	Toshiba	NARROW BAND HIGH POWER						20 dBm	3		MODULE			50 ohm		100 Cel	30.7 dB	-30 Cel				378 MHz	440 MHz
S-AU16VH	Toshiba	WIDE BAND HIGH POWER						24.77 dBm	2.5							100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	470 MHz	490 MHz
TMD1414-1G	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC		1					7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
S-AU35AVL	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				360 MHz	380 MHz
S-AU5L	Toshiba				PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
TMD1414-2	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS				1800 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TA4000F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				15 mA	COMPONENT	5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel		LOW NOISE
TA4016AFE	Toshiba	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	2800 MHz
S-AV37A	Toshiba	NARROW BAND HIGH POWER						13 dBm	3		MODULE			50 ohm		100 Cel	35 dB	-30 Cel				154 MHz	162 MHz
S-AU47	Toshiba	NARROW BAND LOW POWER																				824 MHz	849 MHz
S-AU26	Toshiba	NARROW BAND HIGH POWER						14.77 dBm	20		MODULE			50 ohm		100 Cel		-30 Cel				430 MHz	450 MHz
S-AV23AH	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				150 MHz	163 MHz
S-AV16H	Toshiba	NARROW BAND HIGH POWER						24 dBm	2.5					50 ohm		100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	150 MHz	160 MHz
S-AU35AH	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				450 MHz	470 MHz
S-AV37	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	13 dBm	3		COMPONENT	12.5	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel	33 dB	-30 Cel				154 MHz	162 MHz
TA4002F(TE85L)	Toshiba		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				20 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel
TA4012AFE	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			8.5 mA	COMPONENT	2	TSSOP6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.