30 A Insulated Gate Bipolar Transistors (IGBT) 237

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

GN6030C

Renesas Electronics

N-CHANNEL

SINGLE

NO

150 W

30 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

400 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

Not Qualified

GN12030E

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

RJH60A85RDPE-00#J3

Renesas Electronics

N-CHANNEL

YES

113 W

30 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

2SH14

Renesas Electronics

N-CHANNEL

NO

100 W

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

CT30SM-12

Renesas Electronics

N-CHANNEL

SINGLE

NO

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

165 ns

RJP30H1DPD-00-J2

Renesas Electronics

N-CHANNEL

YES

40 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

RJH1CD5DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

55 ns

RJH1CM5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

58 ns

RJP30H1DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

20 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

2SH29

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

820 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

510 ns

RJH60D3DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJH30H1DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

100 ns

RJH60A85RDPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

39.7 W

30 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7.5 V

NOT SPECIFIED

NOT SPECIFIED

RJP30H1DPD-00#J2

Renesas Electronics

N-CHANNEL

YES

40 W

30 A

Insulated Gate BIP Transistors

150 Cel

360 V

30 V

5 V

GN4530C

Renesas Electronics

N-CHANNEL

NO

150 W

30 A

1000 ns

800 ns

Insulated Gate BIP Transistors

150 Cel

450 V

20 V

MUBW30-12A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

570 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

180 ns

UL RECOGNIZED

MWI15-12A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

140 W

30 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

6

570 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e3

175 ns

UL RECOGNIZED

MUBW15-12T7

Littelfuse

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

FAST SWITCHING, LOW SATURATION VOLTAGE

e3

140 ns

IXGP15N120B2

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

FII30-12D

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

2

570 ns

5

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

175 ns

IXGA15N100C

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXGF25N250

Littelfuse

N-CHANNEL

SINGLE

NO

114 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

409 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

301 ns

UL RECOGNIZED

IXGP15N100C

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

IXBH28N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

IXGA20N250HV

Littelfuse

N-CHANNEL

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

VII25-12P1

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

130 W

30 A

UNSPECIFIED

MOTOR CONTROL

3.3 V

UNSPECIFIED

RECTANGULAR

2

570 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

175 ns

FII30-06D

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

100 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

2

330 ns

5

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER COPPER

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

NOT SPECIFIED

NOT SPECIFIED

105 ns

IXGP50N33TBM-A

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

344 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

45 ns

IXYP10N65C3

Littelfuse

N-CHANNEL

SINGLE

NO

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

46 ns

IXGA15N100B

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

IXGA15N120C

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

470 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

e0

43 ns

VID25-12P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

130 W

30 A

UNSPECIFIED

MOTOR CONTROL

3.3 V

UNSPECIFIED

RECTANGULAR

1

570 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

175 ns

IXYP10N65C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

128 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

44 ns

IXGP15N100B

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IXGA15N120B2

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

565 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXGP15N120C

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

470 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

43 ns

IXGT15N120C

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

470 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-268AA

e0

43 ns

IXGT15N120B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

192 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

GULL WING

RECTANGULAR

1

255 ns

302 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

495 ns

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-268AA

e3

10

260

40 ns

IXGH15N120B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

255 ns

302 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

495 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

40 ns

IXGT15N100C

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

PURE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

43 ns

IXGT15N120CD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

520 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e0

43 ns

IXGH15N100C

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

43 ns

IXGH15N120C

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

470 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW SWITCHING LOSSES

TO-247AD

e0

43 ns

IXBT28N170A

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

IXGH15N120CD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

520 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e0

43 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.