30 A Insulated Gate Bipolar Transistors (IGBT) 237

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IHW15N120E1XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1450 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IKW15N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

49 ns

IHW20N120R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

685 ns

3

FLANGE MOUNT

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

e3

92 ns

IGW15N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

49 ns

IKD15N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

26 ns

IKW15T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

85 ns

IKW15N120T2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

626 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

61 ns

NGTB15N120FLWG

Onsemi

N-CHANNEL

NO

156 W

30 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

TIN

e3

STGP15H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

34 ns

SGB15N120

Infineon Technologies

N-CHANNEL

SINGLE

YES

198 W

30 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

26 ns

683 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

68 ns

NGTG15N60S1EG

Onsemi

N-CHANNEL

SINGLE

NO

117 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

93 ns

IGW15T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

85 ns

NGTB15N120FL2WG

Onsemi

N-CHANNEL

NO

294 W

30 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.5 V

MATTE TIN

e3

IKW15N120H3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG4PH40KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

730 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

82 ns

IXGT30N120B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

GULL WING

RECTANGULAR

1

380 ns

331 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

53 ns

NGTB15N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

229 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

435 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

91 ns

IHW15N120R3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STGF15H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

34 ns

IGP15N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e3

32 ns

IKB15N65EH5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

180 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

34 ns

7MBR30SA060

Fuji Electric

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

400 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

450 ns

IKD15N60RFATMA1

Infineon Technologies

N-CHANNEL

YES

250 W

30 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

5.7 V

TIN

1

e3

AOTF15B65M2

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

108 ns

3

FLANGE MOUNT

150 Cel

SILICON

650 V

-55 Cel

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

33 ns

IXGH30N120B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

331 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

53 ns

SGP15N120XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

683 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

68 ns

STGP15M120F3

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

406 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

SGP15N120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

683 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

68 ns

IKD15N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

193 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

30 ns

AEC-Q101

IKD15N60RFXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

193 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

30 ns

STGB18N40LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

30 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

16 V

2.3 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-263AB

e3

4450 ns

FGH15T120SMD_F155

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

534 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

25 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

74 ns

FGH15T120SMD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

534 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

25 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

74 ns

IKW15N120BH6XKSA1

Infineon Technologies

N-Channel

200 W

30 A

2.3 V

373 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

e3

46 ns

SK25GD063

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

30 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

225 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

e2

90 ns

UL RECOGNIZED

FGA15N120ANTDTU-F109

Onsemi

N-CHANNEL

NO

186 W

30 A

180 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

8.5 V

FGPF15N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

12.8 ns

69.8 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

18.8 ns

IXBH12N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

204 ns

IXBT12N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

1

720 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

204 ns

IXGF30N400

Littelfuse

N-CHANNEL

SINGLE

NO

160 W

30 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

724 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

4000 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

201 ns

UL RECOGNIZED

RGS30TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

267 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

AEC-Q101

RGS30TSX2DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

IKP15N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e3

32 ns

FGPF4565

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

30 A

PLASTIC/EPOXY

POWER CONTROL

1.88 V

THROUGH-HOLE

RECTANGULAR

1

242.8 ns

3

FLANGE MOUNT

150 Cel

SILICON

650 V

-55 Cel

25 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

72 ns

NGTB15N60S1EG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

117 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

93 ns

NGTB15N60EG

Onsemi

N-CHANNEL

NO

117 W

30 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

TIN

e3

NGTB15N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NGTB15N120IHWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.