10 A Insulated Gate Bipolar Transistors (IGBT) 131

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Emitter Current	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Minimum Intrinsic Stand-off Ratio	Terminal Position	JESD-30 Code	Case Connection	Qualification	Maximum Intrinsic Stand-off Ratio	Minimum Static Inter-Base Resistance	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
BSM10GD100D	Infineon Technologies				50 W	10 A					2.8 V			1					Insulated Gate BIP Transistors				1000 V
FP10R12W1T7_B3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		10 A	UNSPECIFIED	POWER CONTROL				UNSPECIFIED	RECTANGULAR	6		598 ns	20	FLANGE MOUNT			175 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V			UPPER	R-XUFM-X20	ISOLATED									45 ns	IEC-60747
BSM10GD100DN1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		10 A	PLASTIC/EPOXY					THROUGH-HOLE	RECTANGULAR	6			17	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-T17		Not Qualified
BSM10GD60DLC	Infineon Technologies				30 W	10 A					2.45 V			1					Insulated Gate BIP Transistors		125 Cel		600 V		20 V
FP10R12W1T7	Infineon Technologies	N-CHANNEL	COMPLEX	NO		10 A	UNSPECIFIED	POWER CONTROL				UNSPECIFIED	RECTANGULAR	7		351 ns	23	FLANGE MOUNT			175 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V			UPPER	R-XUFM-X23	ISOLATED									37 ns	IEC-60747; IEC-60749; IEC60068; IEC-61140
MIG10J503L	Toshiba				43 W	10 A					2.1 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
GT10J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	10 A	PLASTIC/EPOXY	POWER CONTROL			2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	90 W	150 Cel	SILICON	600 V		20 V	8 V			SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			HIGH SPEED			NOT SPECIFIED	240	400 ns
GT10G102	Toshiba	N-CHANNEL	SINGLE	NO		10 A	PLASTIC/EPOXY					THROUGH-HOLE	RECTANGULAR	1		4500 ns	3	FLANGE MOUNT				SILICON	400 V						SINGLE	R-PSFM-T3	ISOLATED	Not Qualified								150 ns
GT10J312(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	10 A	PLASTIC/EPOXY	POWER CONTROL				GULL WING	RECTANGULAR	1	300 ns	400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified			HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MIG10J805	Toshiba			NO	40 W	10 A	UNSPECIFIED				2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				DUAL	R-XDIP-T20		Not Qualified
MIG10J855E	Toshiba				40 W	10 A					2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MP6754	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	40 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		600 ns	4 V	THROUGH-HOLE	RECTANGULAR	6	350 ns		11	FLANGE MOUNT	Insulated Gate BIP Transistors	40 W	150 Cel	SILICON	600 V		20 V	9 V	Tin/Lead (Sn/Pb)		SINGLE	R-PSFM-T11	ISOLATED	Not Qualified			HIGH SPEED		e0
GT10G101	Toshiba	N-CHANNEL	SINGLE	NO		10 A	PLASTIC/EPOXY					THROUGH-HOLE	RECTANGULAR	1		4500 ns	3	FLANGE MOUNT				SILICON	400 V				TIN LEAD		SINGLE	R-PSFM-T3	ISOLATED	Not Qualified					e0			150 ns
GT10Q311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		10 A	PLASTIC/EPOXY	MOTOR CONTROL				GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V				TIN LEAD		SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified			HIGH SPEED SWITCHING		e0			400 ns
MIG10J855	Toshiba			NO	40 W	10 A	UNSPECIFIED				2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				DUAL	R-XDIP-T20		Not Qualified
MIG10Q805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		10 A	UNSPECIFIED	MOTOR CONTROL				THROUGH-HOLE	RECTANGULAR	6		600 ns	20	IN-LINE			150 Cel	SILICON	1200 V						DUAL	R-XDIP-T20	ISOLATED	Not Qualified						NOT SPECIFIED	NOT SPECIFIED	150 ns
MIG10J805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		10 A	UNSPECIFIED	MOTOR CONTROL				THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE				SILICON	600 V						DUAL	R-XDIP-T20	ISOLATED	Not Qualified			HIGH SPEED					150 ns
GT10J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	29 W	10 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR	1		300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	170 ns
MP6759	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	40 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			2.7 V	THROUGH-HOLE	RECTANGULAR	6		400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		Tin/Lead (Sn/Pb)		SINGLE	R-PSFM-T11	ISOLATED	Not Qualified					e0			400 ns
GT10Q101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	10 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR	1	320 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	300 ns
MIG10J855H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		10 A	UNSPECIFIED	MOTOR CONTROL				THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE				SILICON	600 V						DUAL	R-XDIP-T20	ISOLATED	Not Qualified			HIGH SPEED					150 ns
MIG10J805E	Toshiba				40 W	10 A					2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
GT10J312	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	10 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR	1	300 ns	400 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified			HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MIG10J503H	Toshiba					10 A					2.3 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
MIG10J504H	Toshiba					10 A					2.2 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
GT10J303	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	10 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT10Q301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	10 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR	1	320 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	300 ns
GT10J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			2.7 V	GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	80 W	150 Cel	SILICON	600 V		20 V	8 V	TIN LEAD		SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified			HIGH SPEED		e0			400 ns
GN6010A	Renesas Electronics	N-CHANNEL		NO	50 W	10 A				300 ns					350 ns				Insulated Gate BIP Transistors		150 Cel		600 V		20 V	5 V
RJH60A81RDPD-E0#J2	Renesas Electronics	N-CHANNEL		YES	29.4 W	10 A													Insulated Gate BIP Transistors		150 Cel		600 V		30 V
RJH60C9DPD-00-J2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	10 A	PLASTIC/EPOXY	POWER CONTROL				GULL WING	RECTANGULAR	1		290 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		30 V				SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified						NOT SPECIFIED	NOT SPECIFIED	75 ns
RJH60A01RDPD-A0#J2	Renesas Electronics	N-CHANNEL		YES	29.4 W	10 A													Insulated Gate BIP Transistors		150 Cel		600 V		30 V													NOT SPECIFIED	NOT SPECIFIED
2SH26	Renesas Electronics	N-CHANNEL	SINGLE	NO		10 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR	1		680 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified				TO-220AB				355 ns
2SH11	Renesas Electronics	N-CHANNEL	SINGLE	NO	.45 W	10 A	PLASTIC/EPOXY	POWER CONTROL	50 mA			THROUGH-HOLE	RECTANGULAR	1		900 ns	3	FLANGE MOUNT	Unijunction Transistors			SILICON	600 V				TIN LEAD	.58	SINGLE	R-PSFM-T3		Not Qualified	.75	4.5 kohm		TO-220AB	e0
IXGH10N50U1	Littelfuse	N-CHANNEL		NO	100 W	10 A				200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		20 V	5 V	Tin/Lead (Sn/Pb)										e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.