BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 183

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS400R12KF4NOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

1150 ns

27

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X27

ISOLATED

800 ns

BSM100GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

680 W

150 A

UNSPECIFIED

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

6

470 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-T39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

240 ns

BSM75GD120DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

125 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

420 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

e3

110 ns

FS100R12KT4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

515 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

BSM75GD170DL

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

150 A

UNSPECIFIED

3.3 V

UNSPECIFIED

RECTANGULAR

6

930 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

BSM150GD60DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

570 W

180 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

260 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

155 ns

BSM10GD100DN1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

10 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

6

17

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-T17

Not Qualified

BSM100GD120DLC

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

650 W

160 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

480 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

BSM10GD120DN2E3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

460 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

105 ns

MG8Q6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

8 A

6

SILICON

1200 V

Not Qualified

MG25Q6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

POWER CONTROL

4 V

SOLDER LUG

RECTANGULAR

6

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG100J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

6

350 ns

19

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X19

Not Qualified

HIGH SPEED

MP6751

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

UNSPECIFIED

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

6

1000 ns

11

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-XSFM-T11

ISOLATED

Not Qualified

HIGH SPEED

e0

400 ns

MG15N6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

1000 ns

17

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-D17

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG25Q6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1200 V

Not Qualified

MG8J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

50 W

8 A

4 V

6

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

Not Qualified

MG15Q6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

4 V

SOLDER LUG

RECTANGULAR

6

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG15Q6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1200 V

Not Qualified

MG15Q6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1200 V

Not Qualified

MG25Q6ES51

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MG8N6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

8 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

850 ns

17

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-D17

ISOLATED

Not Qualified

HIGH SPEED

350 ns

MG50J6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

280 W

50 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

6

300 ns

200 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

280 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

MP6754

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

40 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

6

350 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

40 W

150 Cel

SILICON

600 V

20 V

9 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

HIGH SPEED

e0

MG75J6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

75 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

6

300 ns

500 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

390 W

150 Cel

SILICON

600 V

20 V

8 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG15H6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

700 ns

15

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-D15

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG100J6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

450 W

100 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

6

300 ns

200 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

450 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

MG50Q6ES11

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

6

1000 ns

19

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X19

Not Qualified

MG25Q6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1200 V

Not Qualified

MG8N6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

8 A

6

SILICON

1000 V

Not Qualified

MG50Q6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

50 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

6

500 ns

800 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

250 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG75J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

6

350 ns

19

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X19

Not Qualified

HIGH SPEED

MG50J6ES91

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

50 A

6

SILICON

600 V

Not Qualified

MG25J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 W

25 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

SOLDER LUG

RECTANGULAR

6

350 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

MP6752

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

60 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

6

500 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

e0

400 ns

MG25Q6ES50A

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

6

300 ns

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

HIGH SPEED

150 ns

MG8Q6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

8 A

6

SILICON

1200 V

Not Qualified

MG50Q6ES51

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

72 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MG25N6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1000 V

Not Qualified

MG100J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

500 ns

19

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X19

ISOLATED

Not Qualified

400 ns

MG15J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

80 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

SOLDER LUG

RECTANGULAR

6

600 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

UPPER

R-PUFM-D13

ISOLATED

Not Qualified

HIGH SPEED

e0

400 ns

MG25Q6ES51A

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MP6759

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

40 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

6

400 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

e0

400 ns

MG15N6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

15 A

6

SILICON

1000 V

Not Qualified

MG50Q6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

6

500 ns

19

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X19

Not Qualified

HIGH SPEED

MP6753

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

60 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

6

1000 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

MG25Q6ES11

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1200 V

Not Qualified

MG25J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-D17

ISOLATED

Not Qualified

400 ns

MG15Q6ES50A

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

200 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.