Toshiba RF & Microwave Amplifiers 182

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
S-AU83L	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-30 Cel			400 MHz	470 MHz
TG2006F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		10 dBm	20	150 mA	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel			1895 MHz	1918 MHz
S-AU68M	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						4,9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
TA4003F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
S-AU77	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	e0	872 MHz	905 MHz
S9751	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1400 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
TA4017FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	2			25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel			700 MHz
TMD1414-2C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC		1	20 dBm		1800 mA	MODULE	7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers						13750 MHz	14500 MHz
TMD1414-2B	Toshiba	NARROW BAND MEDIUM POWER
TA4020FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		7 mA	COMPONENT	3	SOT-143R		RF/Microwave Amplifiers	85 Cel	8.5 dB	-40 Cel			1500 MHz	2600 MHz
S-AU31A	Toshiba	NARROW BAND LOW POWER																			872 MHz	905 MHz
TMD1414-02C	Toshiba	NARROW BAND LOW POWER			METAL	GAAS	1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
S-AV16L	Toshiba	NARROW BAND HIGH POWER						24 dBm	2.5					50 ohm		100 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0	135 MHz	150 MHz
S-AU94	Toshiba	NARROW BAND HIGH POWER						19 dBm	4.5		MODULE			50 ohm		100 Cel	24.8 dB	-30 Cel			450 MHz	490 MHz
S-AU87	Toshiba		SURFACE MOUNT	6	CERAMIC		1			1000 mA		6	SOLCC6,.12,47		RF/Microwave Amplifiers	85 Cel		-20 Cel
S-AU93	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	5,12	FLNG,2.36"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	30.7 dB	-30 Cel			430 MHz	500 MHz
TMD1414-02	Toshiba	NARROW BAND LOW POWER			METAL	GAAS				300 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TG2005F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1			180 mA		-1.3,3	TSSOP8,.16		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
TA4000F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				15 mA		5	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
TA4001F	Toshiba	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel
S-AU33	Toshiba	NARROW BAND HIGH POWER						7.7 dBm	2.5					50 ohm		100 Cel	34.7 dB	-30 Cel			824 MHz	851 MHz
TA4022F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			42 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
TA4011AFE	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.5 mA	COMPONENT	2	TSSOP6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel
S-AU84	Toshiba		SURFACE MOUNT	6	CERAMIC		1			440 mA		3.5	DILCC6,.25,67		RF/Microwave Amplifiers	85 Cel		-20 Cel
S-AU82AH	Toshiba	NARROW BAND HIGH POWER						20 dBm	3		MODULE			50 ohm		100 Cel	30.7 dB	-30 Cel			450 MHz	520 MHz
JS9768-AS	Toshiba	WIDE BAND MEDIUM POWER						16 dBm	1.9		COMPONENT			50 ohm		80 Cel		-30 Cel			24500 MHz	26500 MHz
S-AU40	Toshiba	NARROW BAND LOW POWER																			872 MHz	905 MHz
S-AV5	Toshiba	NARROW BAND HIGH POWER						24.77 dBm	2					50 ohm		100 Cel	18.7 dB	-30 Cel			144 MHz	148 MHz
S-AU25	Toshiba	NARROW BAND HIGH POWER						4.7 dBm	2.5					50 ohm		100 Cel	37.7 dB	-30 Cel			890 MHz	915 MHz
TDM0305-2	Toshiba				CERAMIC	GAAS	1			1900 mA		10,-5	FLNG,.59"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel
TG2002V	Toshiba	NARROW BAND MEDIUM POWER						3 dBm	20		MODULE			50 ohm		60 Cel		-10 Cel			1895 MHz	1918 MHz
TG2006FB	Toshiba	NARROW BAND MEDIUM POWER
S-AU57AL	Toshiba				PLASTIC/EPOXY	HYBRID						5,7.5	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
TMD1414-1	Toshiba	NARROW BAND MEDIUM POWER			METAL	GAAS				1000 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TA4011FU	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
S-AV16VH	Toshiba	NARROW BAND HIGH POWER						24 dBm	2.5					50 ohm		100 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0	160 MHz	174 MHz
S9750	Toshiba	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		13 dBm		400 mA	COMPONENT	6	FL8,.32FL	50 ohm	RF/Microwave Amplifiers	80 Cel	19 dB	-30 Cel	Tin/Lead (Sn/Pb)	e0
TG2006FTE12L	Toshiba		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS				150 mA		3	TSSOP8,.16		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
TMD5872-2	Toshiba	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1	10 dBm	3	1600 mA	MODULE	10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel			5800 MHz	7200 MHz
S-AU57AVH	Toshiba				PLASTIC/EPOXY	HYBRID						5,7.5	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
S-AU82ASL	Toshiba	NARROW BAND HIGH POWER						20 dBm	3		COMPONENT			50 ohm		100 Cel	30.7 dB	-30 Cel			350 MHz	390 MHz
S-AU82VL	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	30.7 dB	-30 Cel			378 MHz	440 MHz
TA4011AFE(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.5 mA		2	TSSOP6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
S-AU93A	Toshiba	NARROW BAND HIGH POWER						20 dBm	3		MODULE			50 ohm		100 Cel	30.7 dB	-30 Cel			430 MHz	500 MHz
TMD0708-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	2000 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel			7100 MHz	8500 MHz
S-AU27ALAM	Toshiba	NARROW BAND LOW POWER																			400 MHz	430 MHz
TA4013F	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				14 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	e0
TMD5872-2-321	Toshiba	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1					10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.