SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR Insulated Gate Bipolar Transistors (IGBT) 32

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGD25N40LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

435 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

STGD20N45LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

475 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

STGB25N40LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

435 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

STGB20N45LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

475 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

NGB8202ANTF4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

6500 ns

FGD2736G3-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.65 V

GULL WING

RECTANGULAR

1

15000 ns

6300 ns

2

SMALL OUTLINE

175 Cel

SILICON

360 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

260

3900 ns

FGD2736G3-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

37.5 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.65 V

GULL WING

RECTANGULAR

1

15000 ns

6300 ns

2

SMALL OUTLINE

175 Cel

SILICON

330 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

e3

30

260

3900 ns

AEC-Q101

FGD3050G2V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

32 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.2 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

2500 ns

AEC-Q101

FGD3325G2-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

7300 ns

2

SMALL OUTLINE

175 Cel

SILICON

240 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

260

2000 ns

AEC-Q101

FGD3440G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

166 W

26.9 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7 ns

1.75 V

GULL WING

RECTANGULAR

1

15 ns

7.6 ns

2

SMALL OUTLINE

175 Cel

SILICON

40 V

11 ns

-40 Cel

14 V

26 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

3 ns

FGD3325G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

7300 ns

2

SMALL OUTLINE

175 Cel

SILICON

240 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

260

2000 ns

AEC-Q101

STGB25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

4560 ns

AEC-Q101

STGB20N40LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.8 V

GULL WING

RECTANGULAR

1

8200 ns

2

SMALL OUTLINE

175 Cel

SILICON

425 V

-55 Cel

16 V

2.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

5200 ns

AEC-Q101

STGD20N40LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.8 V

GULL WING

RECTANGULAR

1

8200 ns

2

SMALL OUTLINE

175 Cel

SILICON

425 V

-55 Cel

16 V

2.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

5200 ns

AEC-Q101

STGI25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

NO

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

THROUGH-HOLE

RECTANGULAR

1

14500 ns

3

IN-LINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSIP-T3

COLLECTOR

4560 ns

AEC-Q101

STGD25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

4560 ns

AEC-Q101

IRGC14C40LD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

14 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

370 V

2.4 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

IRGC14C40LB

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

14 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

370 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGC14C40LC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

14 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

370 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

LGB8206ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGB8207TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

LGD8201ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGB8206ARI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGB8204ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

LGB8245TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

6000 ns

GULL WING

RECTANGULAR

1

12000 ns

12500 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

8000 ns

-55 Cel

15 V

20000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

4400 ns

AEC-Q101

LGB8207ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

LGD18N45TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

9000 ns

2.85 V

GULL WING

RECTANGULAR

1

7000 ns

5400 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

10400 ns

-55 Cel

18 V

19000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

2920 ns

AEC-Q101

LGD8205ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

LGD8209TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

94 W

12 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

175 Cel

SILICON

445 V

-55 Cel

15 V

2 V

SINGLE

R-PSSO-G2

COLLECTOR

LGB8202ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

24000 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

18500 ns

AEC-Q101

LGD18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

LGD8201TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.