Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
105 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
26 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
525 ns |
33 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
196 ns |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
225 W |
72 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
PIN/PEG |
RECTANGULAR |
6 |
330 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-P11 |
ISOLATED |
Not Qualified |
ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
110 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
72 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
100 ns |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
100 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
390 ns |
39 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
730 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
20 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
30 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
225 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN SILVER |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e2 |
90 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
500 W |
125 A |
UNSPECIFIED |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
420 ns |
39 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
630 W |
183 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
700 ns |
19 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
175 ns |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
280 W |
90 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
6 |
310 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e3 |
100 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
19 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X19 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
SOLDER LUG |
RECTANGULAR |
6 |
500 ns |
15 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-PUFM-D15 |
ISOLATED |
Not Qualified |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
15 A |
6 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
55 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
350 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
55 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T11 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
640 W |
165 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
795 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN OVER NICKEL |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
e3 |
345 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
160 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
480 ns |
39 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
Not Qualified |
110 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 W |
35 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
96 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
128 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X28 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
56 W |
19 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
99 ns |
16 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
197 W |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
338 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
125.2 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
364 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
525 ns |
33 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
196 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
35 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
140 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
280 W |
50 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
300 A |
UNSPECIFIED |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
6 |
1150 ns |
27 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X27 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
480 W |
100 A |
UNSPECIFIED |
3.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
930 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
40 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
103 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
39 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
135 W |
40 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
103 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
85 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
110 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
50 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
120 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
280 W |
50 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
135 W |
40 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
103 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
400 W |
78 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
450 ns |
39 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-T39 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
50 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
380 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
120 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
35 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
140 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
70 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
151 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
52 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
700 W |
226 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
19 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
229 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
125 W |
32 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
146 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
71 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
PIN/PEG |
RECTANGULAR |
6 |
17 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-P17 |
Not Qualified |
||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
226 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
229 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
86 W |
24 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
590 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
72 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
151 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
100 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
930 ns |
21 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
200 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
430 W |
150 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
300 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.5 V |
SOLDER LUG |
RECTANGULAR |
6 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
UPPER |
R-PUFM-D17 |
ISOLATED |
Not Qualified |
30 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
24 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
590 ns |
11 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
72 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
750 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
525 ns |
33 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X33 |
1 |
ISOLATED |
Not Qualified |
260 |
196 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
78 A |
UNSPECIFIED |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
6 |
450 ns |
39 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-T39 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.