75 A Insulated Gate Bipolar Transistors (IGBT) 325

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGH48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXGH50N50B	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	50 ns
IXGH40N120C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		4.4 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	475 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	52 ns
IXGH50N90B2	Littelfuse	N-CHANNEL	SINGLE	NO	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		820 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	48 ns
IXGT40N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1		770 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	79 ns
IXGH40N50A	Littelfuse	N-CHANNEL		NO	250 W	75 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGT25N160	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		526 ns	2	SMALL OUTLINE		150 Cel	SILICON	1600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	283 ns
IXGH50N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	75 A	PLASTIC/EPOXY	POWER CONTROL		4.2 V	THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	55 ns
IXGH60N50A	Littelfuse	N-CHANNEL		NO	310 W	75 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH40N50	Littelfuse	N-CHANNEL		NO	250 W	75 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGT50N60C2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		230 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	43 ns
IXGH48N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	47 ns
IXGT60N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		198 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	54 ns
IXGH120N30B3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		164 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	10	260	49 ns
IXGT40N120A2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		2300 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	55 ns
IXGH40N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	380 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		4.4 V	THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	52 ns
IXGH72N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	240 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	490 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	64 ns
IXGH48N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	48 ns
IXGH72N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	132 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	240 ns	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	64 ns
IXGT40N60B	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		570 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	60 ns
IXGH50N50BS	Littelfuse	N-CHANNEL		YES	250 W	75 A								150 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V
IXGH60N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		221 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	50 ns
IXGT40N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		1180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA				48 ns
MIXA50PM650TMI	Littelfuse				188 W	75 A				1.8 V			1					Insulated Gate BIP Transistors	175 Cel		650 V		20 V
IXGH85N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	333 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	59 ns
IXGT50N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	400 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		550 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	48 ns
IXGH60N50	Littelfuse	N-CHANNEL		NO	310 W	75 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH32N100A3	Littelfuse	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		1170 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	75 ns	UL RECOGNIZED
IXGT45N120	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	700 ns	1400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	96 ns
IXGT50N50B	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE		150 Cel	SILICON	500 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	FAST	TO-268AA				50 ns
IXGH60N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	380 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		198 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	54 ns
IXGT32N100A3	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			GULL WING	RECTANGULAR	1		1170 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	75 ns	UL RECOGNIZED
IXBT45N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		2460 ns	2	SMALL OUTLINE			SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				83 ns
IXGH28N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1		870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD				46 ns
IXGT32N170	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		920 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	90 ns
IXGH39N60CD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT			SILICON						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3	10	260
IXGH45N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	700 ns	1400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	96 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.