Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
435 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
475 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
435 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
475 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
6500 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6300 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
360 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
260 |
3900 ns |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
37.5 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6300 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
330 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
e3 |
30 |
260 |
3900 ns |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
32 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.2 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
500 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
2500 ns |
AEC-Q101 |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7300 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
240 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
260 |
2000 ns |
AEC-Q101 |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
166 W |
26.9 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7 ns |
1.75 V |
GULL WING |
RECTANGULAR |
1 |
15 ns |
7.6 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
40 V |
11 ns |
-40 Cel |
14 V |
26 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
3 ns |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7300 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
240 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
260 |
2000 ns |
AEC-Q101 |
|||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
385 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
4560 ns |
AEC-Q101 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
8200 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
425 V |
-55 Cel |
16 V |
2.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
5200 ns |
AEC-Q101 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
125 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
8200 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
425 V |
-55 Cel |
16 V |
2.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
5200 ns |
AEC-Q101 |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
NO |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
14500 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
385 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
4560 ns |
AEC-Q101 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
385 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
4560 ns |
AEC-Q101 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
2.4 V |
TIN LEAD |
UPPER |
R-XUUC-N2 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
14 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
370 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
165 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
14700 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
365 V |
2750 ns |
-55 Cel |
15 V |
21000 ns |
2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
2450 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
6500 ns |
AEC-Q101 |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
115 W |
18 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
430 V |
11000 ns |
-55 Cel |
18 V |
25000 ns |
1.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
5200 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
6000 ns |
GULL WING |
RECTANGULAR |
1 |
12000 ns |
12500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
500 V |
8000 ns |
-55 Cel |
15 V |
20000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
4400 ns |
AEC-Q101 |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
165 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
2000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
14700 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
365 V |
2750 ns |
-55 Cel |
15 V |
21000 ns |
2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
2450 ns |
AEC-Q101 |
|||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
115 W |
18 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
9000 ns |
2.85 V |
GULL WING |
RECTANGULAR |
1 |
7000 ns |
5400 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
500 V |
10400 ns |
-55 Cel |
18 V |
19000 ns |
1.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
2920 ns |
AEC-Q101 |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
14000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
10000 ns |
-55 Cel |
15 V |
18000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
7500 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
94 W |
12 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
445 V |
-55 Cel |
15 V |
2 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
|||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
24000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
18500 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
115 W |
15 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
13000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
430 V |
11000 ns |
-55 Cel |
18 V |
25000 ns |
1.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
5200 ns |
AEC-Q101 |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
8000 ns |
14000 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
10000 ns |
-55 Cel |
15 V |
18000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
7500 ns |
AEC-Q101 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.