Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
25 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
25 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N3 |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
145 W |
25 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
470 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
470 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
100 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 W |
25 A |
UNSPECIFIED |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
135 ns |
|||||||||||||||||||||||
Infineon Technologies |
145 W |
25 A |
3.2 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
470 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
100 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
105 W |
25 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
105 W |
25 A |
UNSPECIFIED |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
590 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-Channel |
25 A |
2.2 V |
460 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
55000 ns |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
380 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
56 ns |
IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
145 W |
25 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
470 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
32.5 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
195 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
45 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
71.5 W |
25 A |
UNSPECIFIED |
2 V |
WIRE |
RECTANGULAR |
6 |
250 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-W13 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
320 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
.67 ns |
22 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
74 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST |
TO-247AD |
e0 |
40 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
6 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
74 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
WIRE |
RECTANGULAR |
6 |
250 ns |
13 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-W13 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
320 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
250 ns |
15 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
71.5 W |
25 A |
UNSPECIFIED |
2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
250 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
160 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
12 |
470 ns |
38 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X38 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
105 W |
25 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
650 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
|||||||||||||||||||||||
Toshiba |
90 W |
25 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1000 ns |
7 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
SOLDER LUG |
RECTANGULAR |
6 |
500 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-PUFM-D17 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
25 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
6000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
75 W |
150 Cel |
SILICON |
400 V |
20 V |
5 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
NO |
145 W |
25 A |
UNSPECIFIED |
3.2 V |
PIN/PEG |
RECTANGULAR |
1 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
DUAL |
R-XDFM-P17 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
900 ns |
7 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
500 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
75 W |
25 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
4500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
75 W |
150 Cel |
SILICON |
400 V |
25 V |
7 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
150 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
25 A |
6 |
SILICON |
1200 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
900 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
500 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
680 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
680 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
1200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||
Toshiba |
NO |
90 W |
25 A |
UNSPECIFIED |
2.7 V |
PIN/PEG |
RECTANGULAR |
1 |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
UPPER |
R-XUFM-P24 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
25 A |
6 |
SILICON |
1200 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
25 A |
2 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
NO |
90 W |
25 A |
UNSPECIFIED |
2.7 V |
PIN/PEG |
RECTANGULAR |
1 |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
UPPER |
R-XUFM-P24 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
100 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
SOLDER LUG |
RECTANGULAR |
6 |
350 ns |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-PUFM-D17 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
NO |
145 W |
25 A |
UNSPECIFIED |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
17 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
1200 V |
20 V |
UPPER |
R-XUFM-X17 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
25 A |
6 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
500 ns |
7 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
200 W |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
800 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.