10 A Insulated Gate Bipolar Transistors (IGBT) 131

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Fall Time (tf)	Maximum Drain Current (Abs) (ID)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FGD5T120SH	Onsemi	N-CHANNEL	SINGLE	YES	69 W	10 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	3.6 V	GULL WING	RECTANGULAR		1			159.6 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	25 V		4.5 V	Matte Tin (Sn) - annealed		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	245	44.8 ns
STGD5NB120SZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	55 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1			14100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	Matte Tin (Sn) - annealed		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	850 ns
STGP5H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	88 W	10 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR		1			280 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V			SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	39 ns
ISL9V2040D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR		1			6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	390 V	-40 Cel	12 V		2.2 V	Matte Tin (Sn) - annealed		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	2780 ns
IXGH10N170A	Littelfuse	N-CHANNEL	SINGLE	NO		10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR		1			240 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V					MATTE TIN		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	107 ns
IXGT10N170A	Littelfuse	N-CHANNEL	SINGLE	YES		10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			240 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V					MATTE TIN		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	107 ns
SGS5N150UF	Onsemi	N-CHANNEL	SINGLE	NO	50 W	10 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	5.5 V	THROUGH-HOLE	RECTANGULAR		1	120 ns		100 ns	3	FLANGE MOUNT			150 Cel	SILICON	1500 V	-55 Cel	20 V	170 ns	4 V			SINGLE	R-PSFM-T3		ISOLATED		HIGH SPEED SWITCHING	TO-220AB				25 ns
AOD5B60D	Alpha & Omega Semiconductor	N-CHANNEL		YES	54.4 W	10 A													Insulated Gate BIP Transistors		150 Cel		600 V		20 V
SGF5N150UFTU	Onsemi	N-CHANNEL	SINGLE	NO	62.5 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1	120 ns		100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1500 V		20 V		4 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			25 ns
MGP7N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	81 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR		1			415 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		8 V	TIN LEAD		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING	TO-220AB	e0			55 ns
SGF5N150UF	Onsemi	N-CHANNEL	SINGLE	NO	62.5 W	10 A	PLASTIC/EPOXY	POWER CONTROL	5.5 V	THROUGH-HOLE	RECTANGULAR		1	120 ns		100 ns	3	FLANGE MOUNT			150 Cel	SILICON	1500 V	-55 Cel	20 V	170 ns	4 V			SINGLE	R-PSFM-T3									25 ns
FGB5N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1	202 ns		151.6 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		8.5 V	MATTE TIN		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	7.5 ns
FGP5N60LS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	10 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		THROUGH-HOLE	RECTANGULAR		1			187 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		4.5 V	MATTE TIN		SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			5.9 ns
MGP7N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	81 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR		1			415 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		8 V	TIN LEAD		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY	TO-220AB	e0			55 ns
ISL9V2040D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR		1			6000 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	-40 Cel	12 V		2.2 V			SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2780 ns
ISL9V2040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR		1			6000 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	-40 Cel	12 V		2.2 V			SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2780 ns
ISL9V2040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	1.9 V	GULL WING	RECTANGULAR		1			6000 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	-40 Cel	12 V		2.2 V			SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2780 ns
ISL9V2040P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	THROUGH-HOLE	RECTANGULAR		1			6000 ns	3	FLANGE MOUNT			175 Cel	SILICON	390 V	-40 Cel	12 V		2.2 V			SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2780 ns
ISL9V2040S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR		1			6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	390 V	-40 Cel	12 V		2.2 V	Matte Tin (Sn) - annealed		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2780 ns
STHI10N50	STMicroelectronics	N-CHANNEL	SINGLE	NO	100 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		10 A	1300 ns	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	500 V					TIN LEAD	10 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			800 ns
STHI10N50FI	STMicroelectronics	N-CHANNEL	SINGLE	NO	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		10 A	1300 ns	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	500 V					TIN LEAD	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0			800 ns
STGP3NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1				3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V			SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STGP3NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1			220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			19 ns
STGF10NC60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1			560 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	ULTRA FAST	TO-220AB	e3			22.5 ns
STGD3NB60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			18 ns
STGP3NB60HDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR		1			168 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			16 ns
STGP3NB60K	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR		1			220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			19 ns
STGF7NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1			221 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			25.5 ns
STGB5H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	10 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	GULL WING	RECTANGULAR		1			280 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V			SINGLE	R-PSSO-G2		COLLECTOR		BULK: 1000	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	39 ns
STGD3NB60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN		SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3			25 ns
STGD3NC60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1				2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V			SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
STGB3NB60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1			220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSSO-G2	1		Not Qualified			e3			19 ns
STGD7NB120S-1	STMicroelectronics	N-CHANNEL	SINGLE	NO	55 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR		1				3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD		SINGLE	R-PSIP-T3			Not Qualified		TO-251	e0			840 ns
STGD5NB120SZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	55 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1			14100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252AA	e3			850 ns
STGD3NB60K	STMicroelectronics	N-CHANNEL	SINGLE	YES	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			19 ns
STGD3NC60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1				2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V			SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
STGD3NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			25 ns
STGD3NB60KT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			19 ns
STGF5H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	24 W	10 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR		1			280 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V			SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	39 ns
STGD3NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1				2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V			SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
STGD5H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	10 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	GULL WING	RECTANGULAR		1			280 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V			SINGLE	R-PSSO-G2		COLLECTOR		BULK: 1000	TO-252		NOT SPECIFIED	NOT SPECIFIED	39 ns
STGB3NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD		SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e0			16 ns
STGB10NB40LZ	STMicroelectronics	N-CHANNEL		YES	150 W	10 A													Insulated Gate BIP Transistors		175 Cel						2.2 V	Matte Tin (Sn)									e3
STGB3NB60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e3			16 ns
STGD3NC60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1				2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V			SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
STGB3NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	10 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR		1			220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	Matte Tin (Sn)		SINGLE	R-PSSO-G2			Not Qualified			e3			19 ns
STGD5NB120SZ-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	55 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1			14100 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		5 V	TIN		SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified		TO-251AA	e3			850 ns
STGP3NB60KDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	10 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR		1			220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			19 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.