25 A Insulated Gate Bipolar Transistors (IGBT) 190

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC32T120R3LEX1SA3

Infineon Technologies

N-CHANNEL

25 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC42T120CS2X1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC42T120CS2X1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N3

BSM15GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

145 W

25 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM15GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

100 ns

FP15R12KE3G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 W

25 A

UNSPECIFIED

2.2 V

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

BSM15GD120D2

Infineon Technologies

145 W

25 A

3.2 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

BSM15GD120DN2E3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

100 ns

FP15R12KT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 W

25 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FP15R12W1T3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 W

25 A

UNSPECIFIED

2.1 V

UNSPECIFIED

RECTANGULAR

7

590 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

80 ns

IRG7T25PM12E

Infineon Technologies

N-Channel

25 A

2.2 V

460 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

55000 ns

FS25R12W1T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

380 ns

15

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X15

ISOLATED

56 ns

IEC-61140

BSM15GD120DN2E3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

145 W

25 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

470 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IKA10N65ET6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32.5 W

25 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

195 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

45 ns

FS20R06VE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

71.5 W

25 A

UNSPECIFIED

2 V

WIRE

RECTANGULAR

6

250 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-W13

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

320 ns

FS25R12W1T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

.67 ns

22

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X22

ISOLATED

74 ns

IRGP430U-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-247AD

e0

40 ns

FS25R12W1T7P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

6

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

74 ns

FS20R06VE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

WIRE

RECTANGULAR

6

250 ns

13

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-W13

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

320 ns

FS20R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

250 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

FS20R06VE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

71.5 W

25 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

250 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

32 ns

F12-25R12KT4G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

25 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

12

470 ns

38

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X38

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

FP15R12NT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 W

25 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

650 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

MIG20J806E

Toshiba

90 W

25 A

2.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MG25J2YS91

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

MG25Q6ES42

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

POWER CONTROL

4 V

SOLDER LUG

RECTANGULAR

6

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

GT25G102

Toshiba

N-CHANNEL

SINGLE

NO

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

IN-LINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

20 V

5 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

MG15Q6ES50

Toshiba

NO

145 W

25 A

UNSPECIFIED

3.2 V

PIN/PEG

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

DUAL

R-XDFM-P17

Not Qualified

MIG15Q806HA

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MG25H2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

900 ns

7

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

500 ns

GT25G101(SM)

Toshiba

N-CHANNEL

SINGLE

YES

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

GULL WING

RECTANGULAR

1

6000 ns

4500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

25 V

7 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

150 ns

MG25Q6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1200 V

Not Qualified

MIG15Q906HA

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MG25H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

500 ns

GT25Q301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

300 ns

GT25Q102

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

300 ns

MIG15Q806H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MG25Q1BS11

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MIG20J806H

Toshiba

NO

90 W

25 A

UNSPECIFIED

2.7 V

PIN/PEG

RECTANGULAR

1

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

UPPER

R-XUFM-P24

Not Qualified

MG25Q6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1200 V

Not Qualified

MG25N2YS40

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

25 A

2

SILICON

1000 V

Not Qualified

MIG20J806HA

Toshiba

NO

90 W

25 A

UNSPECIFIED

2.7 V

PIN/PEG

RECTANGULAR

1

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

UPPER

R-XUFM-P24

Not Qualified

MG25J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 W

25 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

SOLDER LUG

RECTANGULAR

6

350 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-D17

Not Qualified

HIGH SPEED

MG25N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG15Q6ES51A

Toshiba

NO

145 W

25 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

UPPER

R-XUFM-X17

Not Qualified

MG25N6ES46

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

25 A

6

SILICON

1000 V

Not Qualified

MG25J2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

400 ns

GT25Q101

Toshiba

N-CHANNEL

SINGLE

NO

200 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

800 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

300 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.