Toshiba RF & Microwave Amplifiers 182

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

S-AV35

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

13 dBm

3

COMPONENT

12.5

FLNG,1.6"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

33 dB

-30 Cel

154 MHz

162 MHz

TMD1013-1-431

Toshiba

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

1

15 dBm

COMPONENT

10,-5

FLNG,.53"H.SPACE

50 ohm

RF/Microwave Amplifiers

9500 MHz

12000 MHz

S-AV6

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

24.77 dBm

2

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

21.4 dB

-30 Cel

154 MHz

162 MHz

S-AU83AH

Toshiba

NARROW BAND HIGH POWER

20 dBm

3

MODULE

50 ohm

100 Cel

28 dB

-30 Cel

450 MHz

520 MHz

S-AU81

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

6

CERAMIC

1

3.6

DILCC6,.25,67

RF/Microwave Amplifiers

60 Cel

-20 Cel

S-AU68L

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

17 dBm

5

COMPONENT

4,9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

400 MHz

420 MHz

TA4004F(TE85L)

Toshiba

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

S-AV9H

Toshiba

PLASTIC/EPOXY

HYBRID

12.5

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

100 Cel

-30 Cel

S-AU27AH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

20

MODULE

15

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

490 MHz

512 MHz

TA4001F(TE85L)

Toshiba

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

24 mA

5

SOT-143R

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4012AFE(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

8.5 mA

2

TSSOP6,.06,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

S-AU35AL

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

400 MHz

430 MHz

S-AU82L

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

30.7 dB

-30 Cel

400 MHz

470 MHz

S-AV36

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

32 dB

-30 Cel

134 MHz

174 MHz

JS9U29-AS

Toshiba

WIDE BAND HIGH POWER

TMD1415-2B

Toshiba

WIDE BAND MEDIUM POWER

CERAMIC

GAAS

1

7,-5

FLNG,.53"H.SPACE

RF/Microwave Amplifiers

TMD0507-2A

Toshiba

WIDE BAND MEDIUM POWER

CERAMIC

GAAS

1

20 dBm

3

MODULE

10,-5

FLNG,.59"H.SPACE

50 ohm

RF/Microwave Amplifiers

80 Cel

-30 Cel

5100 MHz

7200 MHz

JS9U30-AS

Toshiba

WIDE BAND HIGH POWER

TMD0507-2

Toshiba

WIDE BAND MEDIUM POWER

CERAMIC

GAAS

2000 mA

10

FLNG,.59"H.SPACE

RF/Microwave Amplifiers

S-AU50M

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.76 dBm

3

COMPONENT

9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

21.4 dB

-30 Cel

430 MHz

480 MHz

S-AV21L

Toshiba

NARROW BAND LOW POWER

135 MHz

155 MHz

S-AU57AH

Toshiba

PLASTIC/EPOXY

HYBRID

5,7.5

FLNG,1.0"H.SPACE

RF/Microwave Amplifiers

S-AU9

Toshiba

NARROW BAND HIGH POWER

26 dBm

2

50 ohm

100 Cel

18.4 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

905 MHz

915 MHz

TMD7185-2

Toshiba

WIDE BAND MEDIUM POWER

CERAMIC

1

10 dBm

3

1700 mA

COMPONENT

10,-5

FLNG,.59"H.SPACE

50 ohm

RF/Microwave Amplifiers

80 Cel

-30 Cel

7100 MHz

8500 MHz

S-AV23AL

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

135 MHz

150 MHz

S-AU52

Toshiba

NARROW BAND LOW POWER

898 MHz

925 MHz

TG2006FA

Toshiba

NARROW BAND MEDIUM POWER

TMD0305-2

Toshiba

WIDE BAND MEDIUM POWER

CERAMIC

GAAS

25 dBm

3

1900 mA

MODULE

10

FLNG,.59"H.SPACE

50 ohm

RF/Microwave Amplifiers

20 dB

Tin/Lead (Sn/Pb)

e0

3400 MHz

5100 MHz

S-AV38

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

17 dBm

2.5

COMPONENT

7.2

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

260 MHz

266 MHz

S-AU16SH

Toshiba

WIDE BAND HIGH POWER

24.77 dBm

2.5

100 Cel

-30 Cel

Tin/Lead (Sn/Pb)

e0

490 MHz

512 MHz

S-AU70

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

24.77 dBm

20

MODULE

13

FLNG,1.45"H.SPACE

50 ohm

RF/Microwave Amplifiers

110 Cel

-30 Cel

824 MHz

849 MHz

S-AU16H

Toshiba

WIDE BAND HIGH POWER

24.77 dBm

2.5

100 Cel

-30 Cel

Tin/Lead (Sn/Pb)

e0

450 MHz

470 MHz

TMD1013-1

Toshiba

WIDE BAND MEDIUM POWER

CERAMIC

GAAS

1

15 dBm

3

MODULE

10,-5

FLNG,.53"H.SPACE

50 ohm

RF/Microwave Amplifiers

80 Cel

-30 Cel

10000 MHz

13300 MHz

S-AV12

Toshiba

NARROW BAND LOW POWER

144 MHz

148 MHz

TA4012FU

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

8.5 mA

COMPONENT

2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4016AFE(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

8 mA

2

TSSOP6,.06,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

S-AU5H

Toshiba

PLASTIC/EPOXY

HYBRID

12.5

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

S-AU7

Toshiba

PLASTIC/EPOXY

HYBRID

12.5

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

TA4008F

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

2.5

12 mA

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

1640 MHz

1700 MHz

TMD3438-1

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

CERAMIC

GAAS

7.5,-5

QFL24,.37SQ

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

S-AV7

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

24.77 dBm

20

MODULE

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

144 MHz

148 MHz

TA4000F(TE85L,F)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 mA

5

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

S-AU57ASH

Toshiba

PLASTIC/EPOXY

HYBRID

5,7.5

FLNG,1.0"H.SPACE

RF/Microwave Amplifiers

S-AU82H

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

COMPONENT

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

30.7 dB

-30 Cel

450 MHz

520 MHz

S-AU27AM

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

27.78 dBm

20

MODULE

12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

450 MHz

490 MHz

S-AU6H

Toshiba

WIDE BAND HIGH POWER

24 dBm

2

50 ohm

100 Cel

-30 Cel

480 MHz

512 MHz

S-AV23AVH

Toshiba

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

20

MODULE

5,7.5

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

160 MHz

174 MHz

S9751A

Toshiba

NARROW BAND HIGH POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1900 mA

9

FL6,.4,100

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.