150 A Insulated Gate Bipolar Transistors (IGBT) 200

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG150J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	780 W	150 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	780 W	150 Cel	SILICON	600 V	300 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	150 ns
MG100Q1ZS50	Toshiba			NO	660 W	150 A	UNSPECIFIED			3.6 V	UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V			20 V				UPPER	R-XUFM-X5		Not Qualified
GT8G136	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	150 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		3500 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V			6 V			TIN LEAD	DUAL	R-PDSO-G8		Not Qualified			e0			3200 ns
MG150Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG150Q1JS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V							UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
MG150H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					700 ns
MG150J7KS60	Toshiba	N-CHANNEL	COMPLEX	NO		150 A	UNSPECIFIED	MOTOR CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	7			26	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X26	ISOLATED	Not Qualified
MG150J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V							UPPER	R-PUFM-X7		Not Qualified
MG100Q2YS51	Toshiba	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	POWER CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified						200 ns
MG150Q1JS44	Toshiba				1100 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V			20 V
MG150Q1BS11	Toshiba	N-CHANNEL	SINGLE			150 A							1								SILICON	1200 V										Not Qualified
MG150J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified						400 ns
MG100Q2YS51A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	660 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					50 ns
MG150Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG150N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	800 W	150 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					700 ns
MG150J1JS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	780 W	150 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	500 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	780 W	150 Cel	SILICON	600 V			20 V		8 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	500 ns
MG150Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	890 W	150 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified						100 ns
MG150Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-PUFM-X7		Not Qualified
MG100Q2YS50	Toshiba			NO	660 W	150 A	UNSPECIFIED			3.6 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V			20 V				UPPER	R-XUFM-X7		Not Qualified
MG150J1ZS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN CONFIGURABLE DIODE	NO	780 W	150 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	780 W	150 Cel	SILICON	600 V	300 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	150 ns
MG150Q1ZS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V							UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
MG150J7KS50	Toshiba	N-CHANNEL	COMPLEX	NO	320 W	150 A	PLASTIC/EPOXY	MOTOR CONTROL	300 ns	2.8 V	UNSPECIFIED	RECTANGULAR	7	500 ns		22	FLANGE MOUNT	Insulated Gate BIP Transistors	320 W	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	UPPER	R-PUFM-X22	ISOLATED	Not Qualified	HIGH SPEED		e0
MG150Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V							UPPER	R-PUFM-X7		Not Qualified
MBM150GS12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			150 A		POWER CONTROL					2								SILICON	1200 V									ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
RJP4009ANS	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	150 A	PLASTIC/EPOXY			9 V	FLAT	RECTANGULAR	1			8	SMALL OUTLINE			150 Cel	SILICON	400 V		-40 Cel	6 V		1.2 V		DUAL	R-PDSO-F8
RBN75H125S1FP4-A0#CB0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	517 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.34 V	THROUGH-HOLE	RECTANGULAR	1		244 ns	3	FLANGE MOUNT			175 Cel	SILICON	1250 V			30 V		7.1 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	58 ns
MBL150GS6N	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	600 V							SINGLE	R-PSFM-X7	ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					300 ns
MBM150F12	Renesas Electronics					150 A				3 V			1					Insulated Gate BIP Transistors				1200 V			20 V
RJP4009ANS-01#Q6	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	150 A	PLASTIC/EPOXY			9 V	FLAT	RECTANGULAR	1			8	SMALL OUTLINE			150 Cel	SILICON	400 V		-40 Cel	6 V		1.2 V		DUAL	R-PDSO-F8						NOT SPECIFIED	NOT SPECIFIED
RJP65S05DWT-80#X0	Renesas Electronics	N-CHANNEL				150 A												Insulated Gate BIP Transistors		150 Cel		650 V			30 V											NOT SPECIFIED	NOT SPECIFIED
MBM150BS6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			150 A		POWER CONTROL					2								SILICON	600 V									ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					400 ns
MBM150A6	Renesas Electronics					150 A				3 V			1					Insulated Gate BIP Transistors				600 V			20 V
RJP65S05DWA-80#W0	Renesas Electronics	N-CHANNEL				150 A												Insulated Gate BIP Transistors		150 Cel		650 V			30 V											NOT SPECIFIED	NOT SPECIFIED
RJP1CS05DWA-80#W0	Renesas Electronics	N-CHANNEL		YES		150 A											UNCASED CHIP	Insulated Gate BIP Transistors		150 Cel		1250 V			30 V		6.8 V									NOT SPECIFIED	NOT SPECIFIED
MBM150GR12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	1200 V							UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE					300 ns
MBL150GS6P	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	600 V							SINGLE	R-PSFM-X7	ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					300 ns
MBM150GS6AW	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	450 W	150 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE					300 ns
MBM150GR12	Renesas Electronics			NO	830 W	150 A	PLASTIC/EPOXY			2.8 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V			20 V				UPPER	R-PUFM-X7		Not Qualified
MBM150GR6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	520 W	150 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	2		550 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE					300 ns
RJP4007ANS-00-Q6	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		150 A	PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V			6 V		1.2 V		DUAL	R-PDSO-F8		Not Qualified
CY25BAH-8F-T13	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		150 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1			8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V			4 V		1.2 V		DUAL	R-PDSO-G8		Not Qualified
RBN75H65T1FPQ-A0#CB0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	312 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V			30 V		5.9 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	56 ns
MBM150GS12AW	Renesas Electronics				800 W	150 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V			20 V
RJP4009ANS-01-Q6	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	150 A	PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V			6 V		1.2 V		DUAL	R-PDSO-F8
MBM150GS6A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			150 A		POWER CONTROL					2								SILICON	600 V									ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					300 ns
RJP1CS05DWT-80#X0	Renesas Electronics	N-CHANNEL		YES		150 A												Insulated Gate BIP Transistors		150 Cel		1250 V			30 V		6.8 V									NOT SPECIFIED	NOT SPECIFIED
IXGQ150N60Y3	Littelfuse				600 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IXGQ150N100Y3	Littelfuse				600 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V			20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.