Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
340 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
Not Qualified |
TO-263AA |
NOT SPECIFIED |
NOT SPECIFIED |
31.5 ns |
|||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
95 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
NO |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
14500 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
385 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
4560 ns |
AEC-Q101 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
385 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
4560 ns |
AEC-Q101 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
300 W |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
90 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
95 ns |
490 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-218AB |
e0 |
125 ns |
|||||||||||||||||||||
|
Infineon Technologies |
100 W |
25 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
225 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
30 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
e0 |
250 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
160 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
1 |
ISOLATED |
Not Qualified |
260 |
210 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
e0 |
250 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
380 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
56 ns |
IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
470 ns |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
620 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
300 W |
25 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
e0 |
250 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
83.5 W |
25 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
1 |
145 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
110 W |
25 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
640 ns |
22 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
25 A |
Insulated Gate BIP Transistors |
175 Cel |
1200 V |
30 V |
6.5 V |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
e0 |
250 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
359 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
57 ns |
IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 W |
25 A |
UNSPECIFIED |
3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
470 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
|||||||||||||||||||||||
Infineon Technologies |
300 W |
25 A |
3.3 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
NO |
25 A |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
FAST |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
80 W |
25 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
192 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
68 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
PIN/PEG |
RECTANGULAR |
6 |
17 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-P17 |
Not Qualified |
||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
125 W |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
6.5 V |
SINGLE |
R-MSFM-P3 |
1 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
250 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
185 ns |
23 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
25 A |
METAL |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
6.5 V |
TIN LEAD |
SINGLE |
R-MSFM-P3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
TO-258AA |
e0 |
250 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
620 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
69 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
359 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
UL RECOGNIZED |
NOT SPECIFIED |
NOT SPECIFIED |
57 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
300 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.5 V |
SOLDER LUG |
RECTANGULAR |
6 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
20 V |
UPPER |
R-PUFM-D17 |
ISOLATED |
Not Qualified |
30 ns |
||||||||||||||||||||||||||
Infineon Technologies |
300 W |
25 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
78 W |
25 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
7 |
185 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||
Infineon Technologies |
78 W |
25 A |
2.55 V |
1 |
Insulated Gate BIP Transistors |
125 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
NO |
25 A |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
FAST |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
610 ns |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
UPPER |
R-XUUC-N |
Not Qualified |
e3 |
135 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
380 ns |
3 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N3 |
120 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
610 ns |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
135 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
380 ns |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
346 ns |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
63 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
380 ns |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
346 ns |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5.5 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
63 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN |
UPPER |
R-XUFM-X |
Not Qualified |
e3 |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
25 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.