150 A Insulated Gate Bipolar Transistors (IGBT) 200

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC121T60NR2

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N

Not Qualified

INTEGRATED GATE RESISTOR

SIGC78T60R3X1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

9

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

S-XUUC-N9

SIGC223T120R2CSX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

660 ns

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N

225 ns

SIGC158T120R3LEX1SA2

Infineon Technologies

N-CHANNEL

YES

150 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC158T120R3X1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

830 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

S-XUUC-N

Not Qualified

e3

395 ns

SIGC158T120R3EX1SA4

Infineon Technologies

N-CHANNEL

YES

150 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC223T120R2CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC158T120R3LYX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X

SIGC76T60R3EX1SA3

Infineon Technologies

N-CHANNEL

150 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC121T60NR2CX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

260 ns

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

155 ns

SIGC158T120R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

830 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

UPPER

S-XUUC-N

Not Qualified

e0

395 ns

SIGC223T120R2CLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC186T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC223T120R2CSX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

660 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

225 ns

SIGC186T170R3X1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1700 V

MATTE TIN

UPPER

S-XUUC-N

Not Qualified

e3

SP000638568

Infineon Technologies

N-CHANNEL

COMPLEX

NO

335 W

150 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

480 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

155 ns

SP001272740

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

372 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

TO-247

86 ns

SIGC158T120R3L

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

UPPER

R-XUFM-X

Not Qualified

e0

SIGC158T120R3YX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

830 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N

395 ns

FF100R12KS4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

BSM150GAL100D

Infineon Technologies

1250 W

150 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

IRG7T150CH12B

Infineon Technologies

N-Channel

150 A

2.2 V

610 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

120000 ns

BSM150GB120D

Infineon Technologies

1200 W

150 A

2.8 V

1

Insulated Gate BIP Transistors

1000 V

BSM100GB120DN2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

470 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

IRG7T150CL12B

Infineon Technologies

N-Channel

150 A

2.2 V

610 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

120000 ns

BSM150GXL120DN2

Infineon Technologies

1050 W

150 A

3.7 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

FP150R12N3T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

7

434 ns

43

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X43

ISOLATED

UL RECOGNIZED

244 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IRG7T150HF12B

Infineon Technologies

N-Channel

150 A

2.2 V

610 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

120000 ns

FP150R12N3T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

434 ns

43

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X43

ISOLATED

UL RECOGNIZED

244 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

BSM100GAL120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 W

150 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

470 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

BSM150GXR120DN2

Infineon Technologies

1050 W

150 A

3.7 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

BSM100GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

6

470 ns

39

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-T39

ISOLATED

Not Qualified

240 ns

FF100R12KS4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

780 W

150 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

BSM100GAL120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

470 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

210 ns

BSM100GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

800 W

150 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

2

470 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

BSM100GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

680 W

150 A

UNSPECIFIED

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

6

470 ns

39

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-T39

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

240 ns

IRG7CH81K10EF-R

Infineon Technologies

N-CHANNEL

150 A

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

7.5 V

IKQ75N120CT2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

563 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

85 ns

BSM75GD170DL

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

150 A

UNSPECIFIED

3.3 V

UNSPECIFIED

RECTANGULAR

6

930 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

IRG7U150HF12B

Infineon Technologies

N-Channel

150 A

2 V

1085 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

4.9 V

ISOLATED

170000 ns

IKQ75N120CS6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

76 ns

BSM150GB100D

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

MG150J2YS11

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

150 A

2

SILICON

600 V

Not Qualified

MG150J2YS21

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

150 A

2

SILICON

600 V

Not Qualified

MG150J2YS2

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

150 A

2

SILICON

600 V

Not Qualified

MG100Q2YS50A

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

660 W

150 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

2

300 ns

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

660 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

50 ns

MG150Q2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

HIGH SPEED

MIG150J201H

Toshiba

N-CHANNEL

COMPLEX

NO

150 A

PLASTIC/EPOXY

MOTOR CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X24

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.