25 A Insulated Gate Bipolar Transistors (IGBT) 190

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MIG20J906HA

Toshiba

NO

90 W

25 A

UNSPECIFIED

2.7 V

PIN/PEG

RECTANGULAR

1

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

UPPER

R-XUFM-P24

Not Qualified

MG25Q2YS91

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

MG25J2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

25 A

2

SILICON

600 V

Not Qualified

MG25J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

125 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG25Q1BS1

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X3

Not Qualified

HIGH SPEED

MG25Q6ES11

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1200 V

Not Qualified

MG25N1JS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

5

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG25J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-D17

ISOLATED

Not Qualified

400 ns

MG15Q6ES50A

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

200 ns

MG25N6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1000 V

Not Qualified

MG25J2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

25 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

2

350 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-X7

Not Qualified

HIGH SPEED

MP6757

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

72 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

6

400 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

600 V

20 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

e0

600 ns

MG25Q2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

250 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

MG25N1ZS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

5

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG25N2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG15Q6ES51

Toshiba

NO

145 W

25 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

UPPER

R-XUFM-X17

Not Qualified

GT25J102

Toshiba

N-CHANNEL

SINGLE

NO

80 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

80 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

MIG25Q804H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MIG20J806EA

Toshiba

90 W

25 A

2.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

GT25H101

Toshiba

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

500 ns

MG25N2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT25G102(SM)

Toshiba

N-CHANNEL

SINGLE

YES

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

GULL WING

RECTANGULAR

1

6000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

MIG25Q904H

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

7

600 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MG25J6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 W

25 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

SOLDER LUG

RECTANGULAR

6

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

MIG15Q906H

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

GT25J101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

GT25G101

Toshiba

N-CHANNEL

SINGLE

NO

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

4500 ns

3

IN-LINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

25 V

7 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

150 ns

MIG25Q901H

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

RJH60D2DPP-E0#T2

Renesas Electronics

N-CHANNEL

NO

34 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60M2DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

45 ns

RJH60V2BDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

34 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60M2DPP-M0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27.2 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

45 ns

RJH60M2DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

45 ns

RJH60V2BDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

63 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60M2DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

33.8 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MUBW15-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

80 ns

IXGQ25N90Y4

Littelfuse

150 W

25 A

4.5 V

1

Insulated Gate BIP Transistors

150 Cel

900 V

20 V

IXGQ25N50Y4

Littelfuse

150 W

25 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

IXGQ25N100Y4

Littelfuse

125 W

25 A

4 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

IXGQ25N60Y4

Littelfuse

125 W

25 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

IXRP15N120

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

253 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

33.5 ns

IXBH15N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

2260 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

63 ns

IXRA15N120

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

253 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AA

e3

10

260

33.5 ns

MG1215H-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

MOTOR CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

IXBT15N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2260 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

PURE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-268AA

63 ns

SGI25N40

Samsung

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

13000 ns

3

IN-LINE

150 Cel

SILICON

400 V

SINGLE

R-PSIP-T3

Not Qualified

1000 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.