35 A Insulated Gate Bipolar Transistors (IGBT) 120

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGMC50FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IRGMC40FD

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IRGMC40FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IRGMC50UU

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

IRGMC50UD

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

FS35R12KE3

Infineon Technologies

200 W

35 A

2.2 V

1

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

BUP307D

Infineon Technologies

N-CHANNEL

SINGLE

NO

300 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

35 ns

THROUGH-HOLE

RECTANGULAR

1

28 ns

250 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-218AB

e0

52 ns

BSM25GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

SIGC41T120R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

35 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

SIGC41T120R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

35 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

UPPER

R-XUUC-N

Not Qualified

e0

135 ns

SIGC41T120R3LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

35 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

3

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUUC-N3

Not Qualified

e3

140 ns

SP000223651

Infineon Technologies

N-Channel

135 W

35 A

2 V

320 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

ISOLATED

57 ns

SIGC41T120R3L

Infineon Technologies

N-CHANNEL

SINGLE

YES

35 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FP35R12KT4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

35 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FS20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

18

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL APPROVED

FP35R12N2T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

370 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

UL RECOGNIZED

88 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FP35R12N2T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

370 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

UL RECOGNIZED

88 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

IRG4MC50UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

BSM15GD120DLCE3224

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

145 W

35 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

6

390 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

130 ns

IRG4MC50USCX

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

BSM15GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

180 W

35 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

7

465 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

121 ns

FP35R12KT4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

35 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FS20R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

135 W

35 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

320 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL RECOGNIZED

IRG4MC50FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

FS20R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

135 W

35 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

320 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

BSM15GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

465 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

121 ns

IRG4MC50F

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

POWER CONTROL

25 ns

PIN/PEG

SQUARE

1

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

FP35R12W2T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

400 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

72 ns

IEC-61140

BSM15GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

35 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

390 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

130 ns

FS20R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

15

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

IRG4MC40U

Infineon Technologies

N-CHANNEL

SINGLE

NO

114 W

35 A

UNSPECIFIED

POWER CONTROL

42 ns

PIN/PEG

SQUARE

1

120 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRG4MC50U

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRG4MC50USCS

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

POWER CONTROL

75 ns

2.75 V

PIN/PEG

SQUARE

1

150 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

150 ns

-55 Cel

20 V

350 ns

6 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

IRG4MC50FSCX

Infineon Technologies

N-Channel

35 A

2 V

875 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

6 V

25000 ns

IRG4MC50FSCV

Infineon Technologies

N-Channel

35 A

2 V

875 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

6 V

25000 ns

IRG4MC50USCV

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

MIG30J906E

Toshiba

125 W

35 A

2.8 V

3

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MIG25Q906HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG30J906HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

MG25Q6ES51

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MIG25Q906H

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG30J806HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

250 ns

MIG30J806H

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

250 ns

MG25Q6ES50A

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

6

300 ns

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

HIGH SPEED

150 ns

MIG25Q806H

Toshiba

NO

200 W

35 A

PLASTIC/EPOXY

3.2 V

PIN/PEG

RECTANGULAR

3

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-P24

Not Qualified

MIG30J906EA

Toshiba

125 W

35 A

2.8 V

3

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

MG25Q6ES51A

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

200 W

35 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MG25Q6ES50

Toshiba

NO

200 W

35 A

UNSPECIFIED

3.2 V

PIN/PEG

RECTANGULAR

1

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

DUAL

R-XDFM-P17

Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.