Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
160 W |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
1200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
53 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
291 ns |
3 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G3 |
COLLECTOR |
HIGH SWITCHING SPEED |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
217 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
49 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
115 W |
30 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
6 V |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
30 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
460 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
180 W |
30 A |
UNSPECIFIED |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
7 |
460 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
130 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
291 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
e3 |
32 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
85 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
235 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
626 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.4 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
61 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
291 ns |
3 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G3 |
1 |
COLLECTOR |
Not Qualified |
HIGH SWITCHING SPEED |
TO-263AB |
e3 |
32 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
130 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
291 ns |
3 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
SINGLE |
R-PSSO-G3 |
1 |
COLLECTOR |
Not Qualified |
HIGH SWITCHING SPEED |
TO-263AB |
245 |
32 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
145 W |
30 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
540 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
3.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
330 ns |
730 ns |
3 |
FLANGE MOUNT |
160 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
82 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
357 W |
30 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
685 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.4 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
92 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
85 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
113 W |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
217 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
49 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
115 W |
30 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
30 V |
6 V |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
373 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
46 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
460 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
357 W |
30 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
432 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
6.4 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
48 W |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
30 |
260 |
46 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
125 W |
30 A |
2.8 V |
6 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
NO |
30 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
300 ns |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
400 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
500 W |
30 A |
UNSPECIFIED |
MOTOR CONTROL |
4.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1500 ns |
400 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
500 W |
150 Cel |
SILICON |
1700 V |
20 V |
8 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.45 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
240 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
155 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
155 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
400 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
240 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.45 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
240 ns |
||||||||||||||||||||||||||
Toshiba |
30 A |
4 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
120 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
700 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
500 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
100 W |
30 A |
UNSPECIFIED |
MOTOR CONTROL |
2.7 V |
SOLDER LUG |
RECTANGULAR |
6 |
360 ns |
550 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
100 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
UPPER |
R-XUFM-D21 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
500 ns |
|||||||||||||||||||
Toshiba |
125 W |
30 A |
2.8 V |
3 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
155 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
37 W |
30 A |
PLASTIC/EPOXY |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
510 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T7 |
Not Qualified |
590 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
30 A |
6 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
240 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
360 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
100 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
NO |
20 W |
30 A |
Insulated Gate BIP Transistors |
150 Cel |
360 V |
30 V |
5 V |
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|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
160 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.