75 A Insulated Gate Bipolar Transistors (IGBT) 325

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

F475R07W2H3B51BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

300 ns

28

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X28

ISOLATED

45 ns

UL APPROVED

MG75Q2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

HIGH SPEED

MG75H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

700 ns

MG75J2YS45

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

MG75J6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

75 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

6

300 ns

500 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

390 W

150 Cel

SILICON

600 V

20 V

8 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG75J2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

2

SILICON

600 V

Not Qualified

MG75J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

200 W

75 A

UNSPECIFIED

MOTOR CONTROL

800 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MIG50J806H

Toshiba

N-CHANNEL

COMPLEX

NO

200 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.8 V

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

300 ns

MG75J6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

6

350 ns

19

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X19

Not Qualified

HIGH SPEED

MG75J1ZS50

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

390 W

75 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

300 ns

200 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

390 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

MG75J2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

75 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

2

300 ns

200 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

390 W

150 Cel

SILICON

600 V

160 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

80 ns

MG75Q2YS11

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

600 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

MG75Q2YS42

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

560 W

75 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

2

500 ns

800 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

560 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG75N1AS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG75H2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

5 V

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

700 ns

MG75N2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

5 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

500 ns

MG75J6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

500 ns

19

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG75J2YS91

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

2

SILICON

600 V

Not Qualified

MG75J1SB11

Toshiba

N-CHANNEL

SINGLE

75 A

1

SILICON

600 V

Not Qualified

MG75J1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X5

Not Qualified

CHOPPER SWITCH

NOT SPECIFIED

NOT SPECIFIED

MG75J2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG75N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

500 ns

MG75Q1JS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

75 A

UNSPECIFIED

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

560 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

2SH31

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1100 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

1000 ns

GN6075E

Renesas Electronics

N-CHANNEL

NO

250 W

75 A

1000 ns

400 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

RJH60M5DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

MBB75GS12AW

Renesas Electronics

450 W

75 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

MBM75AS6

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJH60D5DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

CT75AM-12

Renesas Electronics

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

305 ns

RJH60D5DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

2SH16-E

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1600 ns

3

FLANGE MOUNT

SILICON

600 V

TIN COPPER

SINGLE

R-PSFM-T3

1

Not Qualified

e2

RJH60D5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

MBB75A6

Renesas Electronics

75 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

MBM75GS12A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

2

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

2SH22

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

MBM75GS12AW

Renesas Electronics

450 W

75 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJH60D5DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJH60M5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBB75GS12A

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

6

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

RJH60D5BDPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

MBM75A6

Renesas Electronics

75 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

MBB75AS6

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

6

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

2SH16

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

1600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

e0

MBM75F12

Renesas Electronics

75 A

3 V

1

Insulated Gate BIP Transistors

1200 V

20 V

IXGQ35N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

780 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

105 ns

IXGR72N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

132 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

240 ns

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

64 ns

MUBW50-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

330 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.