BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 183

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

BSM50GD120DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

85 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

BSM50GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

72 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM35GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

70 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

110 ns

BSM30GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

103 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

39 ns

BSM20GD60DLCE3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

32 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

146 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

71 ns

BSM05GD100DN1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

6

17

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-T17

Not Qualified

BSM25GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

50 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

380 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

BSM35GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

70 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

370 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

BSM25GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

BSM35GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

120 ns

CPV362MU

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

7.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

6

13

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T13

ISOLATED

Not Qualified

ULTRA FAST

40

260

CPV363MUPBF

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

6

13

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T13

ISOLATED

ULTRA FAST

NOT SPECIFIED

NOT SPECIFIED

CPV363MU

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

6

13

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T13

ISOLATED

Not Qualified

ULTRA FAST

40

260

CPV362MUPBF

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

7.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

6

13

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T13

ISOLATED

ULTRA FAST

NOT SPECIFIED

NOT SPECIFIED

BSM15GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

145 W

25 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

FS75R12KE3_B9

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

355 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

26

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X26

1

ISOLATED

Not Qualified

260

340 ns

FS50R17KE3_B17

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

345 W

82 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

1100 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X19

1

ISOLATED

Not Qualified

260

450 ns

BSM15GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

100 ns

FS100R12KT4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS10R12VT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

64 W

16 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

540 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

62 ns

FS400R12KF4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

2500 W

400 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

1150 ns

27

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X27

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

BSM15GD120DN2E3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

100 ns

FS50R17KE3B17BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

82 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

1100 ns

19

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

450 ns

UL APPROVED

FS10R12VT3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

16 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

540 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

62 ns

BSM15GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

145 W

35 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

390 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

BSM75GD60DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

330 W

95 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

205 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

BSM10GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

460 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

105 ns

FS75R12KE3B9BDLA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

26

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X26

ISOLATED

340 ns

UL RECOGNIZED

FS100R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

515 W

100 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X25

ISOLATED

185 ns

BSM10GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

6

460 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

BSM100GD60DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

430 W

130 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

180 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

36 ns

BSM15GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

145 W

25 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM75GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

95 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

205 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

90 ns

FS100R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

515 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

BSM10GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

460 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FS75R12KS4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

500 W

100 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

6

390 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

BSM75GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

520 W

103 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

520 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM100GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

130 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

180 ns

39

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

36 ns

FS100R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

185 ns

FS100R12KS4BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

130 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

390 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FS100R12KS4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

660 W

130 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

6

390 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

BSM100GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

6

470 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-T39

ISOLATED

Not Qualified

240 ns

BSM75GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

103 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

520 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

100 ns

BSM15GD120DN1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

PIN/PEG

RECTANGULAR

6

17

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-P17

Not Qualified

BSM15GD100D

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

15 A

PLASTIC/EPOXY

POWER CONTROL

5 V

SOLDER LUG

RECTANGULAR

6

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

20 V

UPPER

R-PUFM-D17

ISOLATED

Not Qualified

15 ns

FS100R12KT4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

515 W

100 A

UNSPECIFIED

2.1 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

BSM150GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

180 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

39

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

155 ns

BSM15GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

35 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

390 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

130 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.