75 A Insulated Gate Bipolar Transistors (IGBT) 325

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC39T60SX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

401 ns

3

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N3

Not Qualified

e3

69 ns

SIGC39T60X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N3

SIGC84T120R3LEX1SA1

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

SIGC121T120R2CSYX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N

INTEGRATED GATE RESISTOR

SIGC121T120R2CSX1SA6

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

SILICON

1200 V

UPPER

S-XUUC-N

INTEGRATED GATE RESISTOR

SIGC61T60NCX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

205 ns

4

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N4

90 ns

FP50R07U1E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

274 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

BSM75GAR120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IKW40T120XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

92 ns

IRGP50B60PD1-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

75 A

PLASTIC/EPOXY

POWER CONTROL

20 ns

THROUGH-HOLE

RECTANGULAR

1

20 ns

161 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH RELIABILITY

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

39 ns

IGW40T120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

92 ns

FS75R06KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

75 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

6

320 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRGB30B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

370 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

THROUGH-HOLE

RECTANGULAR

1

42 ns

237 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

74 ns

FP50R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

FS75R12N2T7_B15

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

75 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

6

420 ns

28

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X28

ISOLATED

212 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

FS50R07U1E4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

230 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

274 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

FS75R07N2E4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

320 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

FS50R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

IKW40T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

92 ns

FS75R12KT4B15BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

6.4 V

UPPER

R-XUFM-X28

ISOLATED

185 ns

UL APPROVED

FS75R06KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

320 ns

28

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

45 ns

F4-75R07W1H3_B11A

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

75 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

4

213 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL APPROVED

BSM75GB120D

Infineon Technologies

625 W

75 A

2.8 V

1

Insulated Gate BIP Transistors

1200 V

IRG7U75HF12A

Infineon Technologies

N-Channel

75 A

2 V

1075 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

4.9 V

ISOLATED

130000 ns

AUIRG7CH73K10B

Infineon Technologies

N-CHANNEL

75 A

138 ns

134 ns

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

7.5 V

IRG4PC60UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

520 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

78 ns

F475R07W2H3B51BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

1.55 V

UNSPECIFIED

RECTANGULAR

4

300 ns

18

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

FS75R12KT4_B15

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS50R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

230 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

6

274 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

IRG7T75FF12F

Infineon Technologies

N-Channel

75 A

2.2 V

520 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

110000 ns

BSM75GAL100D

Infineon Technologies

625 W

75 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

BSM75GAR120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FP50R12KT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

F4-75R07W2H3_B51

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

1.55 V

UNSPECIFIED

RECTANGULAR

4

300 ns

18

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

IRGP50B60PD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

161 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

F475R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

75 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

4

213 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL APPROVED

IRGP50B60PD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

59 ns

FP50R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

FP50R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

270 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

IRG7CH73UEF-R

Infineon Technologies

N-CHANNEL

75 A

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

6 V

FS50R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

BSM75GB100D

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

30 ns

IRG7T75HF12A

Infineon Technologies

N-Channel

75 A

2.2 V

520 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

110000 ns

IRGB30B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

237 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

74 ns

FS75R12KT4_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

IGW40T120

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

92 ns

AUIRG7CH73K6B

Infineon Technologies

N-CHANNEL

75 A

135 ns

70 ns

Insulated Gate BIP Transistors

175 Cel

1200 V

30 V

7.5 V

IRG4PC60U

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.