75 A Insulated Gate Bipolar Transistors (IGBT) 325

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGQ75N90Y4	Littelfuse				300 W	75 A			4.5 V			1					Insulated Gate BIP Transistors	150 Cel		900 V		20 V
MUBW50-06A7	Littelfuse	N-CHANNEL	COMPLEX	NO		75 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	7		330 ns	24	FLANGE MOUNT			SILICON	600 V					MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24		ISOLATED	Not Qualified	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			110 ns
IXGR60N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		198 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	62 ns
IXGR72N60A3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.45 V	THROUGH-HOLE	RECTANGULAR	1		885 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED		LOW CONDUCTION LOSS		e1	10	260	63 ns
IXGQ75N50Y4	Littelfuse				300 W	75 A			3.5 V			1					Insulated Gate BIP Transistors	150 Cel		500 V		20 V
IXGR60N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		198 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	54 ns
IXGR72N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	160 ns	370 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e1	10	260	63 ns
IXGQ75N100Y4	Littelfuse				350 W	75 A			4 V			1					Insulated Gate BIP Transistors	150 Cel		1000 V		20 V
IXGR45N120	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1			3	IN-LINE			SILICON						TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1	10	260
IXGE75N50Z	Littelfuse				250 W	75 A			3.2 V			1					Insulated Gate BIP Transistors			500 V
IXGK72N60A3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	THROUGH-HOLE	RECTANGULAR	1		885 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	63 ns
IXGN49N60BD3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	1		450 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V					NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified						110 ns	UL RECOGNIZED
MG1250H-XN2MM	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		75 A	UNSPECIFIED	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	6		610 ns	28	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X28		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	140 ns	UL RECOGNIZED
IXGB200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	1250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL	1.5 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	493 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	750 ns	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR							127 ns
IXGX40N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		1030 ns	3	IN-LINE		150 Cel	SILICON	1200 V					TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			105 ns
IXGI48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				45 ns
IXD75IF650NA	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	UNSPECIFIED	RECTANGULAR	1		160 ns	4	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	70 ns	IEC-60747; UL RECOGNIZED
IXGE75N60Z	Littelfuse				250 W	75 A			3.2 V			1					Insulated Gate BIP Transistors			600 V
IXGK50N60A2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		890 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-264AA	e1	10	260	45 ns
IXGX72N60C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	132 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	240 ns	5.5 V		SINGLE	R-PSIP-T3		COLLECTOR							64 ns
IXGK75N60B	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT			SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSFM-T3			Not Qualified		TO-264AA	e1	10	260
IXBH45N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		2460 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AD	e3	10	260	83 ns
IXGX72N60A3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	THROUGH-HOLE	RECTANGULAR	1		885 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					63 ns
IXGA28N60A3	Littelfuse	N-CHANNEL	SINGLE	YES	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.4 V	GULL WING	RECTANGULAR	1		870 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	46 ns
IXGA48N60C3-TRL	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		187 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	45 ns
IXGV32N170	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		920 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V						SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	90 ns
IXGP48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXGX50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	IN-LINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR							48 ns
MG1250W-XBN2MM	Littelfuse	N-CHANNEL	COMPLEX	NO		75 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	7		610 ns	24	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X24		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	140 ns
IXGX50N60A2U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		1230 ns	3	IN-LINE		150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			45 ns
IXBN75N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		595 ns	4	FLANGE MOUNT		150 Cel	SILICON	1700 V					NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified						65 ns	UL RECOGNIZED
IXGK50N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA	e1	10	260	48 ns
IXGJ50N60B	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	270 ns	450 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e3			100 ns
IXGP28N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.4 V	THROUGH-HOLE	RECTANGULAR	1		870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				46 ns
MG1750S-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	UNSPECIFIED	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	2		1100 ns	7	FLANGE MOUNT		125 Cel	SILICON	1700 V	-40 Cel					UPPER	R-XUFM-X7		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	450 ns	UL RECOGNIZED
IXGE75N100Z	Littelfuse				250 W	75 A			3.7 V			1					Insulated Gate BIP Transistors			1000 V
IXGK50N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-264AA	e1	10	260	43 ns
IXGA48N60C3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		187 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	45 ns
IXGE75N80Z	Littelfuse				250 W	75 A			3.7 V			1					Insulated Gate BIP Transistors			800 V
IXGX50N60A2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		890 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e1			45 ns
IXGE75N90Z	Littelfuse				250 W	75 A			3.7 V			1					Insulated Gate BIP Transistors			900 V
IXGX50N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		230 ns	3	IN-LINE		150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			43 ns
IXGH120N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		195 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	65 ns
IXGH40N120A2	Littelfuse	N-CHANNEL	SINGLE	NO	360 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	1200 ns	1220 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	2000 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	63 ns
IXGH40N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		1180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	48 ns
IXGT32N120A3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	GULL WING	RECTANGULAR	1		1380 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	239 ns
IXGT72N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	GULL WING	RECTANGULAR	1	160 ns	240 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	490 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	64 ns
IXGT40N60C	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		155 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.