Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
149 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
48 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
455 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
56 ns |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
33 ns |
197 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
98 ns |
-55 Cel |
20 V |
249 ns |
7.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
87 ns |
||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.5 V |
NO LEAD |
RECTANGULAR |
1 |
1100 ns |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N3 |
120 ns |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
84.8 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
159 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
e3 |
87 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
188 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
101 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
352 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
MATTE TIN |
SINGLE |
R-PSFM-T4 |
RC-IGBT |
TO-247 |
e3 |
80 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
453 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.69 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
666 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
950 V |
-55 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T3 |
FAST SWITCHING |
TO-247 |
102 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
150 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
7 |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-PUFM-X24 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
938 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
468 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T4 |
TO-247 |
e3 |
73 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
894 ns |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
40 |
260 |
622 ns |
UL APPROVED |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
34 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUFM-X34 |
ISOLATED |
210 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
600 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
780 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
260 ns |
UL APPROVED |
||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
150 A |
3.5 V |
690 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
120000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
10 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
6.4 V |
UPPER |
R-XUUC-N10 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Infineon Technologies |
835 W |
150 A |
2.3 V |
1 |
Insulated Gate BIP Transistors |
175 Cel |
1700 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
5 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
SILICON |
1200 V |
-40 Cel |
UNSPECIFIED |
R-XXMA-X5 |
ISOLATED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
6 |
436 ns |
32 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
UL RECOGNIZED |
222 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
428 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
69 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
4 |
520 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
253 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-Channel |
150 A |
2.1 V |
695 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
165000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
4 |
520 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
253 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
10 |
UNCASED CHIP |
SILICON |
1700 V |
UPPER |
R-XUUC-N10 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
150 A |
2.9 V |
835 ns |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.5 V |
ISOLATED |
115000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
835 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
1240 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
280 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
430 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
750 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
605 ns |
41 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X41 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
165 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
780 ns |
34 |
FLANGE MOUNT |
SILICON |
1700 V |
-40 Cel |
UPPER |
R-XUFM-X34 |
ISOLATED |
260 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
880 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
331 ns |
4 |
IN-LINE |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
TIN |
SINGLE |
R-PSIP-T4 |
e3 |
64 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-Channel |
150 A |
2.6 V |
760 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
ISOLATED |
120000 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
790 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
1 |
490 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
1 |
ISOLATED |
Not Qualified |
260 |
185 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
430 W |
150 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
210 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
430 W |
150 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
750 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
640 ns |
34 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X34 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
240 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
750 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
525 ns |
33 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X33 |
1 |
ISOLATED |
Not Qualified |
260 |
196 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
5 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
SILICON |
1200 V |
-40 Cel |
UNSPECIFIED |
R-XXMA-X5 |
ISOLATED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
430 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
6 |
438 ns |
35 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
230 ns |
IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
6 |
417 ns |
35 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
239 ns |
IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
660 ns |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
225 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
150 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
260 ns |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
UPPER |
S-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
155 ns |
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|
Infineon Technologies |
N-CHANNEL |
150 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
6.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Infineon Technologies |
N-CHANNEL |
150 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.